公开(公告)号：EP0521634B1

公开(公告)日：1996-04-24

申请号：EP92305554.5

申请日：1992-06-17

申请人： Hewlett-Packard Company

发明人： Fasen, Duane A. ,  Beckmann, Jerome E. ,  Stanback, John H. ,  Hess, Ulrich E. ,  Metz, Larry S. ,  Moore, Charles E. ,  Hulings, James R.

IPC分类号： B41J2/16 ,  B41J2/34

CPC分类号： B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/03 ,  B41J2202/13 ,  Y10T29/49401

公开(公告)号：EP0521634A3

公开(公告)日：1993-05-12

申请号：EP92305554.5

申请日：1992-06-17

申请人： Hewlett-Packard Company

发明人： Fasen, Duane A. ,  Beckmann, Jerome E. ,  Stanback, John H. ,  Hess, Ulrich E. ,  Metz, Larry S. ,  Moore, Charles E. ,  Hulings, James R.

IPC分类号： B41J2/16 ,  B41J2/34

CPC分类号： B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/03 ,  B41J2202/13 ,  Y10T29/49401

摘要： An improved thermal inkjet printhead having MOSFET drive transistors (126) incorporated therein. The gate (110) of each MOSFET transistor (126) is formed by applying a layer (72) of silicon dioxide onto a silicon substrate (70), applying a layer (76) of silicon nitride onto the silicon dioxide, and applying a layer (90) of polycrystalline silicon onto the silicon nitride. Portions of the substrate (70) surrounding the gate (110) are oxidized, forming field oxide regions (84, 86). Source and drain regions (118, 120) are then conventionally formed, followed by the application of a protective dielectric layer (124) onto the field oxide (84, 86), source (118), drain (120), and gate (110). A resistive layer (180) is deposited on the dielectric layer (124) and directly connected to the source (118), drain (120), and gate (110). A conductive layer (181) is deposited on a portion of the resistive layer (180), ultimately forming both uncovered and covered regions (202, 204, 206) thereof. The uncovered region (202) functions as a heating resistor (209), and the covered regions (204, 206) function as electrical contacts to the transistor (126) and resistor (209).

公开(公告)号：EP0521634A2

公开(公告)日：1993-01-07

申请号：EP92305554.5

申请日：1992-06-17

申请人： Hewlett-Packard Company

发明人： Fasen, Duane A. ,  Beckmann, Jerome E. ,  Stanback, John H. ,  Hess, Ulrich E. ,  Metz, Larry S. ,  Moore, Charles E. ,  Hulings, James R.

IPC分类号： B41J2/16 ,  B41J2/34

CPC分类号： B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/03 ,  B41J2202/13 ,  Y10T29/49401

摘要： An improved thermal inkjet printhead having MOSFET drive transistors (126) incorporated therein. The gate (110) of each MOSFET transistor (126) is formed by applying a layer (72) of silicon dioxide onto a silicon substrate (70), applying a layer (76) of silicon nitride onto the silicon dioxide, and applying a layer (90) of polycrystalline silicon onto the silicon nitride. Portions of the substrate (70) surrounding the gate (110) are oxidized, forming field oxide regions (84, 86). Source and drain regions (118, 120) are then conventionally formed, followed by the application of a protective dielectric layer (124) onto the field oxide (84, 86), source (118), drain (120), and gate (110). A resistive layer (180) is deposited on the dielectric layer (124) and directly connected to the source (118), drain (120), and gate (110). A conductive layer (181) is deposited on a portion of the resistive layer (180), ultimately forming both uncovered and covered regions (202, 204, 206) thereof. The uncovered region (202) functions as a heating resistor (209), and the covered regions (204, 206) function as electrical contacts to the transistor (126) and resistor (209).

摘要翻译： 一种改进的热喷墨打印头，其具有并入其中的MOSFET驱动晶体管（126）。 每个MOSFET晶体管（126）的栅极（110）通过将二氧化硅层（72）施加到硅衬底（70）上，将氮化硅层（76）施加到二氧化硅上，并施加层 （90）的多晶硅到氮化硅上。 围绕栅极（110）的衬底（70）的部分被氧化，形成场氧化物区域（84,86）。 然后通常形成源区和漏区（118,120），随后在场氧化物（84,86），源极（118），漏极（120）和栅极（110）上施加保护电介质层（124） ）。 电阻层（180）沉积在电介质层（124）上并直接连接到源极（118），漏极（120）和栅极（110）。 导电层（181）沉积在电阻层（180）的一部分上，最终形成其未覆盖区域和覆盖区域（202,204,206）。 未覆盖区域（202）用作加热电阻器（209），并且覆盖区域（204,206）用作与晶体管（126）和电阻器（209）的电接触。