公开(公告)号：EP2187445A1

公开(公告)日：2010-05-19

申请号：EP08169054.7

申请日：2008-11-13

申请人： Hitachi, Ltd.

发明人： Andreev, Aleksey ,  Ando, Masahiko ,  Williams, David

IPC分类号： H01L31/0352 ,  H01L51/42 ,  H01L31/18

CPC分类号： H01L31/03529 ,  B82Y30/00 ,  H01L31/04 ,  H01L31/101 ,  H01L33/18 ,  H01L51/426 ,  Y02E10/50

摘要： A material comprises an array of nanoparticles comprising a first semiconducting material and nanoparticles comprising a second, different semiconducting material. The nanoparticles form a heterostructure. The nanoparticles have dimensions and the materials yield band offsets such that the material exhibits a localised state which is higher in energy than a delocalised state.

摘要翻译： 材料包括包含第一半导体材料的纳米颗粒阵列和包含第二不同半导体材料的纳米颗粒。 纳米颗粒形成异质结构。 纳米颗粒具有尺寸，并且材料产生带偏移，使得材料表现出比离域状态更高的能量的局部状态。

公开(公告)号：EP1850404A2

公开(公告)日：2007-10-31

申请号：EP07007441.4

申请日：2007-04-11

申请人： Hitachi, Ltd.

发明人： Fujimori, Masaaki ,  Hashizume, Tomihiro ,  Ando, Masahiko

IPC分类号： H01L51/10

CPC分类号： H01L51/0012 ,  H01L51/0003 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/102

摘要： A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.

摘要翻译： 一种场效应晶体管的制造方法，其中，在基板上设置图案化栅极电极，并且在基板上设置栅极绝缘体，栅电极，源电极和漏极彼此间隔开 栅极绝缘体，设置作为源电极和漏极之间的沟道的区域，该区域与源电极和漏电极中的任一个之间的边界是线性的，该区域和漏极中的任一个之间的边界 电极和源电极是非线性的，边界具有连续或不连续的形状，并且边界部分具有多个凹部，该区域的表面具有亲水性，并且该区域的周边区域准备具有水 - 将排斥性和包含半导体有机分子的溶液供给到该区域，并将溶液干燥。

公开(公告)号：EP2063471A1

公开(公告)日：2009-05-27

申请号：EP07121569.3

申请日：2007-11-26

申请人： Hitachi Ltd.

发明人： Nakako, Hideo ,  Yamamoto, Kazunori ,  Kumashiro, Yasushi ,  Ando, Masahiko ,  Shiba, Takeo c/o Hitachi, Ltd

IPC分类号： H01L51/05

CPC分类号： H01L51/052 ,  H01L51/0043 ,  H01L51/0545

摘要： An organic field-effect transistor has a gate insulating layer (4) comprising a cured epoxy resin. The epoxy resin has a lower concentration of trapping centres (8) compared with a conventional epoxy resin in which trapping centres are provided by hydroxyl (OH) groups. The lower concentration of trapping centres can be achieved by reducing the number of hydroxyl groups throughout the layer and/or by reducing the number of hydroxyl groups in a surface region (9).

摘要翻译： 有机场效应晶体管具有包含固化的环氧树脂的栅绝缘层（4）。 与通过羟基（OH）基团提供捕集中心的常规环氧树脂相比，环氧树脂具有较低的捕获中心浓度（8）。 通过减少整个层中的羟基数量和/或通过减少表面区域中的羟基数量可以实现较低浓度的捕获中心（9）。

公开(公告)号：EP1933196A2

公开(公告)日：2008-06-18

申请号：EP07023900.9

申请日：2007-12-10

申请人： Hitachi, Ltd.

发明人： Shiba, Takeo ,  Ando, Masahiko ,  Kawasaki, Masahiro ,  Fujimori, Masaaki

IPC分类号： G02F1/167 ,  G09G3/34

CPC分类号： H01L27/286 ,  G02F1/13454 ,  G09G3/3225 ,  G09G2300/0426 ,  G09G2380/02 ,  H01L27/283 ,  H01L27/3274 ,  H01L27/3276 ,  H01L51/0545 ,  H01L2251/5338

摘要： In an image display device comprising a display part configured with a plurality of pixels (6) and a peripheral integrated circuit (4a, 4b) which controls the display part, the display device is provided on a support substrate (7) which has high durability for the impact and the bending, the pixel circuit (6) is configured with an organic semiconductor TFT, the peripheral integrated circuit (4a, 4b) is configured with a low-temperature poly Si-TFT, this peripheral integrated circuit (4a, 4b) is provided on a support substrate (7) of the display device being removed the support substrate when being manufactured, and the pixel circuit (6) and the peripheral integrated circuit (4a, 4b) are connected with the same wire layer (5).

摘要翻译： 在包括配置有多个像素（6）的显示部分和控制显示部分的外围集成电路（4a，4b）的图像显示装置中，显示装置设置在具有高耐久性的支撑基板（7）上 对于冲击和弯曲，像素电路（6）由有机半导体TFT构成，外围集成电路（4a，4b）由低温多晶Si-TFT构成，该外围集成电路（4a，4b） ）设置在显示装置的支撑基板（7）上，在制造时取出支撑基板，像素电路（6）和外围集成电路（4a，4b）与同一导线层（5）连接， 。

公开(公告)号：EP1580811A2

公开(公告)日：2005-09-28

申请号：EP05003192.1

申请日：2005-02-15

申请人： Hitachi, Ltd.

发明人： Kawasaki, Masahiro ,  Imazeki, Shuji ,  Ando, Masahiko ,  Sekiguchi, Yoshifumi ,  Hirota, Shoichi

IPC分类号： H01L27/00 ,  H01L51/20

CPC分类号： H01L51/107 ,  H01L51/0541 ,  H01L51/0545

摘要： The present invention aims at providing a high-performance semiconductor device such as display, IC tag, sensor or the like at a low cost by using an organic thin film transistor most members of which can be formed by printing, as a switching element. The present invention relates to a thin film transistor composed of members on a dielectric substrate (101), which are a gate electrode (102), a dielectric film (103), source/drain electrodes (104, 105), and a semiconductor layer (107), wherein on said semiconductor layer (107) there are formed at least two passivation films (108, 109) of a first passivation film (108) capping said semiconductor layer (107) to protect it and a second passivation film (109) covering larger area than that of said first passivation film (108) to protect all of said members.

摘要翻译： 本发明旨在通过使用其大部分可通过印刷形成的有机薄膜晶体作为开关元件，以低成本提供诸如显示器，IC标签，传感器等的高性能半导体器件。 本发明涉及一种薄膜晶体管，它由电介质基片（101）上的构成栅电极（102），电介质膜（103），源/漏电极（104,105）和半导体层 （107），其中在所述半导体层（107）上形成有覆盖所述半导体层（107）以保护其的第一钝化膜（108）的至少两个钝化膜（108,109）和第二钝化膜（109,109） ）覆盖比所述第一钝化膜（108）的面积更大的面积，以保护所有所述构件。

公开(公告)号：EP0724183B1

公开(公告)日：2002-07-31

申请号：EP96100908.1

申请日：1996-01-23

申请人： Hitachi, Ltd.

发明人： Wakagi, Masatoshi ,  Onisawa, Kenichi ,  Ando, Masahiko ,  Kaneko, Toshiki ,  Minemura, Tetsuroh ,  Okada, Tomohiro

IPC分类号： G02F1/136

CPC分类号： G02F1/13458 ,  G02F1/1345 ,  G02F1/1362 ,  G02F2001/13629

公开(公告)号：EP2063471B1

公开(公告)日：2012-10-03

申请号：EP07121569.3

申请日：2007-11-26

申请人： Hitachi Ltd.

发明人： Nakako, Hideo ,  Yamamoto, Kazunori ,  Kumashiro, Yasushi ,  Ando, Masahiko ,  Shiba, Takeo c/o Hitachi, Ltd

IPC分类号： H01L51/05

CPC分类号： H01L51/052 ,  H01L51/0043 ,  H01L51/0545

公开(公告)号：EP1850404A3

公开(公告)日：2012-09-19

申请号：EP07007441.4

申请日：2007-04-11

申请人： Hitachi, Ltd.

发明人： Fujimori, Masaaki ,  Hashizume, Tomihiro ,  Ando, Masahiko

IPC分类号： H01L51/10

CPC分类号： H01L51/0012 ,  H01L51/0003 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/102

摘要： A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.

摘要翻译： 一种场效应晶体管的制造方法，其中，在衬底上提供图案化的栅电极，并且在衬底和栅电极上设置栅极绝缘体，源电极和漏电极在第一电极和第二电极之间彼此间隔开 栅绝缘体，设置成为源电极和漏电极之间的沟道的区域，该区域与源电极和漏电极中的任一个之间的边界是线性的，该区域与漏极中的任一个 电极和源电极是非线性的，边界具有连续或不连续的形状，并且边界部分具有多个凹部，该区域的表面具有亲水性，并且该区域的周边区域准备具有水 - 向该区域供给含有半导体有机分子的溶液，并使溶液干燥。

公开(公告)号：EP1918996A2

公开(公告)日：2008-05-07

申请号：EP07020716.2

申请日：2007-10-23

申请人： Hitachi, Ltd.

发明人： Fujimori, Masaaki ,  Shiba, Takeo ,  Ando, Masahiko ,  Kawasaki, Masahiro ,  Hashizume, Tomihiro

IPC分类号： H01L27/28 ,  H01L27/32

CPC分类号： H01L27/3274 ,  H01L27/1292 ,  H01L27/283 ,  H01L51/0004

摘要： The present invention provides a picture element driving circuit of an active matrix display device, with a configuration of no through-holes, including two or more FETs. A display device of the present invention has a structure in which a first field-effect transistor (213) and a second field-effect transistor (211) are provided, insulation films of the first and second field-effect transistor are formed on the same layer, and semiconductors used as channels of the two field-effect transistors are formed on both surfaces of the insulation film, respectively. The display device has an electric circuit of a structure in which one of source/drain electrodes of the first field-effect transistor (311) is used as a gate electrode of the second field-effect transistor.

摘要翻译： 本发明提供了一种有源矩阵显示装置的像素驱动电路，其具有不包括通孔的结构，包括两个或更多个FET。 本发明的显示装置具有这样的结构，其中提供第一场效应晶体管（213）和第二场效应晶体管（211），第一和第二场效应晶体管的绝缘膜形成在其上 层和用作两个场效应晶体管的沟道的半导体分别形成在绝缘膜的两个表面上。 显示装置具有其中第一场效应晶体管（311）的源极/漏极中的一个被用作第二场效应晶体管的栅极的结构的电路。

公开(公告)号：EP1333317A2

公开(公告)日：2003-08-06

申请号：EP02015383.9

申请日：2002-07-10

申请人： Hitachi, Ltd.

发明人： Honda, Mitsutoshi ,  Naito, Takashi ,  Sugita, Tatsuya ,  Ando, Masahiko

IPC分类号： G02F1/35

CPC分类号： G02F1/3515 ,  G02F2201/066

摘要： An optical switch includes at least one light-receiving core (a) for receiving an optical signal, a plurality of light-emitting cores (b, c) which are used selectively for emitting the optical signal, and a plurality of waveguides (1) connecting the light-receiving core and the plurality of light-emitting cores. A nonlinear optical element (3) which, when pumped, changes its refractive index by 2% or above relative to the surroundings to control a traveling direction of the optical signal is disposed near at least one of the plurality of waveguides.