公开(公告)号：EP1879240A2

公开(公告)日：2008-01-16

申请号：EP07005965.4

申请日：2007-03-22

申请人： Hitachi, Ltd.

发明人： Hashizume, Tomihiro ,  Fujimori, Masaaki ,  Suwa, Yuji ,  Arai, Tadashi

IPC分类号： H01L51/10

CPC分类号： H01L51/0021 ,  H01L51/0545 ,  H01L51/105

摘要： A method for determining the combination of the electrode and organic semiconductor with improved electron injection efficiency and hole injection efficiency in an organic TFT is provided, two types of FETs, that is, an n channel FET and a p channel FET are realized, and further, a complementary TFT (CTFT) is provided. The method for obtaining the vacuum level shift at the electrode metal/organic semiconductor interface from physical constants of constituent elements of the electrode and the organic semiconductor is provided. By changing the electrode metal through an electrochemical method, the electrodes whose electron injection and hole injection can be controlled are formed. By using these electrodes, two types of FETs such as an n channel FET and a p channel FET are realized, thereby providing a complementary TFT (CTFT).

摘要翻译： 设置在电极和有机半导体在有机TFT改进的电子注入效率和空穴注入效率的组合用于确定性采矿的方法，两种类型的FET的所做的是，正沟道FET和p沟道的FET被实现，并且进一步， 互补TFT（CTFT）被提供。 提供了一种用于获得在从电极和有机半导体构成元素的物理常数，电极金属/有机半导体界面处的真空能级位移的方法。 通过改变电极金属电化学方法，所述电子注入电极和谁的空穴注入可以被控制而形成。 通过使用这些电极，两种类型的FET：诸如n沟道FET和p沟道FET被实现，从而提供一个互补TFT（CTFT）。

公开(公告)号：EP1850404A2

公开(公告)日：2007-10-31

申请号：EP07007441.4

申请日：2007-04-11

申请人： Hitachi, Ltd.

发明人： Fujimori, Masaaki ,  Hashizume, Tomihiro ,  Ando, Masahiko

IPC分类号： H01L51/10

CPC分类号： H01L51/0012 ,  H01L51/0003 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/102

摘要： A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.

摘要翻译： 一种场效应晶体管的制造方法，其中，在基板上设置图案化栅极电极，并且在基板上设置栅极绝缘体，栅电极，源电极和漏极彼此间隔开 栅极绝缘体，设置作为源电极和漏极之间的沟道的区域，该区域与源电极和漏电极中的任一个之间的边界是线性的，该区域和漏极中的任一个之间的边界 电极和源电极是非线性的，边界具有连续或不连续的形状，并且边界部分具有多个凹部，该区域的表面具有亲水性，并且该区域的周边区域准备具有水 - 将排斥性和包含半导体有机分子的溶液供给到该区域，并将溶液干燥。

公开(公告)号：EP1850404B1

公开(公告)日：2013-10-23

申请号：EP07007441.4

申请日：2007-04-11

申请人： Hitachi, Ltd.

发明人： Fujimori, Masaaki ,  Hashizume, Tomihiro ,  Ando, Masahiko

IPC分类号： H01L51/10

CPC分类号： H01L51/0012 ,  H01L51/0003 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/102

公开(公告)号：EP1855331A2

公开(公告)日：2007-11-14

申请号：EP07005966.2

申请日：2007-03-22

申请人： Hitachi, Ltd.

发明人： Suwa, Yuji ,  Hashizume, Tomihiro ,  Fujimori, Masaaki

IPC分类号： H01L51/10 ,  H01L51/05

CPC分类号： H01L51/0021 ,  H01B1/02 ,  H01B1/16 ,  H01L51/0545 ,  H01L51/105 ,  H05K1/097 ,  H05K3/105

摘要： If an organic transistor is formed by printing with a low cost, there are problems in that an inexpensive electrode material has a high contact resistance with a semiconductor, and an expensive electrode material has a low contact resistance. To solve the problems, the present invention provides an organic transistor and a method of forming the same, the organic transistor being formed with a low material cost and low manufacturing cost and providing a low contact resistance with a semiconductor and high performance.
The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, the present invention uses a property of the second metal, in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.

摘要翻译： 如果通过低成本的印刷形成有机晶体管，则存在廉价电极材料与半导体具有高接触电阻，并且昂贵的电极材料具有低接触电阻的问题。 为了解决这些问题，本发明提供一种有机晶体管及其形成方法，有机晶体管以低成本和低制造成本形成，并提供具有半导体的低接触电阻和高性能。 有机晶体管具有主体由廉价的第一金属形成并且其表面由昂贵但提供高性能的第二金属形成的电极。 为了以低成本获得该结构的稳定性，本发明使用第二金属的特性，其中第二金属在第一金属和第二金属的合金中容易地偏析在第一金属的表面上。

公开(公告)号：EP1850404A3

公开(公告)日：2012-09-19

申请号：EP07007441.4

申请日：2007-04-11

申请人： Hitachi, Ltd.

发明人： Fujimori, Masaaki ,  Hashizume, Tomihiro ,  Ando, Masahiko

IPC分类号： H01L51/10

CPC分类号： H01L51/0012 ,  H01L51/0003 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/102

摘要： A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.

摘要翻译： 一种场效应晶体管的制造方法，其中，在衬底上提供图案化的栅电极，并且在衬底和栅电极上设置栅极绝缘体，源电极和漏电极在第一电极和第二电极之间彼此间隔开 栅绝缘体，设置成为源电极和漏电极之间的沟道的区域，该区域与源电极和漏电极中的任一个之间的边界是线性的，该区域与漏极中的任一个 电极和源电极是非线性的，边界具有连续或不连续的形状，并且边界部分具有多个凹部，该区域的表面具有亲水性，并且该区域的周边区域准备具有水 - 向该区域供给含有半导体有机分子的溶液，并使溶液干燥。

公开(公告)号：EP1855331A3

公开(公告)日：2011-10-19

申请号：EP07005966.2

申请日：2007-03-22

申请人： Hitachi, Ltd.

发明人： Suwa, Yuji ,  Hashizume, Tomihiro ,  Fujimori, Masaaki

IPC分类号： H01L51/10 ,  H01L51/05 ,  H01B1/16 ,  H01B1/22 ,  H05K1/09

CPC分类号： H01L51/0021 ,  H01B1/02 ,  H01B1/16 ,  H01L51/0545 ,  H01L51/105 ,  H05K1/097 ,  H05K3/105

摘要： If an organic transistor is formed by printing with a low cost, there are problems in that an inexpensive electrode material has a high contact resistance with a semiconductor, and an expensive electrode material has a low contact resistance. To solve the problems, the present invention provides an organic transistor and a method of forming the same, the organic transistor being formed with a low material cost and low manufacturing cost and providing a low contact resistance with a semiconductor and high performance.
The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, the present invention uses a property of the second metal, in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.

公开(公告)号：EP1918996A2

公开(公告)日：2008-05-07

申请号：EP07020716.2

申请日：2007-10-23

申请人： Hitachi, Ltd.

发明人： Fujimori, Masaaki ,  Shiba, Takeo ,  Ando, Masahiko ,  Kawasaki, Masahiro ,  Hashizume, Tomihiro

IPC分类号： H01L27/28 ,  H01L27/32

CPC分类号： H01L27/3274 ,  H01L27/1292 ,  H01L27/283 ,  H01L51/0004

摘要： The present invention provides a picture element driving circuit of an active matrix display device, with a configuration of no through-holes, including two or more FETs. A display device of the present invention has a structure in which a first field-effect transistor (213) and a second field-effect transistor (211) are provided, insulation films of the first and second field-effect transistor are formed on the same layer, and semiconductors used as channels of the two field-effect transistors are formed on both surfaces of the insulation film, respectively. The display device has an electric circuit of a structure in which one of source/drain electrodes of the first field-effect transistor (311) is used as a gate electrode of the second field-effect transistor.

摘要翻译： 本发明提供了一种有源矩阵显示装置的像素驱动电路，其具有不包括通孔的结构，包括两个或更多个FET。 本发明的显示装置具有这样的结构，其中提供第一场效应晶体管（213）和第二场效应晶体管（211），第一和第二场效应晶体管的绝缘膜形成在其上 层和用作两个场效应晶体管的沟道的半导体分别形成在绝缘膜的两个表面上。 显示装置具有其中第一场效应晶体管（311）的源极/漏极中的一个被用作第二场效应晶体管的栅极的结构的电路。

公开(公告)号：EP2006929A3

公开(公告)日：2011-05-18

申请号：EP08010391.4

申请日：2008-06-06

申请人： Hitachi Ltd.

发明人： Shiba, Takeo ,  Hashizume, Tomihiro ,  Suwa, Yuji ,  Arai, Tadashi

IPC分类号： H01L51/00 ,  H01L27/28

CPC分类号： H01L51/0012 ,  H01L27/283 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

摘要： The present invention provides a method of manufacturing a thin-film transistor device. This method enables improvement in performance of a complementary TFT circuit incorporated in a thin-and light-weighted image display device or a flexible electronic device and also enables reduction of power consumption and reduction of manufacturing cost of the circuit. Further in the method, the number of manufacturing steps is decreased so that mass production and growth in size of thin film transistor devices are facilitated through a printing technique. In this method, electrodes forming n-type and p-type TFT and an organic semiconductor are made of the same material in both types of TFT by the solution-process and/or printable process method. A first polarizable thin-film 7 is formed on an interface between a gate insulator and a semiconductor, and also a second polarizable thin film 8 provided on an interface between source and drain electrodes 5 and a semiconductor film 9. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films in the area.

公开(公告)号：EP2006929A2

公开(公告)日：2008-12-24

申请号：EP08010391.4

申请日：2008-06-06

申请人： Hitachi Ltd.

发明人： Shiba, Takeo ,  Hashizume, Tomihiro ,  Suwa, Yuji ,  Arai, Tadashi

IPC分类号： H01L51/00 ,  H01L27/28

CPC分类号： H01L51/0012 ,  H01L27/283 ,  H01L51/0004 ,  H01L51/0022 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105

摘要： The present invention provides a method of manufacturing a thin-film transistor device. This method enables improvement in performance of a complementary TFT circuit incorporated in a thin-and light-weighted image display device or a flexible electronic device and also enables reduction of power consumption and reduction of manufacturing cost of the circuit. Further in the method, the number of manufacturing steps is decreased so that mass production and growth in size of thin film transistor devices are facilitated through a printing technique. In this method, electrodes forming n-type and p-type TFT and an organic semiconductor are made of the same material in both types of TFT by the solution-process and/or printable process method. A first polarizable thin-film 7 is formed on an interface between a gate insulator and a semiconductor, and also a second polarizable thin film 8 provided on an interface between source and drain electrodes 5 and a semiconductor film 9. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films in the area.

摘要翻译： 本发明提供一种制造薄膜晶体管器件的方法。 该方法能够提高结合在薄型轻量化图像显示装置或柔性电子装置中的互补TFT电路的性能，并且还能够降低功耗并降低电路的制造成本。 此外，在该方法中，制造步骤的数量减少，从而通过印刷技术促进薄膜晶体管器件的大规模生产和尺寸增长。 在这种方法中，通过溶液处理和/或可印刷的方法，形成n型和p型TFT的电极和有机半导体由两种类型的TFT由相同的材料制成。 第一可极化薄膜7形成在栅极绝缘体和半导体之间的界面上，以及设置在源电极和漏电极5与半导体膜9之间的界面上的第二可极化薄膜8.互补薄膜晶体管 通过将n型TFT区域或p型TFT区域选择性地暴露于光以从该区域中的第一和第二可极化薄膜去除偏振功能来制造器件。

公开(公告)号：EP1918996A3

公开(公告)日：2008-08-20

申请号：EP07020716.2

申请日：2007-10-23

申请人： Hitachi, Ltd.

发明人： Fujimori, Masaaki ,  Shiba, Takeo ,  Ando, Masahiko ,  Kawasaki, Masahiro ,  Hashizume, Tomihiro

IPC分类号： H01L27/28 ,  H01L27/32

CPC分类号： H01L27/3274 ,  H01L27/1292 ,  H01L27/283 ,  H01L51/0004

摘要： The present invention provides a picture element driving circuit of an active matrix display device, with a configuration of no through-holes, including two or more FETs. A display device of the present invention has a structure in which a first field-effect transistor (213) and a second field-effect transistor (211) are provided, insulation films of the first and second field-effect transistor are formed on the same layer, and semiconductors used as channels of the two field-effect transistors are formed on both surfaces of the insulation film, respectively. The display device has an electric circuit of a structure in which one of source/drain electrodes of the first field-effect transistor (311) is used as a gate electrode of the second field-effect transistor.