公开(公告)号：EP0696043A1

公开(公告)日：1996-02-07

申请号：EP95112077.3

申请日：1995-08-01

申请人： HITACHI, LTD.

发明人： Shinada, Hiroyuki ,  Kimura, Shingo ,  Kuroda, Katsuhiro ,  Fukuhara, Satoru ,  Ohshima, Takashi

IPC分类号： H01J1/30

CPC分类号： H01J1/304 ,  H01J2201/317 ,  H01J2237/06316

摘要： A Schottky emission cathode has a filament, a needle-shaped piece of single crystal refractory metal which is attached to the filament and has a flat crystal surface at a tip thereof, and an adsorbed layer including at least one kind of a metal other than the single crystal refractory metal on the flat crystal surface.
The piece of single crystal refractory metal is heated by passing a current through the filament and electrons are extracted by an electric field applied on a tip of the needle-shaped piece of single crystal refractory metal. The tip of the needle-shaped piece of single crystal refractory metal has a radius of curvature of a value to produce an energy width among electrons extracted from the tip not exceeding a predetermined value when the electric field is sufficient to prevent the flat crystal surface from collapsing during operation of the cathode.

摘要翻译： 肖特基发射阴极具有长丝，单晶耐火金属针形片，其附着于灯丝，并且在其顶端具有平坦的晶体表面，以及包含至少一种不同于 单晶难熔金属在平面晶面上。 通过使电流通过灯丝来加热单晶难熔金属片，并通过施加在针状单晶耐火金属片的尖端上的电场来提取电子。 针状单晶耐火金属片的尖端具有一个值的曲率半径，以在电场足以防止平坦的晶体表面时产生从尖端提取的电子之间的能量宽度不超过预定值 在阴极运行期间塌陷。 $$

公开(公告)号：EP0718863B1

公开(公告)日：2000-08-16

申请号：EP95119876.1

申请日：1995-12-15

申请人： HITACHI, LTD.

发明人： Ohshima, Takashi ,  Shinada, Hiroyuki ,  Kuroda, Katsuhiro

IPC分类号： H01J1/30 ,  H01J9/02 ,  H01J37/073

CPC分类号： H01J9/025 ,  H01J1/3042 ,  H01J1/308 ,  H01J37/073 ,  H01J2201/30426

公开(公告)号：EP0380077A3

公开(公告)日：1990-09-12

申请号：EP90101415.9

申请日：1990-01-24

申请人： HITACHI, LTD.

发明人： Murakami, Eiichi ,  Nakagawa, Kiyokazu ,  Ohshima, Takashi ,  Eto, Hiroyuki, Hitachi Daiyon Kyoshinryo ,  Miyao, Masanobu

IPC分类号： H01L29/73 ,  H01L29/76 ,  H01L29/165

CPC分类号： H01L27/085 ,  H01L29/165 ,  H01L29/7373 ,  H01L29/7378 ,  H01L29/7782 ,  H01L29/802

摘要： A transistor having a high carrier mobility and suited for a high-speed operation can be formed by utilizing a fact that the carrier mobility in a strained germanium layer (2, 21) is large. A strain control layer (31, 31A) is provided beneath the germanium layer (2, 21) to impose a compressive strain on the germanium layer (2, 21), and the composition of the strain control layer (31, 31A) in a predetermined range is used to generate the compressive strain surely.

公开(公告)号：EP0696043B1

公开(公告)日：2000-03-08

申请号：EP95112077.3

申请日：1995-08-01

申请人： Hitachi, Ltd.

发明人： Shinada, Hiroyuki ,  Kimura, Shingo ,  Kuroda, Katsuhiro ,  Fukuhara, Satoru ,  Ohshima, Takashi

IPC分类号： H01J1/30

CPC分类号： H01J1/304 ,  H01J2201/317 ,  H01J2237/06316

公开(公告)号：EP0718863A3

公开(公告)日：1998-03-04

申请号：EP95119876.1

申请日：1995-12-15

申请人： HITACHI, LTD.

发明人： Ohshima, Takashi ,  Shinada, Hiroyuki ,  Kuroda, Katsuhiro

IPC分类号： H01J1/30 ,  H01J9/02 ,  H01J37/073

CPC分类号： H01J9/025 ,  H01J1/3042 ,  H01J1/308 ,  H01J37/073 ,  H01J2201/30426

摘要： An electron beam source is provided with an electron forming means (12,2,3) such as a doped layer of Si (2) for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer (4) and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided.

公开(公告)号：EP0718863A2

公开(公告)日：1996-06-26

申请号：EP95119876.1

申请日：1995-12-15

申请人： HITACHI, LTD.

发明人： Ohshima, Takashi ,  Shinada, Hiroyuki ,  Kuroda, Katsuhiro

IPC分类号： H01J1/30 ,  H01J9/02 ,  H01J37/073

CPC分类号： H01J9/025 ,  H01J1/3042 ,  H01J1/308 ,  H01J37/073 ,  H01J2201/30426

摘要： An electron beam source is provided with an electron forming means (12,2,3) such as a doped layer of Si (2) for forming conduction band electrons near the surface of the pointed tip of a needle-shaped structure while suppressing emission of electrons from a valence band. The surface of the pointed tip of the needle-shaped structure is formed with a single-crystal semiconductor or insulator. Preferably a surface passivation layer (4) and/or a highly doped layer is formed on the surface of the needle-shaped structure. Also, means for exciting electrons in a valence band may be provided.

摘要翻译： 例如Si的（2）的针形结构的尖端的表面附近形成传导带的电子，同时抑制的发射的掺杂层：电子束源在电子成形装置（12,2,3）设置有 从价电子并列。 针状结构的尖端的表面上形成有单晶半导体或绝缘体。 优选地，表面钝化层（4）和/或高掺杂层形成在所述针状体的表面上。 因此，用于以价带，可以提供令人兴奋的电子。

公开(公告)号：EP0380077A2

公开(公告)日：1990-08-01

申请号：EP90101415.9

申请日：1990-01-24

申请人： HITACHI, LTD.

发明人： Murakami, Eiichi ,  Nakagawa, Kiyokazu ,  Ohshima, Takashi ,  Eto, Hiroyuki, Hitachi Daiyon Kyoshinryo ,  Miyao, Masanobu

IPC分类号： H01L29/73 ,  H01L29/76 ,  H01L29/165

CPC分类号： H01L27/085 ,  H01L29/165 ,  H01L29/7373 ,  H01L29/7378 ,  H01L29/7782 ,  H01L29/802

摘要： A transistor having a high carrier mobility and suited for a high-speed operation can be formed by utilizing a fact that the carrier mobility in a strained germanium layer (2, 21) is large. A strain control layer (31, 31A) is provided beneath the germanium layer (2, 21) to impose a compressive strain on the germanium layer (2, 21), and the composition of the strain control layer (31, 31A) in a predetermined range is used to generate the compressive strain surely.

摘要翻译： 可以通过利用应变锗层（2,21）中的载流子迁移率大的事实来形成具有高载流子迁移率且适于高速操作的晶体管。 在锗层（2,21）之下设置应变控制层（31,31A），以在锗层（2,21）上施加压缩应变，并且应变控制层（31,31A）的组成在 使用预定范围可靠地产生压缩应变。