公开(公告)号：EP0060635A2

公开(公告)日：1982-09-22

申请号：EP82300973.3

申请日：1982-02-25

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Okabe, Takeaki ,  Katsueda, Mineo ,  Nagata, Minoru ,  Masuhara, Toshiaki ,  Ashikawa, Kazutoshi ,  Kato, Hideaki ,  Ito, Mitsuo ,  Ohtaka, Shigeo ,  Minato, Osamu ,  Sakai, Yoshio

IPC分类号： H01L27/02 ,  H01L23/56 ,  H01L29/78

CPC分类号： H01L29/7811 ,  H01L27/0255 ,  H01L27/0688 ,  H01L29/7808 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor integrated circuit device including a vertical type MOSFET and a gate protection element for the MOSFET is disclosed in which the vertical type MOSFET is made up of a silicon layer (1) of n-type conductivity formed on an n +- type silicon substrate (13), a base region (10) of p-type conductivity formed in the surface of the silicon layer (1) of n-type conductivity, an n +- type source region (11) provided in the base region (10), and a gate electrode (9) formed on a portion of the base region (10) through a gate insulating film (2), and uses the silicon substrate (13) as the drain, and in which the gate protection element is formed of a polycrystalline silicon layer (4,5,6) which is provided on the base region (10) through an insulating film (3) and has an n + -p-n + structure.

公开(公告)号：EP0060635B1

公开(公告)日：1986-05-14

申请号：EP82300973.3

申请日：1982-02-25

申请人： Hitachi, Ltd.

发明人： Yoshida, Isao ,  Okabe, Takeaki ,  Katsueda, Mineo ,  Nagata, Minoru ,  Masuhara, Toshiaki ,  Ashikawa, Kazutoshi ,  Kato, Hideaki ,  Ito, Mitsuo ,  Ohtaka, Shigeo ,  Minato, Osamu ,  Sakai, Yoshio

IPC分类号： H01L27/02 ,  H01L23/56 ,  H01L29/78

CPC分类号： H01L29/7811 ,  H01L27/0255 ,  H01L27/0688 ,  H01L29/7808 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00