公开(公告)号：EP1020899A3

公开(公告)日：2001-02-21

申请号：EP00100159.3

申请日：2000-01-11

申请人： Hitachi, Ltd.

发明人： Suzuki, Kenkichi ,  Nagata, Tetsuya ,  Takahashi, Michiko ,  Saito, Masakazu ,  Ogino, Toshio ,  Miyao, Masanobu

IPC分类号： H01L21/20 ,  H01L21/336

CPC分类号： H01L21/02672 ,  G02F1/13454 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A semiconductor device has a thin film transistor including an insulating substrate (3, 8), an island (1) made of a polycrystalline semiconductor material and disposed on the insulating substrate, a conductive layer (2) made of the polycrystalline semiconductor material and at least one of metals and metallic silicides and surrounding the island, a source region (6) and a drain region (7) spaced from the source region, the source region and the drain region being formed in said island, a gate electrode (4) disposed on the island with an insulating film interposed between the island and the gate electrode, the gate facing a spacing between the source region and the drain region. The polycrystalline semiconductor material forming the island and the conductive layer are fabricated by initially annealing a first amorphous semiconductor material (11) deposited on the insulating substrate with a crystallization-inducing layer (14) made of the at least one of metals and metallic silicides and having a hole (15) corresponding to the island, the crystallization-inducing layer being disposed on a surface of the amorphous semiconductor material on at least one of a substrate side thereof and a side thereof opposite from the substrate side, and then by depositing a second amorphous semiconductor material (18) on the first amorphous semiconductor and annealing the second amorphous semiconductor material.

公开(公告)号：EP1020899A2

公开(公告)日：2000-07-19

申请号：EP00100159.3

申请日：2000-01-11

申请人： Hitachi, Ltd.

发明人： Suzuki, Kenkichi ,  Nagata, Tetsuya ,  Takahashi, Michiko ,  Saito, Masakazu ,  Ogino, Toshio ,  Miyao, Masanobu

IPC分类号： H01L21/20

CPC分类号： H01L21/02672 ,  G02F1/13454 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A semiconductor device has a thin film transistor including an insulating substrate (3, 8), an island (1) made of a polycrystalline semiconductor material and disposed on the insulating substrate, a conductive layer (2) made of the polycrystalline semiconductor material and at least one of metals and metallic silicides and surrounding the island, a source region (6) and a drain region (7) spaced from the source region, the source region and the drain region being formed in said island, a gate electrode (4) disposed on the island with an insulating film interposed between the island and the gate electrode, the gate facing a spacing between the source region and the drain region. The polycrystalline semiconductor material forming the island and the conductive layer are fabricated by initially annealing a first amorphous semiconductor material (11) deposited on the insulating substrate with a crystallization-inducing layer (14) made of the at least one of metals and metallic silicides and having a hole (15) corresponding to the island, the crystallization-inducing layer being disposed on a surface of the amorphous semiconductor material on at least one of a substrate side thereof and a side thereof opposite from the substrate side, and then by depositing a second amorphous semiconductor material (18) on the first amorphous semiconductor and annealing the second amorphous semiconductor material.

摘要翻译： 半导体器件具有薄膜晶体管，该薄膜晶体管包括绝缘衬底（3,8），由多晶半导体材料制成并设置在绝缘衬底上的岛（1），由多晶半导体材料制成的导电层（2） 至少一个金属和金属硅化物并且围绕该岛，源极区（6）和漏极区（7）与源极区隔开，源极区和漏极区形成在所述岛中，栅电极（4） 设置在岛上，绝缘膜介于岛和栅极之间，栅极面对源极区和漏极区之间的间隔。 形成岛和导电层的多晶半导体材料是通过用由金属和金属硅化物中的至少一种制成的结晶诱导层（14）来初始退火沉积在绝缘衬底上的第一非晶半导体材料（11）来制造的， 具有对应于岛的孔（15），所述结晶诱导层设置在所述非晶半导体材料的表面上，所述结晶诱导层在其基板侧和与所述基板侧相对的一侧中的至少一个上，然后通过沉积 第二非晶半导体材料（18），并且退火第二非晶半导体材料。