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    TFT with large-grain polycrystalline active layer
    1.
    发明公开
    TFT with large-grain polycrystalline active layer 审中-公开
    具有多晶大结晶的活性层的TFT

    公开(公告)号：EP1020899A3

    公开(公告)日：2001-02-21

    申请号：EP00100159.3

    申请日：2000-01-11

    申请人： Hitachi, Ltd.

    发明人： Suzuki, Kenkichi ,  Nagata, Tetsuya ,  Takahashi, Michiko ,  Saito, Masakazu ,  Ogino, Toshio ,  Miyao, Masanobu

    IPC分类号： H01L21/20 ,  H01L21/336

    CPC分类号： H01L21/02672 ,  G02F1/13454 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

    摘要： A semiconductor device has a thin film transistor including an insulating substrate (3, 8), an island (1) made of a polycrystalline semiconductor material and disposed on the insulating substrate, a conductive layer (2) made of the polycrystalline semiconductor material and at least one of metals and metallic silicides and surrounding the island, a source region (6) and a drain region (7) spaced from the source region, the source region and the drain region being formed in said island, a gate electrode (4) disposed on the island with an insulating film interposed between the island and the gate electrode, the gate facing a spacing between the source region and the drain region. The polycrystalline semiconductor material forming the island and the conductive layer are fabricated by initially annealing a first amorphous semiconductor material (11) deposited on the insulating substrate with a crystallization-inducing layer (14) made of the at least one of metals and metallic silicides and having a hole (15) corresponding to the island, the crystallization-inducing layer being disposed on a surface of the amorphous semiconductor material on at least one of a substrate side thereof and a side thereof opposite from the substrate side, and then by depositing a second amorphous semiconductor material (18) on the first amorphous semiconductor and annealing the second amorphous semiconductor material.

    TFT with large-grain polycrystalline active layer
    2.
    发明公开
    TFT with large-grain polycrystalline active layer 审中-公开
    TFT mit einer aktiven polykristallinen Schicht mit grossen Kristallinen

    公开(公告)号：EP1020899A2

    公开(公告)日：2000-07-19

    申请号：EP00100159.3

    申请日：2000-01-11

    申请人： Hitachi, Ltd.

    发明人： Suzuki, Kenkichi ,  Nagata, Tetsuya ,  Takahashi, Michiko ,  Saito, Masakazu ,  Ogino, Toshio ,  Miyao, Masanobu

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02672 ,  G02F1/13454 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

    摘要： A semiconductor device has a thin film transistor including an insulating substrate (3, 8), an island (1) made of a polycrystalline semiconductor material and disposed on the insulating substrate, a conductive layer (2) made of the polycrystalline semiconductor material and at least one of metals and metallic silicides and surrounding the island, a source region (6) and a drain region (7) spaced from the source region, the source region and the drain region being formed in said island, a gate electrode (4) disposed on the island with an insulating film interposed between the island and the gate electrode, the gate facing a spacing between the source region and the drain region. The polycrystalline semiconductor material forming the island and the conductive layer are fabricated by initially annealing a first amorphous semiconductor material (11) deposited on the insulating substrate with a crystallization-inducing layer (14) made of the at least one of metals and metallic silicides and having a hole (15) corresponding to the island, the crystallization-inducing layer being disposed on a surface of the amorphous semiconductor material on at least one of a substrate side thereof and a side thereof opposite from the substrate side, and then by depositing a second amorphous semiconductor material (18) on the first amorphous semiconductor and annealing the second amorphous semiconductor material.

    摘要翻译： 半导体器件具有薄膜晶体管，该薄膜晶体管包括绝缘衬底（3,8），由多晶半导体材料制成并设置在绝缘衬底上的岛（1），由多晶半导体材料制成的导电层（2） 至少一个金属和金属硅化物并且围绕该岛，源极区（6）和漏极区（7）与源极区隔开，源极区和漏极区形成在所述岛中，栅电极（4） 设置在岛上，绝缘膜介于岛和栅极之间，栅极面对源极区和漏极区之间的间隔。 形成岛和导电层的多晶半导体材料是通过用由金属和金属硅化物中的至少一种制成的结晶诱导层（14）来初始退火沉积在绝缘衬底上的第一非晶半导体材料（11）来制造的， 具有对应于岛的孔（15），所述结晶诱导层设置在所述非晶半导体材料的表面上，所述结晶诱导层在其基板侧和与所述基板侧相对的一侧中的至少一个上，然后通过沉积 第二非晶半导体材料（18），并且退火第二非晶半导体材料。

    A multiplexed driving method for an optical switching element employing ferroelectric liquid crystal
    3.
    发明公开
    A multiplexed driving method for an optical switching element employing ferroelectric liquid crystal 失效
    一种用于控制复用含有光开关元件的铁电液晶的方法。

    公开(公告)号：EP0244804A2

    公开(公告)日：1987-11-11

    申请号：EP87106442.4

    申请日：1987-05-04

    申请人： HITACHI, LTD.

    发明人： Umeda, Takao ,  Nagata, Tetsuya ,  Simazaki, Yuzuru ,  Igawa, Tatsuo ,  Hori, Yasuro

    IPC分类号： G09G3/36

    CPC分类号： G09G3/3629 ,  G09G3/3696 ,  G09G2310/06 ,  G09G2310/063 ,  Y10S359/90

    摘要： A multiplexed driving method of an optical switching element employing ferroelectric liquid crystal with a negative dielectric anisotropy including signal electrodes S i ) and common signal electrodes (C₁, C₂) arranged in matrix and a ferroelectric liquid crystal layer disposed therebetween so as to constitute pixels (A i , B i ) at the respective facing portions of the signal electrodes (S i ) and the common signal electrodes (C₁, C₂) comprising a step of applying a common writing signal voltage to one of the common signal electrode to select pixels to which information be written, simultaneously applying a common status holding AC signal voltage to the other common signal electrodes covering non-selected pixels and simultaneously applying one of two signal pulses with opposite polarities to the signal electrodes, whereby resultant information writing voltages formed in combination of the common writing signal voltage and the signal pulses, which are enough to determine the orientation of the ferroelectric liquid crystal molecules, are applied on the selected pixels and resultant AC status holding voltage formed in combination of the common status holding AC signal voltage and the signal pulses which determine the limited bias voltage for the resultant AC voltage are applied on the non-selected pixels.

    摘要翻译： 的光开关元件用人具有负介电各向异性，包括信号电极的Si的铁电液晶）和以矩阵排布的公共信号的电极（C1，C2）之间，从而构成像素设在其铁电液晶层的复用的驱动方法（艾 ，Bi）的在面向信号电极（Si）和公共信号电极（C1，C2）包括将一个共同的写入信号电压施加到所述公共信号电极中的一个以选择像素的步骤的部分的respectivement到哪个信息被写入 ，同时施加一个公共状态保持AC信号电压到覆盖非选择的像素，并且同时施加两个信号脉冲中的一个极性相反的信号电极，由此最终的信息写入电压在所述公共写入信号的组合形成的其他常见的信号电极 电压和信号脉冲，足以确定矿井方向 铁电液晶分子，被施加在所选择的像素和引发的AC状态的保持电压在公共状态组合形成的保持交流信号电压和确定性矿对所产生的AC电压的有限偏置电压在非选择施加的信号脉冲 像素。

    Electrostatic recorder and electrostatic latent image measuring instrument
    6.
    发明公开
    Electrostatic recorder and electrostatic latent image measuring instrument 失效
    静电记录设备和仪器，用于测量静电潜像。

    公开(公告)号：EP0452818A2

    公开(公告)日：1991-10-23

    申请号：EP91105810.5

    申请日：1991-04-11

    申请人： HITACHI, LTD.

    发明人： Miyasaka, Toru ,  Umeda, Takao ,  Nagata, Tetsuya ,  Igawa, Tatsuo

    IPC分类号： G03G15/00

    CPC分类号： G03G15/5037 ,  G01R29/14

    摘要： An electrostatic recorder is provided with an electrostatic latent image measuring instrument (4c) for measuring a state of an electrostatic latent image formed on a photosensitive substance (6), and executes a printing process until an electrostatic latent image formed on a surface of a photosensitive substance (6) based on measured data is transferred onto a blank form as a visual image by means of a transfer device by adjusting control factors such as exposure, exposure time, electrostatic charge voltage, development bias, temperature and humidity. Further, the electrostatic latent image measuring instrument (4c) is provided with distance sensors (1), which when a measuring electrode (3a) is made close to the photosensitive substance (6), keeps the distance therebetween constant. It is thus possible to measure an electrostatic latent image even if the photosensitive substance (6) is eccentric. Furthermore, spark between the measuring electrode (3a) and the photosensitive substance (6) is prevented by filling with a gas having a high spark starting voltage between the measuring electrode (3a) and the photosensitive substance (6) of the electrostatic latent image measuring instrument (4c).

    摘要翻译： 一个静电记录在静电潜像提供有用于测量形成在感光物质（6）的静电潜像的状态测定装置（4C），和直到在静电潜像的感光的表面上形成执行打印处理 如曝光，曝光时间，静电充电电压，显影偏压，温度和湿度：基于测得的数据的物质（6）由一传送装置的方式通过调节控制因素转移到一个空白表格作为可视图像。 此外，静电潜像测量仪（图4c）设置有距离传感器（1），其中，当测量电极（3A）由靠近感光物质（6），保持有距离恒定之间。 这是可能，从而测量到静电即使感光物质（6）是偏心的潜像。 更进一步，在测量电极（3a）和所述感光物质（6）之间的火花通过用气体填充具有与测量电极（3a）和所述光敏物质之间的高火花开始电压防治（6）的静电潜像的测量的 仪器（图4c）。

    Electrostatic recorder and electrostatic latent image measuring instrument
    8.
    发明公开
    Electrostatic recorder and electrostatic latent image measuring instrument 失效
    静电记录仪和静电图像测量仪器

    公开(公告)号：EP0452818A3

    公开(公告)日：1992-08-19

    申请号：EP91105810.5

    申请日：1991-04-11

    申请人： HITACHI, LTD.

    发明人： Miyasaka, Toru ,  Umeda, Takao ,  Nagata, Tetsuya ,  Igawa, Tatsuo

    IPC分类号： G03G15/00

    CPC分类号： G03G15/5037 ,  G01R29/14

    摘要： An electrostatic recorder is provided with an electrostatic latent image measuring instrument (4c) for measuring a state of an electrostatic latent image formed on a photosensitive substance (6), and executes a printing process until an electrostatic latent image formed on a surface of a photosensitive substance (6) based on measured data is transferred onto a blank form as a visual image by means of a transfer device by adjusting control factors such as exposure, exposure time, electrostatic charge voltage, development bias, temperature and humidity. Further, the electrostatic latent image measuring instrument (4c) is provided with distance sensors (1), which when a measuring electrode (3a) is made close to the photosensitive substance (6), keeps the distance therebetween constant. It is thus possible to measure an electrostatic latent image even if the photosensitive substance (6) is eccentric. Furthermore, spark between the measuring electrode (3a) and the photosensitive substance (6) is prevented by filling with a gas having a high spark starting voltage between the measuring electrode (3a) and the photosensitive substance (6) of the electrostatic latent image measuring instrument (4c).

    A multiplexed driving method for an optical switching element employing ferroelectric liquid crystal
    9.
    发明公开
    A multiplexed driving method for an optical switching element employing ferroelectric liquid crystal 失效
    用于采用电磁液晶的光学切换元件的多路驱动方法

    公开(公告)号：EP0244804A3

    公开(公告)日：1989-12-13

    申请号：EP87106442.4

    申请日：1987-05-04

    申请人： HITACHI, LTD.

    发明人： Umeda, Takao ,  Nagata, Tetsuya ,  Simazaki, Yuzuru ,  Igawa, Tatsuo ,  Hori, Yasuro

    IPC分类号： G09G3/36

    CPC分类号： G09G3/3629 ,  G09G3/3696 ,  G09G2310/06 ,  G09G2310/063 ,  Y10S359/90

    摘要： A multiplexed driving method of an optical switching element employing ferroelectric liquid crystal with a negative dielectric anisotropy including signal electrodes S i ) and common signal electrodes (C₁, C₂) arranged in matrix and a ferroelectric liquid crystal layer disposed therebetween so as to constitute pixels (A i , B i ) at the respective facing portions of the signal electrodes (S i ) and the common signal electrodes (C₁, C₂) comprising a step of applying a common writing signal voltage to one of the common signal electrode to select pixels to which information be written, simultaneously applying a common status holding AC signal voltage to the other common signal electrodes covering non-selected pixels and simultaneously applying one of two signal pulses with opposite polarities to the signal electrodes, whereby resultant information writing voltages formed in combination of the common writing signal voltage and the signal pulses, which are enough to determine the orientation of the ferroelectric liquid crystal molecules, are applied on the selected pixels and resultant AC status holding voltage formed in combination of the common status holding AC signal voltage and the signal pulses which determine the limited bias voltage for the resultant AC voltage are applied on the non-selected pixels.