摘要:
The invention describes a display which comprises a film (2) mainly composed of silica which film absorbs a light having a wavelength of 250 nm more intensely than a light having a wavelength of 190 nm. It also describes a display, which comprises a film (2) mainly composed of silica which film does not substantially fluorescent when irradiated by argon gas laser at an output power of 100 mW. The display may be a cathode-ray tube or a liquid crystal display.
摘要:
A laser Raman spectrophotometry system for analyzing a sample material by measuring spectrum of Raman scattering produced by the sample under irradiation of laser light includes a laser light source (2) for excitation of luminescense in addition to a laser light source (1) for the excitation of the Raman scattering, and an optical system (9) for rendering the optical path of the laser beam (5) for luminescence excitation to substantially coincide with the optical path of the laser beam (4) for the Raman scattering immediately before irradiation of the specimen (11). Luminescense spectrum brought about by the laser beam (5) for luminescence excitation is adjusted by adjusting the laser power to simulate the luminescence spectrum concurrently produced by the laser beam (4) for the excitation of Raman scattering, wherein both spectra of luminescence are subtractively combined together, to thereby cancel the luminescence component and allow only the spectrum of Raman-scattered light to be measured with a correspondingly enhanced accuracy.
摘要:
An anti-reflection film (2) is produced on the panel surface of a cathode-ray tube (1) by: (A) preparing a solution (8) for forming an anti-reflection film (2), which contains water and an alkoxide having the formula, M(OR) n wherein M is Si or a metal selected from the group consisting of Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different, (B) coating the solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), and (C) applying an ultraviolet light (7) to the solution (8) for forming an anti-reflection film (2) coated on said surface to cure the solution to form a transparent film with fine roughness. This production method is carried out using an apparatus having: (a) a coating means (3) for coating the above solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), (b) a transferring means (4) for transferring the solution-coated cathode-ray tube (1), and (c) an ultraviolet light-applying means (7) for photocuring the solution (8) coated on the cathode-ray tube (1) during the transfer of the solution-coated cathode-ray tube. In the above method, when a silicon alkoxide is used as the metal alkoxide, there can be obtained a cathode-ray tube having an anti-reflection film made of alkali-free silica on the outermost surface of the panel, said anti-reflection film giving a ratio of Si-O-Si peak intensity to Si-OH peak intensity of 4 or more when measured for infrared spectrum. Further embodiments include an antistatic layer and the inclusion of an organic dye into the anti-reflection film.
摘要:
An anti-reflection film (2) is produced on the panel surface of a cathode-ray tube (1) by:
(A) preparing a solution (8) for forming an anti-reflection film (2), which contains water and an alkoxide having the formula,
M(OR) n
wherein M is Si or a metal selected from the group consisting of Ti, Al, Zr, Sn, In, Sb and Zn; R is an alkyl group having 1-10 carbon atoms; n is an integer of from 1 to 8; and when n is not 1, the alkyl groups represented by R may be the same or different, (B) coating the solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), and (C) applying an ultraviolet light (7) to the solution (8) for forming an anti-reflection film (2) coated on said surface to cure the solution to form a transparent film with fine roughness.
This production method is carried out using an apparatus having:
(a) a coating means (3) for coating the above solution (8) for forming an anti-reflection film (2) on the outermost surface of the panel of a cathode-ray tube (1), (b) a transferring means (4) for transferring the solution-coated cathode-ray tube (1), and (c) an ultraviolet light-applying means (7) for photocuring the solution (8) coated on the cathode-ray tube (1) during the transfer of the solution-coated cathode-ray tube.
In the above method, when a silicon alkoxide is used as the metal alkoxide, there can be obtained a cathode-ray tube having an anti-reflection film made of alkali-free silica on the outermost surface of the panel, said anti-reflection film giving a ratio of Si-O-Si peak intensity to Si-OH peak intensity of 4 or more when measured for infrared spectrum. Further embodiments include an antistatic layer and the inclusion of an organic dye into the anti-reflection film.