公开(公告)号：EP1649521B1

公开(公告)日：2012-12-19

申请号：EP04739806.0

申请日：2004-06-11

申请人： Humboldt-Universität zu Berlin

发明人： MASSELINK, William, Ted ,  SEMTSIV, Mykhaylo, Petrovych

IPC分类号： H01L31/0352 ,  H01S5/34 ,  H01L29/12

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L29/125 ,  H01L29/205 ,  H01L31/0352 ,  H01L31/035236

公开(公告)号：EP1671377A2

公开(公告)日：2006-06-21

申请号：EP04787080.3

申请日：2004-09-30

申请人： Humboldt-Universität zu Berlin

发明人： MASSELINK, William, Ted ,  HATAMI, Fariba

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/3412 ,  H01S5/34306 ,  H01L2924/00

摘要： The inventive semiconductor device for emitting light when a voltage is applied comprises a first (3), second (5) and third active semiconductor area (7A-7C). The conductivity of the first semiconductor area (3) is based on charge carriers of a first type of conductivity. The conductivity of the second semiconductor area (5) is based on charge carriers of a second type of conductivity whereby the charge thereof is opposite to that of the charge carriers of the first type of conductivity. The active semiconductor area (5 13) is arranged between the first and second semiconductor area (3, 5). Quantum structures (13) are embedded in the active semiconductor area (5) and are made of a semiconductor material which has a direct band gap. The quantum structures are structures whose dimension in at least one direction of expansion is small enough such that the properties of the structure can be substantially influenced by quantum mechanical processes.

公开(公告)号：EP1649521A1

公开(公告)日：2006-04-26

申请号：EP04739806.0

申请日：2004-06-11

申请人： Humboldt-Universität zu Berlin

发明人： MASSELINK, William, Ted ,  SEMTSIV, Mykhaylo, Petrovych

IPC分类号： H01L31/0352 ,  H01S5/34 ,  H01L29/12

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L29/125 ,  H01L29/205 ,  H01L31/0352 ,  H01L31/035236

摘要： The invention relates to a quantum well structure comprising a quantum well layer (107) arranged between two barrier layers (109, 112). Said quantum well structure is characterised in that at least one of the barrier layers (109) has nanostructures (110) that compensate or modulate a lateral homogeneity of the barrier layer (109), that exists without the nanostructures (110), i.e. a homogeneity in the directions extending perpendicularly to the stack direction of the layers in the quantum well structure.