公开(公告)号：EP2517250A1

公开(公告)日：2012-10-31

申请号：EP09796379.7

申请日：2009-12-21

申请人： IMEC

发明人： SOREE, Bart ,  MAGNUS, Wim

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/125 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78696

摘要： A Field Effect Transistor (FET) semiconductor device comprising at least one nanostructure, comprises at least - a uniformly doped beam-shaped nanostructure having two major surfaces, - a gate electrode provided at either major surface of the nanostructure, and - an insulating layer between each of the major surfaces of the nanostructure and the gate electrodes to form a double gate nanostructure pinch-off FET. It is an advantage of such FET that pinch-off voltage and current of the FET can be independently tuned.

公开(公告)号：EP2257968A1

公开(公告)日：2010-12-08

申请号：EP09724159.0

申请日：2009-01-29

申请人： International Business Machines Corporation

发明人： HOVEL, Harold, J. ,  HUANG, Qiang ,  SHAO, Xiaoyan ,  VICHICONTI, James ,  WALKER, George, F.

IPC分类号： H01L21/00 ,  H01L31/06

CPC分类号： H01L31/18 ,  B82Y10/00 ,  B82Y30/00 ,  C30B29/02 ,  C30B29/06 ,  C30B29/40 ,  C30B29/52 ,  C30B29/60 ,  C30B29/605 ,  C30B33/10 ,  H01L21/30604 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/20

摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.

公开(公告)号：EP1041639B1

公开(公告)日：2007-01-03

申请号：EP00400703.5

申请日：2000-03-14

申请人： FRANCE TELECOM

发明人： Hernandez, Caroline ,  Campidelli, Yves ,  Rivoire, Maurice ,  Bensahel, Daniel

IPC分类号： H01L29/165 ,  H01L21/336 ,  H01L31/18 ,  H01L31/0352 ,  H01L33/00 ,  H01L31/072

CPC分类号： H01L31/1812 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/32115 ,  H01L29/125 ,  H01L29/165 ,  H01L31/035254 ,  H01L33/24 ,  H01L33/34 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/2234 ,  H01S5/3224 ,  Y02E10/50

公开(公告)号：EP1714330A1

公开(公告)日：2006-10-25

申请号：EP05707994.9

申请日：2005-02-10

申请人： International Business Machines Corporation

发明人： FURUKAWA, Toshiharu ,  HAKEY, Mark, Charles ,  HOLMES, Steven, John ,  HORAK, David, Vaclav ,  KOBURGER, Charles, William, III ,  MITCHELL, Peter ,  NESBIT, Larry, Alan

IPC分类号： H01L51/05 ,  H01L51/30

CPC分类号： H01L51/057 ,  B82Y10/00 ,  G11C13/025 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/66409 ,  H01L29/772 ,  H01L51/0048 ,  Y10S977/734

摘要： A method for forming carbon nanotube field effect transistors, arrays of carbon nanotube field effect transistors, and device structures and arrays of device structures formed by the methods. The methods include forming a stacked structure including a gate electrode layer and catalyst pads each coupled electrically with a source/drain contact. The gate electrode layer is divided into multiple gate electrodes and at least one semiconducting carbon nanotube is synthesized by a chemical vapor deposition process on each of the catalyst pads. The completed device structure includes a gate electrode with a sidewall covered by a gate dielectric and at least one semi­conducting carbon nanotube adjacent to the sidewall of the gate electrode. Source/drain contacts are electrically coupled with opposite ends of the semiconducting carbon nanotube to complete the device structure. Multiple device structures may be configured either as a memory circuit or as a logic circuit.

公开(公告)号：EP1419519A1

公开(公告)日：2004-05-19

申请号：EP02768390.3

申请日：2002-07-31

申请人： The Board of Trustees for theUniversity of Illinois ,  Board of Regents,The University of Texas System

发明人： HOLONYAK, Nick, Jr. ,  DUPUIS, Russell

IPC分类号： H01L21/00 ,  H01L29/06

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L29/125 ,  H01L29/127 ,  H01L33/06 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3416 ,  H01S5/3425

摘要： A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device; and providing a layer of quantum dots (825, 875) disposed in one of the adjacent layers, and spaced from the quantum well, whereby carriers can tunnel in either direction between the quantum well and the quantum dots.

公开(公告)号：EP1088346A1

公开(公告)日：2001-04-04

申请号：EP99928062.1

申请日：1999-06-18

申请人： The Secretary of State for Defence

发明人： JEFFERSON, John Henry ,  PHILLIPS, Timothy Jonathan

IPC分类号： H01L29/772 ,  H01L29/812 ,  H01L29/205 ,  H01L21/335 ,  H01L21/20

CPC分类号： B82Y10/00 ,  H01L29/125 ,  H01L29/127 ,  H01L29/66469 ,  H01L29/7613 ,  H01L29/775 ,  Y10S977/937

摘要： A quantum wire field-effect transistor having at least one, one-dimensional, elongate conducting means (14) provided by at least a first semiconductor layer surrounded by a wider bandgap, second semiconductor layer (12, 13) and extending between source (24) and drain (26) electrodes, and in which there is provided a backgate structure (8, 23) to control conduction in the elongate conducting means. The transistor can be a Single Electron Transistor (SET) wherein two adjacent gate electrodes (16, 18) are disposed over the elongate conducting means to induce a quantum dot (17) therein, and it can be made with the first semiconductor layer material as GaAs and the second semiconductor layer material as A1GaAs. A method of making the transistor involves preferentially growing the elongate conducting means at the bottom of a groove (6) lined with the second semiconductor layer (12).

公开(公告)号：EP0678946B1

公开(公告)日：1997-06-25

申请号：EP95301771.2

申请日：1995-03-16

申请人： SHARP KABUSHIKI KAISHA

发明人： Bestwick, Timothy David ,  Dawson, Martin David ,  Kean, Alistair Henderson ,  Duggan, Geoffrey

IPC分类号： H01S3/19 ,  H01L21/20 ,  H01L21/308 ,  H01L29/12 ,  H01L33/00 ,  H01L31/0352

CPC分类号： B82Y10/00 ,  H01L29/125 ,  H01L29/127 ,  H01L29/66469 ,  Y10S438/962

公开(公告)号：EP0452950A3

公开(公告)日：1992-07-22

申请号：EP91106324.6

申请日：1991-04-19

申请人： HITACHI, LTD. ,  HITACHI VLSI ENGINEERING CORPORATION

发明人： Yazawa, Masamitsu ,  Hiruma, Kenji ,  Katsuyama, Toshio ,  Futigami, Nobutaka ,  Matsumoto, Hidetoshi ,  Kakibayashi, Hiroshi ,  Koguchi, Masanari ,  Morgan, Gerard P. ,  Ogawa, Kensuke

IPC分类号： H01L29/76 ,  C30B25/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  C30B25/005 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/15 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66522 ,  H01L29/66931 ,  H01L29/7722 ,  H01L29/775 ,  H01L29/861 ,  H01L33/18 ,  H01S5/1042 ,  H01S5/341

摘要： A field effect transistor and a ballistic transistor using semiconductor whiskers (1) each having a desired diameter and formed at a desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.

公开(公告)号：EP0227373A3

公开(公告)日：1989-07-26

申请号：EP86309574.1

申请日：1986-12-09

申请人： HITACHI, LTD.

发明人： Fukuzawa, Tadashi ,  Chinone, Naoki ,  Tonomura, Akira

IPC分类号： H01L21/263

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L21/0277 ,  H01L21/266 ,  H01L29/125 ,  H01L29/127 ,  H01L29/7722 ,  H01S5/341 ,  Y10S148/046 ,  Y10S148/072 ,  Y10S148/137 ,  Y10S438/949 ,  Y10S438/95 ,  Y10S438/962

摘要： Coherent electron beams are used to irradiate an electron beam resist film (9), thereby to expose the film (9) with a predetermined pattern. After processing of the film (9) layers (6,7) below the film (9) can be etched then used as a mask to implant ions into further layers (2,3,4,5). Where one (4) of these layers is e.g. an active layer of a semiconductor laser, the result is that quantum wires (l3) may be formed with a cross-section of 50 nm × 50 nm or less, thereby permitting the production of a laser with a low threshold current. The process is applicable to other devices, and permits sub-micron patterns to be formed accurately with dimensions of 3 to 50 nm.

公开(公告)号：EP2736080A1

公开(公告)日：2014-05-28

申请号：EP12825398.6

申请日：2012-08-21

申请人： Japan Science and Technology Agency

发明人： KOHDA, Makoto ,  NITTA, Junsaku ,  KOBAYASHI, Kensuke

IPC分类号： H01L29/82 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L43/065 ,  B82Y10/00 ,  H01F10/00 ,  H01L27/222 ,  H01L29/0673 ,  H01L29/125 ,  H01L29/205 ,  H01L29/42356 ,  H01L29/66984 ,  H01L29/775 ,  H01L29/7783 ,  H01L29/82 ,  H01L29/861 ,  H01L43/08 ,  H01L43/10

摘要： A rectifying device includes: a one-dimensional channel (18) formed with a semiconductor, electrons traveling through the one-dimensional channel; an electrode (26) that applies an effective magnetic field generated from a spin orbit interaction to the electrons traveling through the one-dimensional channel by applying an electric field to the one-dimensional channel, the effective magnetic field being in a direction intersectional to the direction in which the electrons are traveling; and an external magnetic field generating unit (38) that generates an external magnetic field in the one-dimensional channel.