公开(公告)号：EP1920441A4

公开(公告)日：2009-04-29

申请号：EP06802479

申请日：2006-08-30

Applicant: IBM

Inventor： FREDEMAN GREGORY J ,  KIRIHATA TOSHIAKI ,  LESLIE ALAN J ,  SAFRAN JOHN M

IPC: G11C17/00 ,  G11C7/00 ,  G11C7/02

CPC classification number: G11C17/16 ,  G11C17/165 ,  G11C29/027

Abstract: A one-time-programmable-read-only-memory (OTPROM) is implemented in a two-dimensional array of aggressively scaled silicide migratable e-fuse. Word line (WL) selection is performed by decoding logic (140) at Vdd while the bit line drive is switched between Vdd and a higher voltage, Vp, for programming. The OTPROM is thus compatible with and can be integrated with other technologies without a cost adder and supports optimization of the high current patch for minimal voltage drop during fuse programming. A differential sense amplifier (120) with a programmable reference (130) is used for improved sense margins and can support an entire bit line rather than sense amplifiers (120) being provided for individual fuses.