RANDOM ACCESS ELECTRICALLY PROGRAMMABLE-E-FUSE ROM
    2.
    发明公开
    RANDOM ACCESS ELECTRICALLY PROGRAMMABLE-E-FUSE ROM 审中-公开
    可直接进入电气可编程E-FUSE-ROM

    公开(公告)号:EP1920441A4

    公开(公告)日:2009-04-29

    申请号:EP06802479

    申请日:2006-08-30

    Applicant: IBM

    CPC classification number: G11C17/16 G11C17/165 G11C29/027

    Abstract: A one-time-programmable-read-only-memory (OTPROM) is implemented in a two-dimensional array of aggressively scaled silicide migratable e-fuse. Word line (WL) selection is performed by decoding logic (140) at Vdd while the bit line drive is switched between Vdd and a higher voltage, Vp, for programming. The OTPROM is thus compatible with and can be integrated with other technologies without a cost adder and supports optimization of the high current patch for minimal voltage drop during fuse programming. A differential sense amplifier (120) with a programmable reference (130) is used for improved sense margins and can support an entire bit line rather than sense amplifiers (120) being provided for individual fuses.

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