公开(公告)号：EP1908076A4

公开(公告)日：2009-06-17

申请号：EP06737703

申请日：2006-03-09

Applicant: IBM

Inventor： HSU LOUIS L C ,  JI BRIAN L ,  LAM CHUNG HON ,  WONG HON-SUM PHILIP

IPC: G11C11/24

CPC classification number: G11C13/0004 ,  G11C15/046

Abstract: A non- volatile content addressable memory cell comprises: a first phase change material element, the first phase change material element having one end connected to a match-line; a first transistor, the first transistor having a gate connected to a word-line, a source connected to a true bit-read- write-search-line, and a drain connected to another end of the first phase change material element; a second phase change material element, the second phase change material element having one end connected to the match-line; and a second transistor, the second transistor having a gate connected to the word-line, a source connected to a complementary bit- read-write-search-line, and a drain connected to another end of the second phase change material element.