公开(公告)号：EP1908076A4

公开(公告)日：2009-06-17

申请号：EP06737703

申请日：2006-03-09

Applicant: IBM

Inventor： HSU LOUIS L C ,  JI BRIAN L ,  LAM CHUNG HON ,  WONG HON-SUM PHILIP

IPC: G11C11/24

CPC classification number: G11C13/0004 ,  G11C15/046

Abstract: A non- volatile content addressable memory cell comprises: a first phase change material element, the first phase change material element having one end connected to a match-line; a first transistor, the first transistor having a gate connected to a word-line, a source connected to a true bit-read- write-search-line, and a drain connected to another end of the first phase change material element; a second phase change material element, the second phase change material element having one end connected to the match-line; and a second transistor, the second transistor having a gate connected to the word-line, a source connected to a complementary bit- read-write-search-line, and a drain connected to another end of the second phase change material element.

公开(公告)号：EP2419832A4

公开(公告)日：2014-06-11

申请号：EP10764793

申请日：2010-03-10

Applicant: IBM

Inventor： DENNARD ROBERT H ,  JI BRIAN L

IPC: G06F13/36 ,  H02M3/07 ,  H03K3/356 ,  H03K19/018 ,  H03K19/0185

CPC classification number: H03K3/00 ,  H02M3/07 ,  H03K3/356139 ,  H03K19/01806 ,  H03K19/018521

公开(公告)号：EP1497733A4

公开(公告)日：2008-04-30

申请号：EP03728351

申请日：2003-04-07

Applicant: IBM

Inventor： JI BRIAN L ,  HWANG CHORNG-LII ,  KIRIHATA TOSHIAKI K ,  MUNETOH SEIJI

IPC: G06F12/00 ,  G06F12/08 ,  G11C7/10 ,  G11C8/00 ,  G11C8/12 ,  G11C11/401 ,  G11C11/4093 ,  G06F13/00

CPC classification number: G11C8/12 ,  G06F12/0804 ,  G06F12/0893 ,  G06F12/0897 ,  G06F2212/3042 ,  G11C7/1039 ,  G11C7/1051 ,  G11C7/106 ,  G11C11/4093 ,  G11C2207/2245

Abstract: A memory storage system (10) is disclosed. In an exemplary embodiment, the memory storage system includes a plurality of memory storage banks (12) and a cache (14) in communication therewith. Both the plurality of memory storage banks (12) and the cache (14) further include destructive read memory storage elements.