专利检索 ap:("IBM") AND inv:"LANG ROTBERT N" 第 1 页

1.

发明公开
HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 有权
标题翻译： E E E EN E E E E E E E E E E E

公开(公告)号：EP1586005A4

公开(公告)日：2009-05-13

申请号：EP02786917

申请日：2002-12-05

申请人： IBM

发明人： HUANG WU-SONG , LI WENJIE , MOREAU WAYNE , MEDEIROS DAVID E , PETRILLO KAREN E , LANG ROTBERT N , ANGELOPOULOS MARIE

IPC分类号： G03F7/004 , G03F7/039 , G03F7/30

CPC分类号： G03F7/0045 , G03F7/0392

摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.