HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY
    3.
    发明公开
    HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 有权
    E E E EN E E E E E E E E E E E

    公开(公告)号:EP1586005A4

    公开(公告)日:2009-05-13

    申请号:EP02786917

    申请日:2002-12-05

    申请人: IBM

    IPC分类号: G03F7/004 G03F7/039 G03F7/30

    CPC分类号: G03F7/0045 G03F7/0392

    摘要: The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.