公开(公告)号：EP2522032A4

公开(公告)日：2014-05-28

申请号：EP11732064

申请日：2011-01-05

Applicant: IBM

Inventor： CHANG JOSEPHINE B ,  CHANG LELAND ,  LIN CHUNG-HSUN ,  SLEIGHT JEFFREY W

IPC: H01L29/786 ,  H01L21/265 ,  H01L21/336 ,  H01L29/66

CPC classification number: H01L21/26586 ,  H01L29/1083 ,  H01L29/42384 ,  H01L29/66659 ,  H01L29/66772 ,  H01L29/78615

Abstract: In one exemplary embodiment of the invention, an asymmetric N-type field effect transistor includes: a source region coupled to a drain region via a channel; a gate structure overlying at least a portion of the channel; a halo implant disposed at least partially in the channel, where the halo implant is disposed closer to the source region than the drain region; and a body-tie coupled to the channel. In a further exemplary embodiment, the asymmetric N-type field effect transistor is operable to act as a symmetric N-type field effect transistor.

公开(公告)号：EP2545586A4

公开(公告)日：2016-03-30

申请号：EP11753755

申请日：2011-02-04

Applicant: IBM

Inventor： GUO DECHAO ,  HEN SHU-JEN ,  LIN CHUNG-HSUN ,  SU NING

IPC: H01L27/06 ,  H01L29/16

CPC classification number: H01L27/0688 ,  H01L29/1606 ,  Y10S977/755