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公开(公告)号:EP2750726A1
公开(公告)日:2014-07-09
申请号:EP12775306.9
申请日:2012-08-30
申请人: IHI Ionbond AG
CPC分类号: A61L27/306 , A61F2/30767 , A61F2/3094 , A61F2002/3098 , A61F2310/00317 , A61F2310/00874 , A61L27/042 , A61L27/045 , A61L27/06 , A61L27/10 , A61L27/16 , A61L27/28 , A61L27/303 , A61L27/50 , A61L31/022 , A61L31/026 , A61L31/048 , A61L31/084 , A61L31/088 , A61L2400/10 , A61L2400/12 , A61L2420/02 , A61L2420/08 , A61L2430/12 , A61L2430/24 , H05K999/99 , C08L23/06
摘要: An implant comprises a substrate and a coating on a surface of the substrate, and the coating comprises silicon nitride and has a thickness of from about 1 to about 15 micrometer. A method of providing the implant comprises coating a surface of the implant substrate with the coating comprising silicon nitride and having a thickness of from about 1 to about 15 micrometer by physical vapor deposition.
摘要翻译: 植入物包括基底和基底表面上的涂层,并且涂层包含氮化硅并且具有约1至约15微米的厚度。 提供植入物的方法包括用包含氮化硅的涂层涂覆植入物基底的表面,并且通过物理气相沉积具有约1至约15微米的厚度。
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