公开(公告)号：EP2507599A1

公开(公告)日：2012-10-10

申请号：EP10798279.5

申请日：2010-11-30

Applicant: IMEC

Inventor： TACK, Klaas ,  LAMBRECHTS, Andy ,  HASPESLAGH, Luc

IPC: G01J3/26 ,  G01J3/28 ,  G01J3/12

CPC classification number: G01J3/2823 ,  G01J3/12 ,  G01J3/26 ,  G01J3/2803 ,  G01J2003/1226 ,  G01J2003/265 ,  G01J2003/2806 ,  G01J2003/2826 ,  H04N5/332 ,  H04N5/378

Abstract: An integrated circuit for an imaging system has an array of optical sensors (40), and an array of optical filters (10) each configured to pass a band of wavelengths onto one or more of the sensors, the array of optical filters being integrated with the array of sensors, and the integrated circuit also having read out circuitry (30) to read out pixel values from the array of sensors to represent an image, different ones of the optical filters being configured to have a different thickness, to pass different bands of wavelengths by means of interference, to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

Abstract translation: 用于成像系统的集成电路具有光学传感器阵列（40）和光学滤波器阵列（10），每个光学滤波器被配置为将波长带传递到一个或多个传感器上，光学滤波器阵列与 传感器阵列以及集成电路还具有读出电路（30）以读出来自传感器阵列的像素值以表示图像，不同的光学滤波器被配置为具有不同的厚度以通过不同的频带 通过干涉的波长，以允许检测波长的光谱。 读出电路可以使一个光学滤波器下的多个像素并行读出。 阵列的厚度可能非单调变化。 读出或稍后的图像处理可能涉及波长之间的选择或内插，以执行频谱采样或移位，以补偿厚度误差。

公开(公告)号：EP4137790A1

公开(公告)日：2023-02-22

申请号：EP22200035.8

申请日：2010-11-30

Applicant: Imec VZW

Inventor： TACK, Klaas ,  LAMBRECHTS, Andy ,  HASPESLAGH, Luc

IPC: G01J3/26 ,  G01J3/28 ,  G01J3/12

Abstract: The invention refers to an integrated circuit for an imaging system having arrays of optical sensors (40) and of optical filters (10), integrated with each other, each configured to pass a band of wavelengths, and further having read out circuitry (30) to read out pixel values from the array of sensors (40) to represent an image. Different ones of the optical filters (10) have different thicknesses to pass different bands of wavelengths by means of interference, to allow detection of a spectrum of wavelengths. The read out circuitry (30) has a wavelength selector for selecting between or combining read out signals of corresponding pixels of different optical filters (10). The invention further refers to an imaging system comprising such an integrated circuit and to a method of operating the imaging system to produce an output image by performing hyperspectral imaging.

公开(公告)号：EP3806152A1

公开(公告)日：2021-04-14

申请号：EP19202647.4

申请日：2019-10-11

Applicant: Imec VZW ,  Katholieke Universiteit Leuven, K.U.Leuven R&D

Inventor： SOUSSAN, Philippe ,  MOTSNYI, Vasyl ,  HASPESLAGH, Luc ,  GUERRIERI, Stefano ,  SYSHCHYK, Olga ,  KUNERT, Bernardette ,  LANGER, Robert

IPC: H01L27/146

Abstract: The present invent provides a method comprising forming (101) a first wafer (10) comprising a first substrate (11) of a group IV semiconductor, and a group III-V semiconductor device structure (12) formed by selective area epitaxial growth on a surface portion (13a) of a front side (13) of the first substrate (11). The method further comprises forming (102) a second wafer (20) comprising a second substrate (21) of a group IV semiconductor, and a group IV semiconductor device structure (22) formed on a front side (23) of the second substrate (21), and bonding (103) the first wafer (10) to the second wafer (20) with the front side (13) of the first substrate (11) facing the front side (23) of the second wafer (21).

公开(公告)号：EP2089311A2

公开(公告)日：2009-08-19

申请号：EP07847091.1

申请日：2007-10-31

Applicant: IMEC ,  ASML Netherlands B.V.

Inventor： WITVROUW, Ann ,  HASPESLAGH, Luc

IPC: B81C1/00

Abstract: The present invention provides a method for manufacturing micromachined devices on a substrate (10) comprising electrical circuitry, the micromachined devices comprising at least one micromachined structure, without affecting the underlying electrical circuitry. The method comprises providing a protection layer (15) on the substrate (10); providing on the protection layer (15) a plurality of patterned layers for forming the at least one micromachined structure, the plurality of patterned layers comprising at least one sacrificial layer (18); and thereafter removing at least a portion of the sacrificial layer (18) to release the at least one micromachined structure. The method furthermore comprises, before providing the protection layer (15), annealing the substrate (10) at a temperature higher than a highest temperature used during manufacturing of the micromachined device, annealing being for preventing gas formation underneath the protection layer (15) during subsequent manufacturing steps. The present invention also provides a micromachined device obtained by the method according to embodiments of the present invention.