公开(公告)号：EP3185300A1

公开(公告)日：2017-06-28

申请号：EP15201734.9

申请日：2015-12-21

申请人： IMEC VZW ,  Katholieke Universiteit Leuven

发明人： Verhulst, Anne S. ,  Verreck, Devin ,  Alian, AliReza

IPC分类号： H01L29/739

CPC分类号： H01L29/7835 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/41775 ,  H01L29/4234 ,  H01L29/42356 ,  H01L29/42364 ,  H01L29/7391 ,  H01L29/7831

摘要： A Tunnel Field-Effect Transistor (TFET 100) comprising a source-channel-drain structure, the source-channel-drain structure comprising a source region (102) doped with a dopant element having a first dopant type and a first doping concentration; a drain region (101) doped with a dopant element having a second dopant type opposite compared to the first dopant type, and a second doping concentration, a channel region (103) situated between the source region (102) and the drain region (101, 501) and having an intrinsic doping concentration, or lowly doped concentration being lower than the doping concentration of the source and drain regions, a gate stack (110) comprising a gate electrode (111) on a gate dielectric layer (112), the gate stack (110) covering at least part of the channel region (103) and extending at the source side up to at least an interface between the source region (102) and the channel region (103), a drain extension region (105) in the channel region (103) or on top thereof, the drain extension region (105) being formed from a material suitable for creating, and having a length / thickness ratio such that, in use, it creates a charged layer, in the OFF-state of the TFET, with a charge opposite to the charge of the majority carriers in the drain region.

摘要翻译： 一种包括源 - 沟道 - 漏极结构的隧道场效应晶体管（TFET 100），所述源 - 沟道 - 漏极结构包括掺杂有具有第一掺杂剂类型和第一掺杂浓度的掺杂剂元素的源极区域（102） 掺杂有具有与第一掺杂剂类型相反的第二掺杂剂类型的掺杂剂元素和第二掺杂浓度的漏极区（101），位于源极区（102）和漏极区（101）之间的沟道区（103） ，501），并且具有低于源极和漏极区的掺杂浓度的本征掺杂浓度或低掺杂浓度;包括在栅极电介质层（112）上的栅极电极（111）的栅极叠层（110）;所述 栅极叠层110覆盖沟道区103的至少一部分并且在源极侧延伸至源极区102和沟道区103之间的至少一个界面;漏极延伸区105， 在沟道区（103）中或在其顶部上，漏极延伸区（105）由适于产生的材料形成，并且具有长度/厚度比，使得在使用中其在OFF中产生带电层 - TFET的状态，与电荷o相反 f漏极区域的多数载流子。

公开(公告)号：EP3185301A1

公开(公告)日：2017-06-28

申请号：EP15201916.2

申请日：2015-12-22

申请人： IMEC VZW

发明人： Pourghaderi, Mohammad Ali ,  Alian, AliReza

IPC分类号： H01L29/739 ,  H01L29/49

CPC分类号： H01L29/7831 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/42376 ,  H01L29/4983 ,  H01L29/4991 ,  H01L29/512 ,  H01L29/7391

摘要： A Tunnel Field-Effect Transistor (TFET) is disclosed comprising a source-channel-drain structure of a semiconducting material. The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and a intrinsic or lowly doped channel region situated between the source region and the drain region. The TFET further comprises a reference gate structure covering the channel region and a source-side gate structure aside of the reference gate structure wherein the work function and/or electrostatic potential of the source-side gate structure and the reference work function and/or electrostatic potential of the reference gate structure are selected for allowing the tunneling mechanism of the TFET device in operation to occur at the interface or interface region between the source-side gate structure and the reference gate structure in the channel region.

摘要翻译： 公开了包括半导体材料的源 - 沟道 - 漏极结构的隧道场效应晶体管（TFET）。 源极 - 沟道 - 漏极结构包括n型或p型掺杂的源极区域，与源极区域相反掺杂的漏极区域以及位于源极区域和漏极区域之间的本征或低掺杂沟道区域。 所述TFET进一步包括参考栅极结构，所述参考栅极结构覆盖所述沟道区域和所述参考栅极结构旁边的源极侧栅极结构，其中所述源极侧栅极结构和所述参考功函数和/或静电的功函数和/或静电势 选择参考栅极结构的电势以允许操作中的TFET器件的隧穿机制发生在沟道区中的源极侧栅极结构与参考栅极结构之间的界面或界面区域处。