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公开(公告)号：EP2764553B1
公开(公告)日：2019-07-24
申请号：EP12768863.8
申请日：2012-10-05
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/18 , H01L31/061 , B23K26/40 , B23K26/361
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公开(公告)号：EP2826072A1
公开(公告)日：2015-01-21
申请号：EP13710360.2
申请日：2013-03-13
IPC分类号： H01L31/0224 , H01L31/0236
CPC分类号： H01L31/02327 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/186 , Y02E10/547
摘要： The disclosed technology relates generally to photovoltaic cells, and more particularly to photovoltaic cells with plated metal contacts. In one aspect, a method of fabricating a photovoltaic cell with a metal contact pattern on a surface of a semiconductor substrate includes locally smoothening portions of the surface of the semiconductor substrate by using a first laser, at predetermined locations. The method additionally includes doping the surface of the semiconductor substrate to form an emitter region. The method additionally includes forming a dielectric layer on the surface of the semiconductor substrate, and subsequently forming openings through the dielectric layer by using a second laser, thereby locally exposing the underlying surface of the semiconductor substrate at the predetermined locations. The method further includes forming metal contacts at exposed regions of the surface of the semiconductor substrate by plating.
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3.发明公开METHOD OF MANUFACTURING A SOLAR CELL WITH LOCAL BACK CONTACTS 审中-公开VERFAHREN ZUR HERSTELLUNG EINER SOLARZELLE MIT LOKALENRÜCKSEITIGENKONTAKTEN
公开(公告)号：EP2764553A1
公开(公告)日：2014-08-13
申请号：EP12768863.8
申请日：2012-10-05
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/18 , H01L31/061 , H01L21/268
CPC分类号： H01L31/022441 , B23K26/361 , B23K26/362 , B23K26/40 , B23K2103/172 , H01L31/02168 , H01L31/022425 , H01L31/061 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to the manufacturing process of a solar cell (1) with back contact and passivated emitter, comprising a dielectric stack (10) of at least two layers consisting of at least a first dielectric layer (11) made of AlOx or SiOx in contact with a p-type silicon layer (3), and a second dielectric layer (13) deposited on the first dielectric layer (11). Besides, the method of manufacturing comprising a formation step of at least one partial opening (15) preferably by laser ablation into the dielectric stack (10), sparing at least partially the aforementioned first dielectric layer.
摘要翻译： 本发明涉及具有背接触和钝化发射极的太阳能电池（1）的制造工艺，其包括由至少两层构成的至少两层的电介质叠层（10），所述至少两层由至少由AlO x或SiO x构成的第一电介质层 与p型硅层（3）接触，以及沉积在第一介电层（11）上的第二介电层（13）。 此外，制造方法包括优选通过激光烧蚀至少一个部分开口（15）的形成步骤到电介质堆叠（10）中，至少部分地保留上述第一介电层。
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公开(公告)号：EP2826072B1
公开(公告)日：2019-07-17
申请号：EP13710360.2
申请日：2013-03-13
IPC分类号： H01L31/0224 , H01L31/0236
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