METHOD FOR FABRICATING PHOTOVOLTAIC CELLS WITH PLATED CONTACTS
    2.
    发明公开
    METHOD FOR FABRICATING PHOTOVOLTAIC CELLS WITH PLATED CONTACTS 审中-公开
    用于生产光伏细胞复合联系

    公开(公告)号:EP2826072A1

    公开(公告)日:2015-01-21

    申请号:EP13710360.2

    申请日:2013-03-13

    IPC分类号: H01L31/0224 H01L31/0236

    摘要: The disclosed technology relates generally to photovoltaic cells, and more particularly to photovoltaic cells with plated metal contacts. In one aspect, a method of fabricating a photovoltaic cell with a metal contact pattern on a surface of a semiconductor substrate includes locally smoothening portions of the surface of the semiconductor substrate by using a first laser, at predetermined locations. The method additionally includes doping the surface of the semiconductor substrate to form an emitter region. The method additionally includes forming a dielectric layer on the surface of the semiconductor substrate, and subsequently forming openings through the dielectric layer by using a second laser, thereby locally exposing the underlying surface of the semiconductor substrate at the predetermined locations. The method further includes forming metal contacts at exposed regions of the surface of the semiconductor substrate by plating.

    PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON
    6.
    发明公开
    PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON 审中-公开
    结晶硅对太阳电池光接收表面钝化的研究

    公开(公告)号:EP3161874A1

    公开(公告)日:2017-05-03

    申请号:EP15812793.6

    申请日:2015-06-25

    摘要: Methods of passivating light-receiving surfaces of solar cells with crystalline silicon, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. One or both of the intrinsic silicon layer and the N-type silicon layer is a micro- or poly-crystalline silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type micro- or poly-crystalline silicon layer disposed on the passivating dielectric layer.

    摘要翻译: 描述了用晶体硅钝化太阳能电池的光接收表面的方法以及所得到的太阳能电池。 在一个示例中,太阳能电池包括具有光接收表面的硅基板。 本征硅层设置在硅衬底的光接收表面上方。 在本征硅层上设置N型硅层。 本征硅层和N型硅层中的一个或两个是微晶硅层或多晶硅层。 在另一个例子中,太阳能电池包括具有光接收表面的硅基板。 钝化介电层设置在硅衬底的光接收表面上。 设置在钝化介电层上的N型微晶硅或多晶硅层。

    PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH HIGH ENERGY GAP (EG) MATERIALS
    7.
    发明公开
    PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH HIGH ENERGY GAP (EG) MATERIALS 审中-公开
    太阳能电池的光接收表面与高能隙材料的钝化

    公开(公告)号:EP3161873A1

    公开(公告)日:2017-05-03

    申请号:EP15812315.8

    申请日:2015-06-25

    摘要: Methods of passivating light-receiving surfaces of solar cells with high energy gap (Eg) materials, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A Group III-nitride material layer is disposed above the passivating dielectric layer. In another example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A large direct band gap material layer is disposed above the passivating dielectric layer, the large direct band gap material layer having an energy gap (Eg) of at least approximately 3.3. An anti-reflective coating (ARC) layer disposed on the large direct band gap material layer, the ARC layer comprising a material different from the large direct band gap material layer.

    摘要翻译: 负债的方法廷太阳能电池具有高能量隙(Eg)的材料,并且将所得的太阳能电池的光接收表面上,进行了描述。 在一个例子中,太阳能电池包括具有受光面一个基材。 钝化介电层是在开始设置在所述基板的光接收表面上。 A组III族氮化物材料层的负债廷介电层上方。 在另一实施例中,太阳能电池包括具有受光面一个基材。 钝化介电层是在开始设置在所述基板的光接收表面上。 大的直接带隙材料层的负债的正上方婷电介质层,具有在至少约3.3能隙(Eg)大的直接带隙材料层。 抗反射涂层(ARC)层设置在大的直接带隙材料层上,所述ARC层包括从所述大的直接带隙材料层的材料不同。

    MATRICE DE DEPOT D'AU MOINS UN FLUIDE CONDUCTEUR SUR UN SUBSTRAT, AINSI QUE DISPOSITIF COMPRENANT CETTE MATRICE ET PROCEDE DE DEPOT
    9.
    发明公开
    MATRICE DE DEPOT D'AU MOINS UN FLUIDE CONDUCTEUR SUR UN SUBSTRAT, AINSI QUE DISPOSITIF COMPRENANT CETTE MATRICE ET PROCEDE DE DEPOT 有权
    喷嘴将至少一种导电流体至基底上,设备符合这样的矩阵和应用过程

    公开(公告)号:EP2844485A1

    公开(公告)日:2015-03-11

    申请号:EP13719828.9

    申请日:2013-04-26

    IPC分类号: B41J2/14

    摘要: The invention relates to a die for depositing a conductive fluid onto a substrate, including a structure (11) for supporting at least one fluid (13) which is conductive and the viscosity of which sensitive to the radiation from a light source (5), in order to deposit said fluid (13) onto a substrate (3) so as to form conductive contacts or tracks on the substrate (3). The support structure (11) includes at least one tank (17) for said conductive fluid, the bottom wall (19) of which is to be arranged opposite said substrate (3) during the deposition, and said bottom wall (19) has perforations for enabling the flow (18) of said conductive fluid (13) onto the substrate (3) when said fluid (13) is subjected to the radiation (15) from said light source (5), wherein the perforations are formed according to a pattern of the fluid to be deposited onto the substrate (3). The die (7) further comprises an optical plate (9) having a pattern (30) pervious to the radiation from said light source (5), the optical plate (9) being impervious to the radiation from said light source (5) outside said pattern (30), while the pattern (30) pervious to the radiation from said light source on said optical plate (9) corresponds to a pattern covering the pattern (22) of the perforations of said support structure.

    摘要翻译: 本发明涉及的模具用于沉积导电流体喷射到基板,包括结构(11),用于支撑至少一个流体(13),所有这些是导电的,并且其中的所述辐射敏感来自光源的粘度(5) 为了沉积所述流体(13)到基片(3),以在基板上形成导电触点或迹线(3)。 所述支撑结构(11)包括用于所有所述导电流体,该底壁(19),其是要被相对布置在所述基片(3)在沉积过程中,和所述底壁(19)具有穿孔,至少一个罐(17) 用于使所述导电流体(13)的流动(18)到基片(3)当所述流体(13)进行从所述光源(5),worin穿孔形成雅丁所涉及的放射线(15) 的流体的图案到基片上沉积(3)。 所述模具(7)(9),其具有的图案(30)可透过从放射线所述光源(5),该光学板(9)不透来自所述光源的辐射(5)外侧的光学板的步骤还包括 所述图案(30),而图案(30)透过的,以从所述光源上,所述光学板(9)的辐射对应于覆盖所述支撑结构的所述穿孔的图案(22)的图案。