摘要:
The disclosed qubit device (200) comprises two linear qubit arrays (101, 102), each comprising a semiconductor substrate layer (110), a set of control gates (112, 114, 116) configured to define a single row of electrostatically confined quantum dots (122), each quantum dot (122) being suitable for holding a qubit, and a set of nanomagnets (124) with out-of-plane magnetization distributed along the row of quantum dots such that a nanomagnet is arranged at every other pair of quantum dots (122a). The device further comprises a set (211) of superconducting resonators (210) connecting corresponding pairs of quantum dots (122a, 122b) of the first array (101) and second array (102).
摘要:
A digitally controlled variable gain amplifier (1) or digitally controlled VGA (1) for generating amplification output levels (10), comprising: - a positive amplification stage (100) comprising at least two positive amplifiers (101;102); - a corresponding negative amplification stage (200) coupled to said positive amplification stage (100), wherein said corresponding negative amplification stage (200) comprises at least two negative amplifiers (201; 202); wherein said positive amplification stage (100) and said corresponding negative amplification stage (200) are digitally controlled by one or more digital codes (240); and wherein: - said corresponding negative amplification stage (200) is coupled in parallel with said positive amplification stage (100) and is equally weighted as said positive amplification stage (100); and - both said positive amplification stage (100) and said corresponding negative amplification stage (200) selectively contribute to the generation of said amplification output levels (10) for said digitally controlled VGA (1).
摘要:
A millimeter or microwave oscillator device for a receiver or a transmitter is described comprising: a high frequency oscillating circuit including an active device 41, said active device 41 having a first and a second contact 56, 52, a signal line 49 of said oscillator device 41 being connected to said first contact 56 for connection to a load circuit 43, a biasing circuit 47 for said active device, and a low frequency oscillation suppression circuit, wherein said low frequency oscillation suppression circuit includes a decoupling capacitor 45 and one electrode of said decoupling capacitor 45 is connected to said second contact 52. A manufacturing method for the oscillator device is also disclosed.