摘要:
According to one embodiment of the present invention, there is a high frequency circuit having a multi-chip module structure, including a semiconductor substrate set formed with discrete transistors connected in series, a first dielectric substrate set formed with capacitors, and a second dielectric substrate set formed with strip lines.
摘要:
Certain embodiments provide a millimeter wave bands semiconductor device including a metal base body, a circuit board, and a metal cover body. The base body has a first penetration hole and a second penetration hole. The circuit board is disposed on the base body and has an input signal line and an output signal line on a front side surface thereof. The cover body is disposed on the circuit board and has a first non-penetration hole and a second non-penetration hole. The cover body is disposed such that the first non-penetration hole is disposed directly above the first penetration hole of the base body and the second non-penetration hole is disposed directly above the second penetration hole of the base body. Further, the first non-penetration hole and the first penetration hole constitute a first waveguide and the second non-penetration hole and the second penetration hole constitute a second waveguide.
摘要:
A high-frequency circuit package including a dielectric substrate (10); a signal line (31), a first ground conductor layer (32), a second ground conductor layer (33), and a frame-shaped dielectric layer (16) formed on the dielectric substrate; a fourth ground conductor layer (35) formed on the frame-shaped dielectric layer; a first recess (29) formed in the frame-shaped dielectric layer and including a first (29b) surface and a second surface (29c) that are located above the first ground conductor layer (32) and the second ground conductor layer (33) and extend laterally at an oblique angle with respect to the length direction of the signal line; a first ground line (38a) formed on the first surface and electrically connecting the second ground conductor layer (33) with the fourth ground conductor layer (35); and a second ground line (38b) formed on the second surface and electrically connecting the third ground conductor layer (34) with the fourth ground conductor layer (35).
摘要:
A device housing package (1) includes a substrate (3) having a device (2) mounting region (R) in an upper face thereof; and a frame body (4) having a through hole (H) formed in part thereof, the frame body being disposed on the substrate (3) so as to lie along a periphery of the device mounting region (R). The device housing package (1) includes an input-output terminal (5) disposed in the through hole (H), the input-output terminal having a first dielectric layer (7) extending interiorly and exteriorly of the frame body (4); a signal line (8) formed on the first dielectric layer (7) and configured to provide electrical connection between an interior of the frame body (4) and an exterior thereof; a first ground layer (9a) formed on a lower face of the first dielectric layer (7); a second dielectric layer (10) formed on the signal line (8) so as to overlap the frame body (4) as viewed in a transparent plan view; a second ground layer (9b) formed on an upper face of the second dielectric layer (10); and a metal layer (11) disposed within the second dielectric layer (10) so as to extend from the interior of the frame body (4) to the exterior thereof along the signal line (8). The metal layer (11) is formed to extend from the second dielectric layer (10) to the first dielectric layer (7), being separated from the signal line (8).
摘要:
A ramp-stack chip package is described. This chip package includes a vertical stack of semiconductor dies or chips that are offset from each other in a horizontal direction, thereby defining a stepped terrace. A high-bandwidth ramp component, which is positioned approximately parallel to the stepped terrace, is mechanically coupled to the semiconductor dies. Furthermore, the ramp component includes an optical waveguide that conveys the optical signal, and an optical coupling component that optically couples the optical signal to one of the semiconductor dies, thereby facilitating high-bandwidth communication of the optical signal between the semiconductor die and the ramp component.
摘要:
A method (200) of designing a packaged integrated circuit (100), wherein the method comprises determining (202) an electric model of the packaged integrated circuit (100), analyzing (206) a characteristic of a transmission of an electric signal by the packaged integrated circuit (100) based on the electric model, and modifying (210) the packaged integrated circuit (100) based on a result of the analyzing (206) for reducing discontinuities of a characteristic impedance of the packaged integrated circuit (100).
摘要:
An interposer with which the manufacturing steps are able to be simplified and which shows superior high frequency characteristics is provided. The interposer includes: a substrate having a front face and a rear face; a wiring that is formed on the front face side of the substrate and is electrically connected to a semiconductor chip; an electric device connected to the wiring; and a concave section that is formed from the rear face side of the substrate in a position corresponding to the electric device.
摘要:
An electronic device carrier (110) adapted for transmitting high-frequency signals, including a circuitized substrate with a plurality of conductive layers (240a to 240g) insulated from each other, the conductive layers being arranged in a sequence from a first one of the conductive layers (240a) wherein a plurality of signal tracks (200) each one ending with a contact area (205) for transmitting a high-frequency signal are formed, and a reference structure (215a, 215b, 230) connectable to a reference voltage or ground for shielding the signal tracks the reference structure includes at least one reference track (230) formed in a second one of the conductive layers (240b) adjacent to the first conductive layer and at least one further reference track formed in one of the conductive layers (240d) different from the first and second conductive layer, a portion of each signal track excluding at least the area corresponding to the orthographic projection of associated contact area being superimposed in plan view to a corresponding reference track and at least a part of the area corresponding to the orthographic projection of the contact area associated to each signal track being superimposed in plan view to a corresponding further reference track with interposition of a floating conductive track, i.e. a track not connected to any signal, reference voltage or ground track.