Millimeter wave bands semiconductor device
    2.
    发明公开
    Millimeter wave bands semiconductor device 有权
    毫米波段半导体器件

    公开(公告)号:EP2911236A1

    公开(公告)日:2015-08-26

    申请号:EP14177873.8

    申请日:2014-07-21

    发明人: Takagi, Kazutaka

    IPC分类号: H01P5/107 H01L23/66

    摘要: Certain embodiments provide a millimeter wave bands semiconductor device including a metal base body, a circuit board, and a metal cover body. The base body has a first penetration hole and a second penetration hole. The circuit board is disposed on the base body and has an input signal line and an output signal line on a front side surface thereof. The cover body is disposed on the circuit board and has a first non-penetration hole and a second non-penetration hole. The cover body is disposed such that the first non-penetration hole is disposed directly above the first penetration hole of the base body and the second non-penetration hole is disposed directly above the second penetration hole of the base body. Further, the first non-penetration hole and the first penetration hole constitute a first waveguide and the second non-penetration hole and the second penetration hole constitute a second waveguide.

    摘要翻译: 某些实施例提供了一种毫米波段半导体器件,其包括金属基体,电路板和金属盖体。 基体具有第一贯穿孔和第二贯穿孔。 电路板设置在基体上并且在其前侧表面上具有输入信号线和输出信号线。 盖体设置于电路板上并具有第一非贯穿孔及第二非贯穿孔。 盖体被配置为,第一非贯通孔配置在基体的第一贯通孔的正上方,第二非贯通孔配置在基体的第二贯通孔的正上方。 此外,第一非贯通孔和第一贯通孔构成第一波导,第二非贯通孔和第二贯通孔构成第二波导。