公开(公告)号：EP2681658A4

公开(公告)日：2017-01-11

申请号：EP11860580

申请日：2011-12-21

申请人： INTEL CORP

发明人： CARTER NICHOLAS P ,  HANNAH ERIC C ,  NAEIMI HELIA ,  HAYCOCK MATTHEW B ,  GARDNER DONALD S ,  BORKAR SHEKHAR Y

IPC分类号： G06F11/28 ,  G06F11/07 ,  G06F11/22

CPC分类号： G06F11/0781 ,  G06F11/0772 ,  G06F11/0793 ,  G06F11/1425 ,  G06F11/1428

公开(公告)号：EP3198603A4

公开(公告)日：2018-05-30

申请号：EP15843190

申请日：2015-08-26

申请人： INTEL CORP

发明人： NAEIMI HELIA ,  LU SHIH-LIEN L ,  TOMISHIMA SHIGEKI

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673

摘要： In one embodiment, a magnetoresistance random access memory (MRAM) such as a spin transfer torque (STT) random access memory (RAM), for example, has a subarray of bitcells and an electro-magnet positioned adjacent the subarray. A magnetic field is directed through a ferromagnetic device of bitcells of the first subarray to assist in the changing of states of bitcells of the subarray from a first state to a second state in which the ferromagnetic device of the bitcell is changed from one of parallel and anti-parallel polarization to the other of parallel and anti-parallel polarization. Accordingly, the content of the subarray may be readily preset or erased to one of the parallel or anti-parallel state with assistance from an electro-magnet. During a normal write operation, the bits to the other state are written. Other aspects are described herein.

公开(公告)号：EP3111449A4

公开(公告)日：2017-10-25

申请号：EP15755970

申请日：2015-02-02

申请人： INTEL CORP

发明人： NAEIMI HELIA ,  LU SHIH-LIEN ,  AUGUSTINE CHARLES

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C7/1009 ,  G11C11/1657