公开(公告)号：EP4439675A2

公开(公告)日：2024-10-02

申请号：EP23214822.1

申请日：2023-12-07

申请人： INTEL Corporation

发明人： KOH, Shao-Ming ,  MORROW, Patrick ,  MEHTA, Nikhil ,  GULER, Leonard ,  NASKAR, Sudipto ,  DAVIS, Alison ,  LAVRIC, Dan ,  PRINCE, Matthew ,  LUCE, Jeanne ,  WALLACE, Charles ,  VOGELSBERG, Cortnie ,  PAI, Rajaram ,  KILROY, Caitlin ,  AMONOO, Jojo ,  PURSEL, Sean ,  GOTLIB, Yulia

IPC分类号： H01L29/423 ,  H01L29/775 ,  H01L29/06

CPC分类号： H01L29/775 ,  H01L29/0673 ,  H01L29/42376

摘要： Transistor structures comprising a gate electrode, or "gate," that is self-aligned to underlying channel material. A mask material employed for patterning the channel material is further employed to define a cap of mask material having a larger width that protects a portion of gate material during a gate etch. The cap is therefore self-aligned to the channel material so that an amount by which a gate material extends laterally beyond the channel material is ensured to be symmetrical about a centerline of the channel material.

公开(公告)号：EP4439675A3

公开(公告)日：2024-11-13

申请号：EP23214822.1

申请日：2023-12-07

申请人： INTEL Corporation

发明人： KOH, Shao-Ming ,  MORROW, Patrick ,  MEHTA, Nikhil ,  GULER, Leonard ,  NASKAR, Sudipto ,  DAVIS, Alison ,  LAVRIC, Dan ,  PRINCE, Matthew ,  LUCE, Jeanne ,  WALLACE, Charles ,  VOGELSBERG, Cortnie ,  PAI, Rajaram ,  KILROY, Caitlin ,  AMONOO, Jojo ,  PURSEL, Sean ,  GOTLIB, Yulia

IPC分类号： H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06

摘要： Transistor structures comprising a gate electrode, or "gate," that is self-aligned to underlying channel material. A mask material employed for patterning the channel material is further employed to define a cap of mask material having a larger width that protects a portion of gate material during a gate etch. The cap is therefore self-aligned to the channel material so that an amount by which a gate material extends laterally beyond the channel material is ensured to be symmetrical about a centerline of the channel material.