公开(公告)号：EP4141921A3

公开(公告)日：2023-05-17

申请号：EP22186480.4

申请日：2022-07-22

申请人： INTEL Corporation

发明人： RADOSAVLJEVIC, Marko ,  JUN, Kimin ,  THEN, Han Wui ,  FISCHER, Paul ,  THOMAS, Nicole ,  NORDEEN, Paul ,  HOFF, Thomas ,  KOIRALA, Pratik ,  TALUKDAR, Tushar

IPC分类号： H01L21/8258 ,  H01L21/02 ,  H01L27/085 ,  H01L27/06

摘要： Gallium nitride (GaN) epitaxy on patterned substrates for integrated circuit technology is described. In an example, an integrated circuit structure includes a material layer (106B) including gallium and nitrogen, the material layer having a first side and a second side opposite the first side. A plurality of fins is on the first side of the material layer, the plurality of fins (104) including silicon. A device layer (108) is on the second side of the material layer, the device layer including one or more GaN-based devices.

公开(公告)号：EP4141921A2

公开(公告)日：2023-03-01

申请号：EP22186480.4

申请日：2022-07-22

申请人： INTEL Corporation

发明人： RADOSAVLJEVIC, Marko ,  JUN, Kimin ,  THEN, Han Wui ,  FISCHER, Paul ,  THOMAS, Nicole ,  NORDEEN, Paul ,  HOFF, Thomas ,  KOIRALA, Pratik ,  TALUKDAR, Tushar

IPC分类号： H01L21/8258 ,  H01L21/02 ,  H01L27/085 ,  H01L27/06

摘要： Gallium nitride (GaN) epitaxy on patterned substrates for integrated circuit technology is described. In an example, an integrated circuit structure includes a material layer (106B) including gallium and nitrogen, the material layer having a first side and a second side opposite the first side. A plurality of fins is on the first side of the material layer, the plurality of fins (104) including silicon. A device layer (108) is on the second side of the material layer, the device layer including one or more GaN-based devices.

公开(公告)号：EP4152391A3

公开(公告)日：2023-06-14

申请号：EP22191152.2

申请日：2022-08-19

申请人： INTEL Corporation

发明人： THEN, Han Wui ,  RADOSAVLJEVIC, Marko ,  DASGUPTA, Sansaptak ,  FISCHER, Paul B. ,  HAFEZ, Walid M. ,  THOMAS, Nicole K. ,  NAIR, Nityan ,  KOIRALA, Pratik ,  NORDEEN, Paul ,  TALUKDAR, Tushar ,  HOFF, Thomas ,  MICHAELOS, Thoe

IPC分类号： H01L27/092 ,  H01L21/8258 ,  H01L27/06 ,  H01L21/8252 ,  H01L29/778 ,  H01L29/04 ,  H01L29/20 ,  H01L29/08 ,  H01L29/423

摘要： An integrated circuit structure includes a substrate (102D) including silicon. A first layer (116D) including gallium and nitrogen is over a first region of the substrate, the first layer having a gallium-polar orientation with a top crystal plane consisting of a gallium face. A second layer (124D) including gallium and nitrogen is over a second region of the substrate, the second layer having a nitrogen-polar orientation with a top crystal plane consisting of a nitrogen face.

公开(公告)号：EP4152391A2

公开(公告)日：2023-03-22

申请号：EP22191152.2

申请日：2022-08-19

申请人： INTEL Corporation

发明人： THEN, Han Wui ,  RADOSAVLJEVIC, Marko ,  DASGUPTA, Sansaptak ,  FISCHER, Paul B. ,  HAFEZ, Walid M. ,  THOMAS, Nicole K. ,  NAIR, Nityan ,  KOIRALA, Pratik ,  NORDEEN, Paul ,  TALUKDAR, Tushar ,  HOFF, Thomas ,  MICHAELOS, Thoe

IPC分类号： H01L27/092 ,  H01L21/8258 ,  H01L27/06 ,  H01L21/8252 ,  H01L29/778 ,  H01L29/04 ,  H01L29/20 ,  H01L29/08 ,  H01L29/423

摘要： An integrated circuit structure includes a substrate (102D) including silicon. A first layer (116D) including gallium and nitrogen is over a first region of the substrate, the first layer having a gallium-polar orientation with a top crystal plane consisting of a gallium face. A second layer (124D) including gallium and nitrogen is over a second region of the substrate, the second layer having a nitrogen-polar orientation with a top crystal plane consisting of a nitrogen face.