公开(公告)号：EP0903776A2

公开(公告)日：1999-03-24

申请号：EP98306005.4

申请日：1998-07-28

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SIEMENS AKTIENGESELLSCHAFT

发明人： Ajmera, Atul C. ,  Dehm, Christine ,  Domenicucci, Anthony G. ,  Gifford, George G. ,  Loh, Stephen K. ,  Parks, Christopher ,  Sardesai, Viraji Y.

IPC分类号： H01L21/28 ,  H01L29/49

CPC分类号： H01L21/28061 ,  H01L29/4933

摘要： A "porous barrier" is formed without formation of a discrete barrier layer by enriching grain boundaries of a body of polysilicon with nitrogen to inhibit thermal mobility of silicon species therealong. In a polycide gate/interconnect structure, the reduced mobility of silicon suppresses agglomeration of silicon in a metal silicide layer formed thereon. Since silicon agglomeration is a precursor of a polycide inversion phenomenon, polycide inversion which can pierce an underlying oxide and cause device failure is effectively avoided. The increased thermal stability of polycide structures and other structures including a body of polysilicon thus increases the heat budget that can be withstood by the structure and increases the manufacturing process window imposed by the presence of polysilicon which can be exploited in other processes such as annealing to develop a low resistance phase of refractory metal silicide included in the polycide structure, drive-in annealing for formation of source/drain regions of field effect transistors and the like.

摘要翻译： 通过用氮富集多晶硅体的晶界而形成不形成离散阻挡层的“多孔阻挡层”，从而抑制硅物质的热迁移率。 在多晶硅栅极/互连结构中，硅的迁移率降低抑制了在其上形成的金属硅化物层中的硅的聚集。 由于硅团聚是多偶合反转现象的前体，因此有效地避免了可以刺穿下面的氧化物并导致器件故障的多偶极反转。 因此，多晶硅结构和包括多晶硅体在内的其他结构的热稳定性的增加，因此增加了可被该结构承受的热量预算，并且增加了由多晶硅的存在施加的制造工艺窗口，这可以在其它工艺中被利用，例如退火 开发包括在多晶硅结构中的难熔金属硅化物的低电阻相，用于形成场效应晶体管的源极/漏极区域的驱动退火等。

公开(公告)号：EP0817251A1

公开(公告)日：1998-01-07

申请号：EP97304053.8

申请日：1997-06-11

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Ajmera, Atul C. ,  Gambino, Jeffrey P. ,  Nguyen, Son Van

IPC分类号： H01L21/3105 ,  H01L21/316

CPC分类号： H01L21/02271 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02211 ,  H01L21/31051 ,  H01L21/31625

摘要： A process is provided for the low temperature deposition of a thin film of borophosphosilicate glass (BPSG) for use in semiconductor devices, such as DRAMs. The process includes utilizing R-OH groups as reagents to provide additional -OH groups so that an intermediate {Si(OH) 4 } n is formed having superior reflow properties, allowing the annealing and reflow steps to occur at temperatures less than 750°C, which is the current processing temperature.

摘要翻译： 提供了用于半导体器件（例如DRAM）中的硼磷硅玻璃（BPSG）薄膜的低温沉积的工艺。 该方法包括使用R-OH基团作为试剂以提供额外的-OH基团，从而形成具有优异回流性能的中间体äSi（OH）4ün，使退火和回流步骤在低于750℃的温度下发生， 当前加工温度。

公开(公告)号：EP0903776A3

公开(公告)日：1999-08-11

申请号：EP98306005.4

申请日：1998-07-28

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SIEMENS AKTIENGESELLSCHAFT

发明人： Ajmera, Atul C. ,  Dehm, Christine ,  Domenicucci, Anthony G. ,  Gifford, George G. ,  Loh, Stephen K. ,  Parks, Christopher ,  Sardesai, Viraji Y.

IPC分类号： H01L21/28 ,  H01L29/49

CPC分类号： H01L21/28061 ,  H01L29/4933

摘要： A "porous barrier" is formed without formation of a discrete barrier layer by enriching grain boundaries of a body of polysilicon with nitrogen to inhibit thermal mobility of silicon species therealong. In a polycide gate/interconnect structure, the reduced mobility of silicon suppresses agglomeration of silicon in a metal silicide layer formed thereon. Since silicon agglomeration is a precursor of a polycide inversion phenomenon, polycide inversion which can pierce an underlying oxide and cause device failure is effectively avoided. The increased thermal stability of polycide structures and other structures including a body of polysilicon thus increases the heat budget that can be withstood by the structure and increases the manufacturing process window imposed by the presence of polysilicon which can be exploited in other processes such as annealing to develop a low resistance phase of refractory metal silicide included in the polycide structure, drive-in annealing for formation of source/drain regions of field effect transistors and the like.

摘要翻译： 通过用氮富集多晶硅体的晶界而形成不形成离散阻挡层的“多孔阻挡层”，从而抑制硅物质的热迁移率。 在多晶硅栅极/互连结构中，硅的迁移率降低抑制了在其上形成的金属硅化物层中的硅的聚集。 由于硅团聚是多偶合反转现象的前体，因此有效地避免了可以刺穿下面的氧化物并导致器件故障的多偶极反转。 因此，多晶硅结构和包括多晶硅体在内的其他结构的热稳定性的增加，因此增加了可被该结构承受的热量预算，并且增加了由多晶硅的存在施加的制造工艺窗口，这可以在其它工艺中被利用，例如退火 开发包括在多晶硅结构中的难熔金属硅化物的低电阻相，用于形成场效应晶体管的源极/漏极区域的驱动退火等。

公开(公告)号：EP0903776B1

公开(公告)日：2006-10-11

申请号：EP98306005.4

申请日：1998-07-28

申请人： International Business Machines Corporation ,  SIEMENS AKTIENGESELLSCHAFT

发明人： Ajmera, Atul C. ,  Dehm, Christine ,  Domenicucci, Anthony G. ,  Gifford, George G. ,  Loh, Stephen K. ,  Parks, Christopher ,  Sardesai, Viraji Y.

IPC分类号： H01L21/28

CPC分类号： H01L21/28061 ,  H01L29/4933