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    FIBER LASER-BASED SYSTEM FOR UNIFORM CRYSTALLIZATION OF AMORPHOUS SILICON SUBSTRATE
    1.
    发明公开
    FIBER LASER-BASED SYSTEM FOR UNIFORM CRYSTALLIZATION OF AMORPHOUS SILICON SUBSTRATE 审中-公开
    基于纤维激光的非晶硅衬底均匀结晶体系

    公开(公告)号：EP3314633A1

    公开(公告)日：2018-05-02

    申请号：EP16818736.7

    申请日：2016-06-29

    申请人： IPG Photonics Corporation

    发明人： LEONARDO, Manuel ,  VON DADELSZEN, Michael ,  EROKHIN, Yuri

    IPC分类号： H01L21/268 ,  H01L21/324 ,  H01L21/02

    CPC分类号： H01L21/02691 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686

    摘要： A system for crystallizing amorphous Si (a-Si) panels by partial melt laser annealing (LA) or sequential lateral sol idi ficat ions (SLS) annealing process is provided. The system comprises at least one single transverse mode (SM) quasi -cont inuous wave (QCW) fiber laser source, emitting a pulsed harmonic beam; a beam conditioning assembly located downstream from the fiber laser source and configured to transform the harmonic beam such that the harmonic beam has desired divergence and spatial distribution characteristics; a beam velocity and profile assembly operative to provide the conditioned harmonic beam with a desired intensity profile at a desired scanning velocity in an object plane; a beam imaging assembly for imaging the conditioned harmonic beam in the object plane onto an image plane in at least one beam axis at a desired demagni ficat ion such that a width of the conditioned harmonic beam is reduced to a narrow linewidth; and a panel handling assembly operative to provide relative position and velocity between the imaged narrow linewidth beam and the panel such as to irradiate each location of the a-Si panel at least two times with an exposure time.