公开(公告)号：EP1474826A1

公开(公告)日：2004-11-10

申请号：EP03739441.8

申请日：2003-01-23

申请人： Infineon Technologies AG

发明人： RUDOLPH, Uwe ,  SECK, Martin ,  TILKE, Armin

IPC分类号： H01L21/331 ,  H01L29/32

CPC分类号： H01L29/66272 ,  H01L29/1004 ,  H01L29/42304

摘要： The invention relates to a polysilicon bipolar transistor and to a method for producing the same. According to the inventive method for producing a base connection structure for a bipolar transistor, an etch-stop layer (12) is applied to a monocrystalline semiconductor substrate (10), a polycrystalline base connection layer (14) is produced on the etch-stop layer (12), and an emitter window is etched in the base connection layer (14) while using the etch-stop layer (12) as an etch-stop.

公开(公告)号：EP1407484A2

公开(公告)日：2004-04-14

申请号：EP02753085.6

申请日：2002-07-10

申请人： Infineon Technologies AG

发明人： KRIZ, Jakob ,  SECK, Martin ,  TILKE, Armin

IPC分类号： H01L21/331 ,  H01L29/737

CPC分类号： H01L29/66272 ,  H01L21/2257

摘要： The invention relates to a method for producing a bipolar transistor comprising a polysilicon emitter, according to which a collector region (12) of a first conductivity type and an adjacent base region (14) of a second conductivity type are created. At least one layer (16) consisting of an insulating material is then applied, said layer or layers being structured in such a way that at least one section of the base region (14) is exposed. A layer consisting of a polycrystalline semiconductor material of the first conductivity type, which is highly doped with doping atoms, is subsequently created, in such a way that the exposed section is essentially covered. A second layer (20) consisting of a highly conductive material is then created on the layer (18) consisting of the polycrystalline semiconductor material, forming a dual-layer emitter with the latter. At least one portion of the doping atoms of the first conductivity type of the highly doped polycrystalline semiconductor layer is then caused to diffuse into the base region (14), to create an emitter region (22) of the first conductivity type.

公开(公告)号：EP1741133B1

公开(公告)日：2011-07-20

申请号：EP05743044.9

申请日：2005-04-22

申请人： Infineon Technologies AG

发明人： DAHL, Claus ,  TILKE, Armin

IPC分类号： H01L21/8249

CPC分类号： H01L21/8249 ,  H01L29/66242

摘要： The invention relates to a method for producing a planar spacer, an associated bipolar transistor and an associated biCMOS circuit arrangement, wherein the first and second spacer layers (3, 4) are formed on a substrate (1) after a sacrifice mask (2) is formed and first and second spacer layers (3, 4) are embodied. In order to produce auxiliary spacers (4S) on the second spacer layer (4), a first anisotropic etching process is carried out. Afterwards, a second anisotropic etching process is carried out by means of the auxiliary spacers (4S) for producing a planar spacer (PS), thereby making it possible to freely select the height of the thus produced planar spacer (PS), wherein the planarity thereof very much simplifies the continuation of the process. The inventive method makes it possible to produce components exhibiting improved electric properties.

公开(公告)号：EP1741133A1

公开(公告)日：2007-01-10

申请号：EP05743044.9

申请日：2005-04-22

申请人： Infineon Technologies AG

发明人： DAHL, Claus ,  TILKE, Armin

IPC分类号： H01L21/8249

CPC分类号： H01L21/8249 ,  H01L29/66242

摘要： The invention relates to a method for producing a planar spacer, an associated bipolar transistor and an associated biCMOS circuit arrangement, wherein the first and second spacer layers (3, 4) are formed on a substrate (1) after a sacrifice mask (2) is formed and first and second spacer layers (3, 4) are embodied. In order to produce auxiliary spacers (4S) on the second spacer layer (4), a first anisotropic etching process is carried out. Afterwards, a second anisotropic etching process is carried out by means of the auxiliary spacers (4S) for producing a planar spacer (PS), thereby making it possible to freely select the height of the thus produced planar spacer (PS), wherein the planarity thereof very much simplifies the continuation of the process. The inventive method makes it possible to produce components exhibiting improved electric properties.

公开(公告)号：EP1474826B1

公开(公告)日：2006-11-02

申请号：EP03739441.8

申请日：2003-01-23

申请人： Infineon Technologies AG

发明人： RUDOLPH, Uwe ,  SECK, Martin ,  TILKE, Armin

IPC分类号： H01L21/331 ,  H01L29/32

CPC分类号： H01L29/66272 ,  H01L29/1004 ,  H01L29/42304

摘要： The invention relates to a polysilicon bipolar transistor and to a method for producing the same. According to the inventive method for producing a base connection structure for a bipolar transistor, an etch-stop layer (12) is applied to a monocrystalline semiconductor substrate (10), a polycrystalline base connection layer (14) is produced on the etch-stop layer (12), and an emitter window is etched in the base connection layer (14) while using the etch-stop layer (12) as an etch-stop.