公开(公告)号：EP2671260A2

公开(公告)日：2013-12-11

申请号：EP12706653.8

申请日：2012-01-30

申请人： Institut Polytechnique de Grenoble ,  Centre National de la Recherche Scientifique

发明人： CHICHIGNOUD, Guy ,  BLANQUET, Elisabeth ,  GELARD, Isabelle ,  JIMENEZ, Carmen ,  SARIGIANNIDOU, Eirini ,  ZAIDAT, Kader ,  WEISS, François ,  PONS, Michel

IPC分类号： H01L31/0236 ,  H01L31/0392 ,  H01L31/18 ,  C22C38/08 ,  C23C16/02 ,  C23C16/24 ,  H01L31/042

CPC分类号： H01L31/03685 ,  C23C16/0272 ,  C23C16/24 ,  H01L31/0236 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： The invention relates to a structure adapted for the formation of solar cells, comprising the following successive elements, namely: a sheet (1) of textured metal with crystal grains having an average size greater than 50 µm, said sheet being adapted to form a rear face electrode of the cells; a diffusion barrier layer (2) having a thickness of between 0.2 and 2 µm, made from an electrically conductive material with crystal grains having an average size greater than 50 µm; and a doped multicrystalline silicon layer (3) having a thickness of between 30 and 100 µm, with crystal grains having an average size greater than 50 to 100 µm, in which the average diffusion length of the carriers is greater than 50 µm.