公开(公告)号：EP3345206A1

公开(公告)日：2018-07-11

申请号：EP16758167.7

申请日：2016-08-30

Applicant: Total S.A. ,  Ecole Polytechnique ,  Centre National de la Recherche Scientifique

Inventor： JOHNSON, Erik ,  BRUNEAU, Bastien ,  ROCA I CABARROCAS, Pere ,  BULKIN, Pavel ,  HABKA, Nada

IPC: H01J37/32 ,  H01L31/18 ,  C23C14/04 ,  C23C16/509

CPC classification number: H01J37/32091 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/505 ,  H01J37/32366 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32816 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: The invention concerns a plasma generating apparatus, for manufacturing devices having patterned layers, comprising a first electrode assembly (1) and a second electrode assembly (2) placed in a plasma reactor chamber, an electrical power supply (6) for generating a voltage difference between the first electrode assembly (1) and the second electrode assembly (2). According to the invention, the second electrode assembly (2) is configured for receiving a substrate (5), and the first electrode assembly (1) comprises a plurality of protrusions (11) and a plurality of recesses (12, 13, 14, 15, 16, 17, 18), the protrusions (11) and recesses (12, 13, 14, 15, 16, 17, 18) being dimensioned and set at respective distances (D1, D2) from the surface (51) of the substrate (5) so as to generate a plurality of spatially isolated plasma zones (21, 22) located selectively either between said surface (51) of the substrate (5) and said plurality of recesses (12, 13, 14, 15, 16, 17, 18) or between said surface (51) of the substrate (5) and said plurality of protrusions (11).

公开(公告)号：EP2224495A4

公开(公告)日：2018-01-10

申请号：EP08856818

申请日：2008-12-05

Applicant: KANEKA CORP

Inventor： GOTO MASAHIRO ,  YOSHIDA WATARU ,  SASAKI TOSHIAKI

IPC: H01L31/0463 ,  H01L31/0465

CPC classification number: H01L31/03921 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/1884 ,  Y02E10/50

Abstract: Provided is an integrated-type thin film photoelectric converter having a high conversion characteristic which can be manufactured at a high productivity and a low cost. The integrated-type thin film photoelectric converter includes a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer and a transparent electrode layer, sequentially stacked on a translucent substrate. The laser light absorption layer is parted into a plurality of regions by first kind parting line grooves, and the photoelectric conversion layer is parted into a plurality of photoelectric conversion regions by third kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer and the photoelectric conversion layer. The transparent electrode layer is parted into a plurality of transparent electrode regions by fourth kind parting line grooves penetrating the laser light absorption layer the rear surface electrode layer, the photoelectric conversion layer and the transparent electrode layer. Between mutually adjacent photoelectric conversion cells, a back electrode region of one cell is electrically connected to a back electrode region of another cell through the first kind parting line groove, the transparent conductive layer and the third kind parting line groove. In Embodiment 1, the back electrode layer is divided into a plurality of back electrode regions by second kind parting line grooves penetrating the transparent conductive layer, the laser light absorption layer and the back electrode layer.

公开(公告)号：EP2405485A4

公开(公告)日：2017-07-26

申请号：EP10748626

申请日：2010-02-19

Applicant: KANEKA CORP

Inventor： YOSHIKAWA KUNTA ,  ICHIKAWA MITSURU ,  YAMAMOTO KENJI

IPC: H01L31/0465 ,  H01L31/0392 ,  H01L31/078

CPC classification number: H01L31/078 ,  H01L31/03921 ,  H01L31/03923 ,  H01L31/0465 ,  Y02E10/541 ,  Y02P70/521

公开(公告)号：EP3104420A1

公开(公告)日：2016-12-14

申请号：EP16182570.8

申请日：2007-02-09

Applicant: SunPower Corporation

Inventor： COUSINS, Peter John

IPC: H01L31/0747

CPC classification number: H01L31/02008 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/068 ,  H01L31/074 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/548 ,  Y02P70/521

Abstract: A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature processing is unnecessary in fabricating the solar cell.

Abstract translation: 硅太阳能电池已经在硅衬底的表面上形成在隧道氧化硅层上的掺杂非晶硅接触。 制造太阳能电池时不需要高温处理。

公开(公告)号：EP2141749B8

公开(公告)日：2016-12-07

申请号：EP09012804.2

申请日：2004-07-23

Applicant: Hamamatsu Photonics K.K.

Inventor： Shibayama, Katsumi

IPC: H01L31/0392 ,  H01L31/103 ,  H01L31/105 ,  H01L27/146

CPC classification number: H01L31/0392 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L31/0203 ,  H01L31/03921 ,  H01L31/103 ,  H01L31/105 ,  H01L2224/13 ,  H01L2924/19107 ,  Y02E10/50

公开(公告)号：EP2503602B1

公开(公告)日：2016-06-29

申请号：EP10831524.3

申请日：2010-11-15

Applicant: KANEKA CORPORATION

Inventor： KIKUCHI,Takashi ,  SUNAHIRO,Satoshi

IPC: H01L31/075 ,  C03C3/085

CPC classification number: H01L31/022466 ,  H01L31/022483 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/50

公开(公告)号：EP2945195A1

公开(公告)日：2015-11-18

申请号：EP13871194.0

申请日：2013-06-27

Applicant: University-Industry Cooperation Group of Kyung Hee University

Inventor： CHOI, Suk Ho ,  KIM, Sung ,  KIM, Chang Oh

IPC: H01L31/10

CPC classification number: H01L31/028 ,  H01L31/03921 ,  H01L31/0745 ,  Y02E10/547

Abstract: Provided is a photodetector including a graphene p-n homogeneous vertical-junction diode by evaluating photodetection characteristics of the manufactured graphene p-n vertical junction according to the amount of doping. The photodetector comprises a substrate and graphene having a p-n homogeneous vertical junction as a photodetection layer formed on the substrate, wherein the photodetection layer has a detectability of 10E11 (Jones) or higher within the range of 350nm to 1100nm, and first and second electrodes are formed on the photodetection layer.

Abstract translation: 通过根据掺杂量评估所制造的石墨烯p-n垂直结的光电探测特性，提供包括石墨烯p-n均匀垂直结二极管的光电探测器。 光检测器包括基板和具有pn均匀垂直结的石墨烯作为形成在基板上的光检测层，其中光检测层在350nm至1100nm范围内具有10E11（Jones）或更高的可检测性，并且第一和第二电极是 形成在光电探测层上。

公开(公告)号：EP2903032A1

公开(公告)日：2015-08-05

申请号：EP13841155.8

申请日：2013-09-27

Applicant: Kaneka Corporation

Inventor： MEGURO, Tomomi ,  YAMAMOTO, Kenji

IPC: H01L31/04 ,  H01L31/06

CPC classification number: H01L31/077 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/545 ,  Y02E10/548

Abstract: The thin-film photoelectric conversion device of the present invention includes: a transparent electroconductive film (4) having zinc oxide as a main component; a contact layer (5); a photoelectric conversion unit (6) having a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer in this order; and a back electrode layer (8), in this order, on one main surface of a substrate (2). The contact layer (5) has an intrinsic crystalline semiconductor layer (51) and a p-type crystalline semiconductor layer (52) in this order from the substrate (2) side, and the intrinsic crystalline semiconductor layer (51) of the contact layer (5) and the transparent electroconductive film (4) are in contact with each other. The p-type crystalline semiconductor layer (52) of the contact layer (5) is preferably a layer having as a main component a silicon alloy selected from the group consisting of a silicon oxide; a silicon nitride; and silicon carbide.

Abstract translation: 本发明的薄膜光电转换元件包括：以氧化锌为主要成分的透明导电膜（4） 接触层（5）; 具有p型半导体层，i型半导体层和n型半导体层的光电转换单元（6）。 和背面电极层（8），依次形成在基板（2）的一个主表面上。 接触层（5）从衬底（2）侧依次具有本征晶体半导体层（51）和p型晶体半导体层（52），并且接触层的本征结晶半导体层（51） （5）和透明导电膜（4）彼此接触。 接触层（5）的p型结晶半导体层（52）优选为主要成分为选自氧化硅的硅合金的层; 氮化硅; 和碳化硅。

公开(公告)号：EP2105972A3

公开(公告)日：2015-06-10

申请号：EP09003638.5

申请日：2009-03-12

Applicant: Semiconductor Energy Laboratory Co, Ltd.

Inventor： Yamazaki, Shunpei ,  Shimomura, Akihisa

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/075 ,  H01L21/762 ,  H01L31/072 ,  H01L31/20 ,  H01L31/0236

CPC classification number: H01L31/03921 ,  H01L21/76254 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/075 ,  H01L31/076 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: To provide a resource-saving photoelectric conversion device with excellent photoelectric conversion characteristics. Thin part of a single crystal semiconductor substrate, typically a single crystal silicon substrate, is detached to structure a photoelectric conversion device using a thin single crystal semiconductor layer, which is the detached thin part of the single crystal semiconductor substrate. The thin part of the single crystal semiconductor substrate is detached by a method in which a substrate is irradiated with ions accelerated by voltage, or a method in which a substrate is irradiated with a laser beam which makes multiphoton absorption occur. A so-called tandem-type photoelectric conversion device is obtained by stacking a unit cell including a non-single-crystal semiconductor layer over the detached thin part of the single crystal semiconductor substrate.

公开(公告)号：EP2405483A4

公开(公告)日：2013-08-28

申请号：EP09841142

申请日：2009-10-02

Applicant: MITSUBISHI HEAVY IND LTD

Inventor： MIYAHARA HIROOMI ,  YAMAGUCHI KENGO

IPC: H01L31/04 ,  H01L21/02 ,  H01L21/205 ,  H01L31/0392 ,  H01L31/076 ,  H01L31/18

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  H01L31/03921 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521