公开(公告)号：EP4102504A1

公开(公告)日：2022-12-14

申请号：EP22164365.3

申请日：2022-03-25

申请人： Intel Corporation

发明人： RAHMAN, Ahsanur ,  GULARTE, Richard M. ,  KOH, Hoon ,  HA, Chang Wan ,  MEYAARD, David ,  LIU, Liu ,  THIMMEGOWDA, Deepak

IPC分类号： G11C5/02 ,  G11C16/04 ,  G11C16/08 ,  H01L27/11548 ,  H01L27/11575 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11595

摘要： An embodiment of a memory device may include a full block memory array of a lower tile of 3D NAND string memory cells, a full block memory array of an upper tile of 3D NAND string memory cells, a first portion of a string driver circuit coupled to the full block memory array of the lower tile, a second portion of the string driver circuit coupled to the full block memory array of the upper tile, a first split block memory array of the lower tile coupled to the first portion of the string driver circuit, and a second split block memory array of the upper tile coupled to the second portion of the string driver circuit. Other embodiments are disclosed and claimed.