公开(公告)号：EP1697994B1

公开(公告)日：2009-11-25

申请号：EP04815678.0

申请日：2004-12-22

申请人： Intel Corporation

发明人： MURPHY, Anand ,  BOYANOV, Boyan ,  DATTA, Suman ,  DOYLE, Brian, S. ,  JIN, Been-Yih ,  YU, Shaofeng ,  CHAU, Robert

IPC分类号： H01L29/10 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L21/8234

CPC分类号： H01L29/1054 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/66636 ,  H01L29/7842 ,  H01L29/7848

公开(公告)号：EP1697994A1

公开(公告)日：2006-09-06

申请号：EP04815678.0

申请日：2004-12-22

申请人： Intel Corporation

发明人： MURPHY, Anand ,  BOYANOV, Boyan ,  DATTA, Suman ,  DOYLE, Brian, S. ,  JIN, Been-Yih ,  YU, Shaofeng ,  CHAU, Robert

IPC分类号： H01L29/10 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L21/8234

CPC分类号： H01L29/1054 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/66636 ,  H01L29/7842 ,  H01L29/7848

摘要： Various embodiments of the invention relates to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.