公开(公告)号：EP1565936B1

公开(公告)日：2013-09-18

申请号：EP03778020.2

申请日：2003-10-31

申请人： Intel Corporation

发明人： CHAU, Robert ,  BARLAGE, Douglas ,  JIN, Been-Yih

IPC分类号： H01L21/786 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/4908 ,  H01L29/458 ,  H01L29/66643 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S438/936

公开(公告)号：EP1639652B1

公开(公告)日：2013-01-23

申请号：EP03817697.0

申请日：2003-12-12

申请人： Intel Corporation

发明人： HARELAND, Scott ,  CHAU, Robert ,  DOYLE, Brian ,  DATTA, Suman ,  JIN, Been-Yih

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L29/785 ,  H01L29/1054 ,  H01L29/42384 ,  H01L29/66628 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7849

公开(公告)号：EP3273484B1

公开(公告)日：2019-10-02

申请号：EP17188513.0

申请日：2010-03-02

申请人： INTEL Corporation

发明人： PILLARISETTY, Ravi ,  HUDAIT, Mantu ,  JIN, Been-Yih ,  CHU-KUNG, Benjamin ,  CHAU, Robert

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/10 ,  H01L29/78

公开(公告)号：EP1449242A2

公开(公告)日：2004-08-25

申请号：EP03787307.2

申请日：2003-07-31

申请人： INTEL CORPORATION

发明人： JIN, Been-Yih ,  ARGHAVANI, Reza ,  CHAU, Robert

IPC分类号： H01L21/316

CPC分类号： H01L21/02488 ,  H01L21/02532 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/76256

摘要： A method and apparatus for producing a relatively thin, relatively uniform semiconductor layer which has improved carrier mobility. In an embodiment, a lattice-matched insulator layer is formed on a semiconductor substrate, and a lattice-matched semiconductor layer is formed on the insulator layer to form a relatively thin, relatively uniform semiconductor on insulator apparatus. In embodiments of the method and apparatus, energy band characteristics may be used to facilitate the extraction of the well-region minority carriers.

摘要翻译： 一种用于制造具有改善的载流子迁移率的相对薄的相对均匀的半导体层的方法和装置。 在一个实施例中，在半导体衬底上形成晶格匹配的绝缘体层，并且在绝缘体层上形成晶格匹配的半导体层，以形成相对薄的，相对均匀的绝缘体上半导体器件。 在该方法和装置的实施例中，可以使用能带特征来促进提取良好区域的少数载流子。

公开(公告)号：EP3273484A1

公开(公告)日：2018-01-24

申请号：EP17188513.0

申请日：2010-03-02

申请人： INTEL Corporation

发明人： PILLARISETTY, Ravi ,  HUDAIT, Mantu ,  JIN, Been-Yih ,  CHU-KUNG, Benjamin ,  CHAU, Robert

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/10 ,  H01L29/78

摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodimentsmay be described and claimed.

摘要翻译： 本文总体上描述了提供用于改善的并联传导的量子阱器件的设备和方法的实施例。 其他实施例可以被描述和要求保护。

公开(公告)号：EP1665349A2

公开(公告)日：2006-06-07

申请号：EP04784782.7

申请日：2004-09-23

申请人： INTEL CORPORATION

发明人： JIN, Been-Yih ,  DOYLE, Brian ,  HARELAND, Scott ,  DOCZY, Mark ,  METZ, Matthew ,  BOYANOV, Boyan ,  DATTA, Suman ,  KAVALIEROS, Jack ,  CHAU, Robert

IPC分类号： H01L21/20

CPC分类号： H01L29/66772 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76886 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78681

摘要： A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to expose the substrate; and forming a semiconductor material in the via and in the trench. An apparatus including a device substrate; a dielectric layer formed on a surface of the device substrate; and a device base formed on the dielectric layer including a crystalline structure derived from the device substrate.

公开(公告)号：EP1565936A2

公开(公告)日：2005-08-24

申请号：EP03778020.2

申请日：2003-10-31

申请人： INTEL CORPORATION

发明人： CHAU, Robert ,  BARLAGE, Douglas ,  JIN, Been-Yih

IPC分类号： H01L21/786 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/4908 ,  H01L29/458 ,  H01L29/66643 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  Y10S438/936

摘要： The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the narrow bandgap semiconductor film.

公开(公告)号：EP2409333B1

公开(公告)日：2018-06-06

申请号：EP10753854.8

申请日：2010-03-02

申请人： Intel Corporation

发明人： PILLARISETTY, Ravi ,  HUDAIT, Mantu ,  JIN, Been-Yih ,  CHU-KUNG, Benjamin ,  CHAU, Robert

IPC分类号： H01L29/78

CPC分类号： H01L29/66977 ,  H01L29/1083 ,  H01L29/161 ,  H01L29/365 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/7781

摘要： Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodimentsmay be described and claimed.

公开(公告)号：EP2513972A2

公开(公告)日：2012-10-24

申请号：EP10838069.2

申请日：2010-11-03

申请人： Intel Corporation

发明人： SHAH, Uday ,  CHU-KUNG, Benjamin ,  JIN, Been-Yih ,  PILLARISETTY, Ravi ,  RADOSAVLJEVIC, Marko ,  RACHMADY, Willy

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78 ,  H01L29/78696 ,  H01L2221/1094

摘要： The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming an isolated nanowire, wherein isolation structure adjacent the nanowire provides a substantially level surface for the formation of microelectronic structures thereon.

公开(公告)号：EP1697994B1

公开(公告)日：2009-11-25

申请号：EP04815678.0

申请日：2004-12-22

申请人： Intel Corporation

发明人： MURPHY, Anand ,  BOYANOV, Boyan ,  DATTA, Suman ,  DOYLE, Brian, S. ,  JIN, Been-Yih ,  YU, Shaofeng ,  CHAU, Robert

IPC分类号： H01L29/10 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L21/8234

CPC分类号： H01L29/1054 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/66636 ,  H01L29/7842 ,  H01L29/7848