摘要:
In an embodiment, a processor includes error correction code (ECC) circuitry to: receive a codeword comprising data bits and parity bits; generate, using a parity checking matrix H, a syndrome vector associated with the received codeword, where the parity-checking matrix H comprises a data segment comprising N data columns and a parity segment comprising K parity columns, where a total quantity of data columns in the data segment with even weight is equal to N+K-2 (K-1) +1; and detect an adjacent two bit error in the codeword based on a comparison of the syndrome vector to the parity checking matrix H. Other embodiments are described and claimed.
摘要:
In one embodiment, temperature dependent, multiple mode error correction in accordance with one aspect of this disclosure, is employed for a memory circuit containing arrays of memory cells. In one embodiment, a temperature sensor coupled to an array is configured to provide an output signal which is a function of the temperature of the array of memory cells. Multiple mode error correction code (ECC) logic having an input coupled to an output of the temperature sensor, is configured to encode write data and decode read data for the array of memory cells in an error correction code in one of a plurality of error correction modes as a function of the temperature of the array of memory cells. Other aspects are described herein.
摘要:
Embodiments of an invention for using physically unclonable function redundant bits are disclosed. In one embodiment, an integrated circuit includes a PUF cell array and redundancy logic. The PUF cell array includes a plurality of redundant cells and is to provide a raw PUF value. The redundancy logic is to generate a redirection list to be used to replace each of one or more bits of the raw PUF value with a redundant bit value from one of the redundant cells.
摘要:
A stacked memory chip device is described. The stacked memory chip device includes a plurality of stacked memory chips. The stacked memory chip device includes read/write logic circuitry to service read/write requests for cache lines kept within the plurality of stacked memory chips. The stacked memory chip device includes data protection circuitry to store information to protect substantive data of cache lines in the plurality of stacked memory chips, where, the information is kept in more than one of the plurality of stacked memory chips, and where, any subset of the information that protects respective substantive information of a particular one of the cache lines is not stored in a same memory chip with the respective substantive information.
摘要:
An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the array at the location targeted by a write operation that will write the first word into the array. The apparatus also includes circuitry to iteratively write to one or more bit locations where a difference exists between the first word and the second word with increasing write current intensity with each successive iteration.