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1.发明授权
公开(公告)号：EP0200082B1
公开(公告)日：1992-07-08
申请号：EP86105142.3
申请日：1986-04-15
IPC分类号： H01L21/90
CPC分类号： H01L21/7688 , H01L21/0271 , H01L21/0272 , H01L21/31133 , H05K3/143 , Y10S438/951
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公开(公告)号：EP0223987A3
公开(公告)日：1989-11-08
申请号：EP86113868.3
申请日：1986-10-07
IPC分类号： H01L21/312
CPC分类号： H01L21/02126 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/3121 , Y10S65/901 , Y10S438/97
摘要： By hydrolyzing an organoalkoysilane monomer at high concentration in solution to form a silanol, allowing the silanol to age to produce a low molecular weight oligomer, spin-applying the oligomer onto a substrate to form a discrete film of highly associated cyclic oligomer thereon, heat treating the oligomer film to form a modified ladder-type silsesquioxane condensation polymer, and then oxidizing the silsesquioxane in an 0₂ RIE, an organoglass is formed which presents novel etch properties. The organoglass can be used as an etch-stop layer in a passivation process.
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3.发明公开
公开(公告)号：EP0200082A3
公开(公告)日：1988-11-17
申请号：EP86105142
申请日：1986-04-15
IPC分类号： H01L21/90
CPC分类号： H01L21/7688 , H01L21/0271 , H01L21/0272 , H01L21/31133 , H05K3/143 , Y10S438/951
摘要： A lift-off metal deposition process in which a high-temperature polyimide layer (16) (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer (14). The two layers (14, 16) are anisotropically etched through a photoresist mask to form via holes in the first polyimide layer (14). After application of a metal layer (20), the high-temperature polyimide layer (16) is lifted off the first polyimide layer (14), which remains as a passivation layer.
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公开(公告)号：EP0223987B1
公开(公告)日：1992-01-15
申请号：EP86113868.3
申请日：1986-10-07
IPC分类号： H01L21/312
CPC分类号： H01L21/02126 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/3121 , Y10S65/901 , Y10S438/97
摘要： By hydrolyzing an organoalkoysilane monomer at high concentration in solution to form a silanol, allowing the silanol to age to produce a low molecular weight oligomer, spin-applying the oligomer onto a substrate to form a discrete film of highly associated cyclic oligomer thereon, heat treating the oligomer film to form a modified ladder-type silsesquioxane condensation polymer, and then oxidizing the silsesquioxane in an O2 RIE, an organoglass is formed which presents novel etch properties. The organoglass can be used as an etch-stop layer in a passivation process.
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5.发明公开
公开(公告)号：EP0223987A2
公开(公告)日：1987-06-03
申请号：EP86113868.3
申请日：1986-10-07
IPC分类号： H01L21/312
CPC分类号： H01L21/02126 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/3121 , Y10S65/901 , Y10S438/97
摘要： By hydrolyzing an organoalkoysilane monomer at high concentration in solution to form a silanol, allowing the silanol to age to produce a low molecular weight oligomer, spin-applying the oligomer onto a substrate to form a discrete film of highly associated cyclic oligomer thereon, heat treating the oligomer film to form a modified ladder-type silsesquioxane condensation polymer, and then oxidizing the silsesquioxane in an 0₂ RIE, an organoglass is formed which presents novel etch properties. The organoglass can be used as an etch-stop layer in a passivation process.
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6.发明公开Barrierless high-temperature Lift-off process for forming a patterned interconnection layer 失效用于形成图案化互连层的无障碍高温剥离工艺
公开(公告)号：EP0200082A2
公开(公告)日：1986-12-10
申请号：EP86105142.3
申请日：1986-04-15
IPC分类号： H01L21/90
摘要： A lift-off metal deposition process in which a high-temperature polyimide layer (16) (i.e. a polyimide having a high imidization temperature) is applied to a first polyimide layer (14). The two layers (14, 16) are anisotropically etched through a photoresist mask to form via holes in the first polyimide layer (14). After application of a metal layer (20), the high-temperature polyimide layer (16) is lifted off the first polyimide layer (14), which remains as a passivation layer.
摘要翻译： 其中将高温聚酰亚胺层（16）（即具有高酰亚胺化温度的聚酰亚胺）施加到第一聚酰亚胺层（14）的剥离金属沉积工艺。 通过光刻胶掩模对两个层（14,16）进行各向异性蚀刻，以在第一聚酰亚胺层（14）中形成通孔。 在施加金属层（20）之后，将高温聚酰亚胺层（16）从第一聚酰亚胺层（14）上抬起，该第一聚酰亚胺层保留为钝化层。
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