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公开(公告)号：EP0740188B1
公开(公告)日：2000-11-29
申请号：EP96105537.3
申请日：1996-04-09
发明人： Colgan, Evan George , Harper, James Mickell Edwin , Kaufman, Frank Benjamin , Manni, Margaret Paggy , Melcher, Robert Lee , Speidell, James Louis
IPC分类号： G02F1/136
CPC分类号： G02F1/136277 , G02F1/133553 , G02F1/13394 , G02F1/136 , G02F1/136209 , G02F2203/12
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2.发明公开
公开(公告)号：EP0709887A3
公开(公告)日：1996-08-14
申请号：EP95115902.9
申请日：1995-10-09
IPC分类号： H01L23/532
CPC分类号： H01L23/53219 , H01L23/5226 , H01L2924/0002 , Y10S438/927 , H01L2924/00
摘要： An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al-Cu and interlayer contact regions or studs of Al₂Cu between patterned interconnect layers. The invention overcomes the problem of electromigration at high current density in the interconnect structure by providing a continuous path for Cu and/or Al atoms to move in the interconnect structure.
摘要翻译： 描述了一种用于阻止电迁移的集成电路芯片的互连结构和方法，其包括图案化互连层之间的Al或Al-Cu的图案化互连层以及Al 2 Cu的层间接触区或柱。 本发明通过提供Cu和/或Al原子在互连结构中移动的连续路径来克服互连结构中在高电流密度下的电迁移问题。
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公开(公告)号：EP0740188A3
公开(公告)日：1997-04-02
申请号：EP96105537.3
申请日：1996-04-09
发明人： Colgan, Evan George , Harper, James Mickell Edwin , Kaufman, Frank Benjamin , Manni, Margaret Paggy , Melcher, Robert Lee , Speidell, James Louis
IPC分类号： G02F1/136
CPC分类号： G02F1/136277 , G02F1/133553 , G02F1/13394 , G02F1/136 , G02F1/136209 , G02F2203/12
摘要： A reflective spatial light modulator array is described incorporating liquid crystal devices, mirrors, a semiconductor substrate, electrical circuits, and a reflector/absorber layer for blocking light. The invention overcomes the problem of shielding light from semiconductor devices, high optical throughput and contrast, pixel storage capacitance to hold the voltage across the liquid crystal device and precise control of the liquid crystal device thickness without spacers obscuring the mirrors.
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4.发明公开Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal 失效薄膜的铝上的难熔金属的多层结构，从而形成氧扩散阻挡
公开(公告)号：EP0725428A3
公开(公告)日：1997-12-10
申请号：EP95120466.8
申请日：1995-12-22
IPC分类号： H01L21/285 , H01L21/3205 , H01L23/485
CPC分类号： H01L21/76858 , H01L21/76841 , H01L23/53223 , H01L28/55 , H01L28/60 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： The use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials.
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5.发明公开
公开(公告)号：EP0740188A2
公开(公告)日：1996-10-30
申请号：EP96105537.3
申请日：1996-04-09
发明人： Colgan, Evan George , Harper, James Mickell Edwin , Kaufman, Frank Benjamin , Manni, Margaret Paggy , Melcher, Robert Lee , Speidell, James Louis
IPC分类号： G02F1/136
CPC分类号： G02F1/136277 , G02F1/133553 , G02F1/13394 , G02F1/136 , G02F1/136209 , G02F2203/12
摘要： A reflective spatial light modulator array is described incorporating liquid crystal devices, mirrors, a semiconductor substrate, electrical circuits, and a reflector/absorber layer for blocking light. The invention overcomes the problem of shielding light from semiconductor devices, high optical throughput and contrast, pixel storage capacitance to hold the voltage across the liquid crystal device and precise control of the liquid crystal device thickness without spacers obscuring the mirrors.
摘要翻译： 描述了一种反射空间光调制器阵列，其结合了液晶器件，反射镜，半导体衬底，电路和用于阻挡光的反射器/吸收层。 本发明克服了屏蔽来自半导体器件的光，高通量和对比度的问题，保持液晶器件两端的电压的像素存储电容以及液晶器件厚度的精确控制，而不会使镜片模糊。
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6.发明公开Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal 失效Dünnfilm-Mehrschichtstruktur aus Aluminum aufrefraktäremMetall，die eine Sauerstoff-Diffusionsperre bildet
公开(公告)号：EP0725428A2
公开(公告)日：1996-08-07
申请号：EP95120466.8
申请日：1995-12-22
IPC分类号： H01L21/285 , H01L21/3205 , H01L23/485
CPC分类号： H01L21/76858 , H01L21/76841 , H01L23/53223 , H01L28/55 , H01L28/60 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： The use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials.
摘要翻译： 在难熔金属层上使用由铝或铝化物组成的双层薄膜结构作为高温氧渗透的扩散阻挡层，用于防止耐火金属的电和机械降解用于诸如电容器电极 用于高介电常数材料。
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公开(公告)号：EP0709887A2
公开(公告)日：1996-05-01
申请号：EP95115902.9
申请日：1995-10-09
IPC分类号： H01L23/532
CPC分类号： H01L23/53219 , H01L23/5226 , H01L2924/0002 , Y10S438/927 , H01L2924/00
摘要： An interconnect structure and method for an integrated circuit chip for resisting electromigration is described incorporating patterned interconnect layers of Al or Al-Cu and interlayer contact regions or studs of Al₂Cu between patterned interconnect layers. The invention overcomes the problem of electromigration at high current density in the interconnect structure by providing a continuous path for Cu and/or Al atoms to move in the interconnect structure.
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