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公开(公告)号:EP0335488B1
公开(公告)日:1993-09-29
申请号:EP89301414.2
申请日:1989-02-15
IPC分类号: G11B5/39
CPC分类号: G11B5/3903
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公开(公告)号:EP0335488A3
公开(公告)日:1991-09-11
申请号:EP89301414.2
申请日:1989-02-15
IPC分类号: G11B5/39
CPC分类号: G11B5/3903
摘要: In a magnetoresistive (MR) read transducer comprising a thin MR film (10) formed of ferromagnetic material and a thin nonmagnetic spacer film layer (14) in contact with the MR film, the spacer film (14) comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide. To make such a transducer, a thin soft magnetic material film is deposited in contact with the spacer film so that a transverse bias is produced in at least a part of the MR film. The resistivity of the spacer film can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer film. In a specific embodiment (Fig. 2) the spacer film (24) extends over only the central region of the MR film (10). Where the MR film consists of a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer film.
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公开(公告)号:EP0335488A2
公开(公告)日:1989-10-04
申请号:EP89301414.2
申请日:1989-02-15
IPC分类号: G11B5/39
CPC分类号: G11B5/3903
摘要: In a magnetoresistive (MR) read transducer comprising a thin MR film (10) formed of ferromagnetic material and a thin nonmagnetic spacer film layer (14) in contact with the MR film, the spacer film (14) comprises a material selected from the group consisting of nichrome and nichrome with chromium oxide.
To make such a transducer, a thin soft magnetic material film is deposited in contact with the spacer film so that a transverse bias is produced in at least a part of the MR film. The resistivity of the spacer film can be chosen by selecting the ratio of nichrome to chromium oxide in the spacer film.
In a specific embodiment (Fig. 2) the spacer film (24) extends over only the central region of the MR film (10). Where the MR film consists of a nickel based alloy, a wet chemical etching process using an etchant comprising an aqueous solution of ceric ammonium nitrate and acetic acid can be used to pattern the spacer film.摘要翻译: 在包括由铁磁材料形成的薄MR膜(10)和与MR膜接触的薄非磁隔离膜层(14)的磁阻(MR)读转换器中,隔离膜(14)包括选自 由镍铬合金和镍铬合金与氧化铬组成。 为了制造这种换能器,沉积薄的软磁材料膜与间隔膜接触,从而在MR膜的至少一部分中产生横向偏压。 间隔膜的电阻率可以通过选择间隔膜中的镍铬合金与氧化铬的比例来选择。 在具体实施例中(图2),隔离膜(24)仅在MR膜(10)的中心区域上延伸。 在MR膜由镍基合金构成的情况下,使用包含硝酸铈铵和乙酸的水溶液的蚀刻剂的湿式化学蚀刻工艺可用于图案化隔离膜。
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