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公开(公告)号：EP0622781A3
公开(公告)日：1996-08-07
申请号：EP94302475.2
申请日：1994-04-07
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3227 , H01L43/10
摘要： A magnetoresistive read sensor incorporates a granular multilayer sensing element comprising a plurality of layers of generally flat particles (31) of a ferromagnetic material embedded in a nonmagnetic electrically conductive material. A bias layer (45) separated from the magnetoresistive sensing element by a spacer layer (43) provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point. The ferromagnetic and the nonmagnetic materials are mutually immiscible, or may be miscible or partially miscible and processed in a manner to control interdiffusion. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic conductive material on a substrate and then annealing the structure. During the annealing cycle, the layers of nonmagnetic material above and below the ferromagnetic layers penetrate at grain boundaries and break the continuity of the ferromagnetic layers to form layers or planes of ferromagnetic particles embedded in a matrix of nonmagnetic material.
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公开(公告)号：EP0660127A3
公开(公告)日：1996-01-17
申请号：EP94119895.4
申请日：1994-12-16
发明人： Coffey, Kevin Robert , Fontana, Robert Edward , Howard, James Kent , Hylton, Todd Lanier , Parker, Michael Andrew , Tsang, Ching Hwa
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01L43/10
摘要： A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material (47,51) and layers of nonmagnetic material (49) on a substrate (41) and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号：EP0660127A2
公开(公告)日：1995-06-28
申请号：EP94119895.4
申请日：1994-12-16
发明人： Coffey, Kevin Robert , Fontana, Robert Edward , Howard, James Kent , Hylton, Todd Lanier , Parker, Michael Andrew , Tsang, Ching Hwa
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01L43/10
摘要： A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material (47,51) and layers of nonmagnetic material (49) on a substrate (41) and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
摘要翻译： 磁阻读取传感器包括由平面阵列中的一个或多个磁阻元件形成的多层感测元件，每个磁阻元件具有由非磁性层分开的至少两个铁磁层的多层结构。 铁磁层通过在铁磁层的相对边缘处的静磁耦合而反铁磁耦合。 通过间隔层与磁阻感测元件分离的偏置层提供磁场以将磁阻感测元件偏置在期望的非信号点用于线性响应。 磁阻感测元件通过在衬底上交替地沉积铁磁材料层和非磁性材料层而形成，然后使用光刻技术对所得结构进行构图以提供磁阻元件的平面阵列。 导电层沉积在阵列上，填充在分离磁阻元件的空间中，以在结构平面内的元件之间提供导电性。
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4.发明公开
公开(公告)号：EP0629998A3
公开(公告)日：1995-01-04
申请号：EP94108770.2
申请日：1994-06-08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/09 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/007 , H01F10/3231 , H01L43/10
摘要： A heterogeneous thin film structure (10) including a discontinuous layer (15) of ferromagnetic material deposited on an insulating substrate (13) and overcoated with a layer (17) of nonmagnetic electrically conductive material exhibits giant magnetoresistance in saturation fields on the order of 350 Oersteds. A layer of ferromagnetic material is deposited on a heated insulating substrate by evaporation techniques to form a layer of isolated ferromagnetic particles and overcoated with a nonmagnetic conductive material to form a plurality of ferromagnetic particles embedded in a nonmagnetic conductive matrix. As the ferromagnetic and nonmagnetic materials are deposited separately, it is not required that the two materials be immiscible and subsequent annealing is not required to induce phase separation.
摘要翻译： 包括沉积在绝缘衬底（13）上并且用非磁性导电材料层（17）覆盖的铁磁材料的不连续层（15）的非均匀薄膜结构（10）在饱和场中表现出巨大的磁阻，大约为350 奥斯特。 通过蒸发技术将一层铁磁材料沉积在加热的绝缘基底上，以形成分离的铁磁粒子层并用非磁性导电材料涂覆以形成嵌入非磁性导电基质中的多个铁磁粒子。 由于铁磁和非磁性材料是分开沉积的，因此不要求两种材料不混溶，并且不需要随后的退火来引起相分离。
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公开(公告)号：EP0413423B1
公开(公告)日：1994-09-07
申请号：EP90306821.1
申请日：1990-06-21
IPC分类号： G11B5/64
CPC分类号： G11B5/656 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/1266 , Y10T428/12931
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公开(公告)号：EP0552890A3
公开(公告)日：1994-02-23
申请号：EP93300239.6
申请日：1993-01-14
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903
摘要： A magnetoresistive (MR) sensor 31 having electrically conductive lead structures 38,41 which are in electrical contact with the MR element 32 at spaced positions. The lead structures comprise a thin film layer of ruthenium, iridium or rhodium to serve as the principal current carrying element. A thin film overlayer or both a thin film underlayer and overlayer may be utilized to provide an adhesion layer for the principal current carrying element. Both the overlayer and underlayer are formed of a material taken from the group consisting of Ti and Ta.
摘要翻译： 具有导电引线结构38,41的磁阻（MR）传感器31，其在间隔位置处与MR元件32电接触。 引线结构包括钌，铱或铑的薄膜层以用作主要电流携带元件。 可以利用薄膜覆盖层或者薄膜底层和覆盖层两者来为主要电流承载元件提供粘附层。 覆盖层和底层都由从Ti和Ta组成的组中取得的材料形成。
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公开(公告)号：EP0243672A3
公开(公告)日：1989-08-23
申请号：EP87104311.3
申请日：1987-03-24
发明人： Howard, James Kent
CPC分类号： G11B5/7325 , G11B5/64 , Y10S428/928 , Y10T428/12597 , Y10T428/12625 , Y10T428/12674 , Y10T428/12743 , Y10T428/1275 , Y10T428/12854 , Y10T428/12861 , Y10T428/12937 , Y10T428/12944
摘要： In a magnetic recording medium for horizontal recording, an underlayer of a body-centred-cubic (BCC) chromium-based alloy with a lattice cell constant greater than chromium (Cr), such as chromium-vanadium (CrV) or chromium-iron (CrFe), is formed between the substrate and a CoPt or CoPtCr magnetic layer.
摘要翻译： 在用于水平记录的磁记录介质中，具有大于铬（Cr）的晶格常数的体心立方（BCC）铬基合金的底层，诸如铬钒（CrV）或铬铁（铬 CrFe）形成在衬底和CoPt或CoPtCr磁性层之间。
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公开(公告)号：EP0314343A2
公开(公告)日：1989-05-03
申请号：EP88309575.4
申请日：1988-10-13
发明人： Howard, James Kent
IPC分类号： G11B5/39
CPC分类号： G11B5/3903
摘要： A magnetoresistive (MR) sensor is provided with longitudinal bias by means of exchange coupling between the ferromagnetic MR layer (NiFe) (18) and an ultrathin layer (20) of an antiferromagnetic material (FeMn) with a thickness within the range of about 2.5 to 20 nm. The exchange structure is capped by a protective film (22) to prevent oxidation damage to the exchange structure during subsequent thermal cycling. The capping layer is a dielectric or metal oxide (cermet) film such as Cr₂ O₃, Al₂ O₃, Cr - Si O or Si O₂. Alternatively, the capping layer can be a laminated FeMn-Lx film where Lx is taken from the group consisting of Cr₂ O₃, Al₂ O₃, and Si O₂.
摘要翻译： 磁阻（MR）传感器通过铁磁MR层（NiFe）（18）和厚度在约2.5的范围内的反铁磁材料（FeMn）的超薄层（20）之间的交换耦合而被提供有纵向偏置 至20nm。 交换结构被保护膜（22）封盖，以防止在随后的热循环期间对交换结构的氧化损伤。 覆盖层是电介质或金属氧化物（金属陶瓷）膜，例如Cr 2 O 3，Al 2 O 3，Cr-Si O或Si O 2。 或者，封盖层可以是层叠的FeMn-Lx膜，其中Lx取自Cr 2 O 3，Al 2 O 3和SiO 2。
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公开(公告)号：EP0243604A2
公开(公告)日：1987-11-04
申请号：EP87102620.9
申请日：1987-02-24
CPC分类号： G11B5/7325 , G11B5/64 , Y10S428/928 , Y10T428/12597 , Y10T428/12625 , Y10T428/12674 , Y10T428/12743 , Y10T428/1275 , Y10T428/12861 , Y10T428/12875 , Y10T428/12937 , Y10T428/12944
摘要： A magnetic recording medium is formed by depositing a layer of a cobalt-platinum magnetic alloy (which may also contain chromium) on a non-magnetic underlayer consisting of tungsten, molybdenum, niobium or vanadium. The magnetic alloy has a higher coercivity than when deposited on a chromium underlayer. The coercivity of the magnetic alloy becomes even higher when the substrate is maintained within such a temperature range during deposition of the magnetic alloy that an intermetallic compound of cobalt and the metal of the underlayer is formed at the interface between the magnetic alloy layer and the underlayer.
摘要翻译： 磁记录介质通过在由钨，钼，铌或钒组成的非磁性底层上沉积一层钴 - 铂磁性合金（其也可以含有铬）而形成。 磁性合金比沉积在铬下层上时具有更高的矫顽力。 当在磁性合金的沉积过程中将衬底保持在这样的温度范围内时，磁性合金的矫顽力变得更高，使得在磁性合金层和底层之间的界面处形成钴和金属底层的金属间化合物 。
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公开(公告)号：EP0082919A2
公开(公告)日：1983-07-06
申请号：EP82107231.1
申请日：1982-08-10
CPC分类号： H01G4/008 , H01G4/08 , Y10T428/12576 , Y10T428/12604 , Y10T428/12611 , Y10T428/12806 , Y10T428/12812 , Y10T428/12819 , Y10T428/12875
摘要： A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a layer (3) of a first metal and a layer (4) of platinum, said first metal being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The first metal is typically selected from Hf, Zr, and Ta. The heat treatment can occur during deposition of the capacitor's dielectric (5, 6), which can have dual layer structure. A counter electrode (7) is provided on top of the dielectric. The thin film capacitor is suitable as decoupling capacitor of VLSI.
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