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23 条记录 (耗时 0.011 秒)

    Films of high Tc oxide superconductors
    2.
    发明公开
    Films of high Tc oxide superconductors 无效
    高Tc氧化物超导体薄膜

    公开(公告)号：EP0662724A3

    公开(公告)日：1995-08-09

    申请号：EP95104274.6

    申请日：1988-03-04

    申请人： International Business Machines Corporation

    发明人： Chaudhari, Praveen Nmn ,  Gambino, Richard Joseph ,  Koch, Roger Hilsen ,  Lacey, James Andrew ,  Laibowitz, Robert Benjamin ,  Viggiano, Joseph Michael

    IPC分类号： H01L39/12 ,  H01L39/24

    CPC分类号： H01L39/2451 ,  H01L39/126 ,  H01L39/2432 ,  Y10S428/93 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/73 ,  Y10S505/732 ,  Y10S505/742

    摘要： Superconducting transition metal oxide films are provided which exhibit very high onsets of superconductivity and superconductivity at temperatures in excess of 40K. These films are produced by vapour deposition processes using pure metal sources for the metals in the superconducting composition, where the metals include multi-valent nonmagnetic transition metals, rare earth elements, and/or rare earth-like alkaline earth elements. The substrate is exposed to oxygen during vapour deposition and, offer formation of the film, ambient followed by at least one annealing step in an oxygen ambient and slow cooling over several hours to room temperature. The substrates chosen are not critical as long as they are not adversely reactive with the superconducting oxide film. Transition metals include Cu, Ni, Ti, and V, while the rare earth-like elements include Y, Ca, Ba, and Sr.

    摘要翻译： 提供超导过渡金属氧化物膜，其在超过40K的温度下表现出超导性和超导性的非常高的起始温度。 这些膜通过使用纯金属源的超导组合物中的金属的气相沉积工艺来生产，其中金属包括多价非磁性过渡金属，稀土元素和/或稀土类碱土元素。 在气相沉积过程中将基材暴露于氧气中，并提供膜的形成，环境，然后在氧气环境中进行至少一次退火步骤，并在数小时内缓慢冷却至室温。 选择的衬底并不重要，只要它们不与超导氧化物膜发生不利反应。 过渡金属包括Cu，Ni，Ti和V，而类稀土元素包括Y，Ca，Ba和Sr.

    Neural network having an associative memory that learns by example
    8.
    发明公开
    Neural network having an associative memory that learns by example 失效
    具有通过实例学习的相关记忆的神经网络

    公开(公告)号：EP0377908A3

    公开(公告)日：1991-03-20

    申请号：EP89124173.9

    申请日：1989-12-30

    申请人： International Business Machines Corporation

    发明人： Hartstein, Allan Mark ,  Koch, Roger Hilsen

    IPC分类号： G06G7/60 ,  G11C15/04 ,  G06F15/80

    CPC分类号： H01L29/7831 ,  G06N3/063 ,  G06N3/0635

    摘要： A neural network utilizing the threshold characteristics of a semiconductor device as the various memory elements of the network. Each memory element comprises a complementary pair of MOSFETs in which the threshold voltage is adjusted as a function of the input voltage to the element. The network is able to learn by example using a local learning algorithm. The network includes a series of output amplifiers in which the output is provided by the sum of the outputs of a series of learning elements coupled to the amplifier. The output of each learning element is the difference between the input signal to each learning element and an individual learning threshold at each input. The learning is accomplished by charge trapping in the insulator of each individual input MOSFET pair. The thresholds of each transistor automatically adjust to both the input and output voltages to learn the desired state. After input patterns have been learned by the network, the learning function is set to zero so that the thresholds remain constant and the network will come to an equilibrium state under the influence of a test input pattern thereby providing, as an output, the learned pattern most closely resembling the test input pattern.