公开(公告)号：EP0241718B1

公开(公告)日：1992-05-20

申请号：EP87103635.6

申请日：1987-03-13

申请人： International Business Machines Corporation

发明人： Egitto, Frank Daniel ,  Emmi, Francis ,  Mlynko, Walter Eugene ,  Susko, Robin Anne

IPC分类号： H05K3/42

CPC分类号： H05K3/0055 ,  H05K2203/095

公开(公告)号：EP0241718A3

公开(公告)日：1989-10-18

申请号：EP87103635.6

申请日：1987-03-13

申请人： International Business Machines Corporation

发明人： Egitto, Frank Daniel ,  Emmi, Francis ,  Mlynko, Walter Eugene ,  Susko, Robin Anne

IPC分类号： H05K3/42

CPC分类号： H05K3/0055 ,  H05K2203/095

摘要： Contaminant is removed from holes by etching in a gaseous plasma by first removing contaminant from the vicinity of the edges of the hole. Next, a mask is provided in the vicinity of the edges to prevent etching by contacting with a gaseous plasma which is different from the gaseous plasma employed in the first etching step. The holes are then etched in a gaseous plasma to remove contaminant from the interior of the holes in the vicinity of the center of the holes, whereby the mask protects the edges from being etched.

公开(公告)号：EP0279188A2

公开(公告)日：1988-08-24

申请号：EP88100676.1

申请日：1988-01-19

申请人： International Business Machines Corporation

发明人： Egitto, Frank Daniel ,  Mlynko, Walter Eugene

IPC分类号： H01L21/31

CPC分类号： H01L21/31138 ,  H05K3/0017

摘要： Increased etching rates are obtained by plasma etching wherein the power is applied in a cyclical or oscillating mode.

摘要翻译： 通过等离子体蚀刻获得增加的蚀刻速率，其中功率以循环或振荡模式施加。

公开(公告)号：EP0199966A1

公开(公告)日：1986-12-10

申请号：EP86103744.8

申请日：1986-03-19

申请人： International Business Machines Corporation

发明人： Babu, Suryadevara Vijayakumar ,  Hoffarth, Joseph Gerard ,  Knoll, Allan Robert ,  Mlynko, Walter Eugene ,  Rembetski, John Francis

IPC分类号： C23F1/12 ,  C23C4/04 ,  B44C1/22

摘要： A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value.

摘要翻译： 公开了等离子体蚀刻工艺，其中待蚀刻的衬底首先暴露于含有挥发性有机卤化物的蚀刻剂气体。 当蚀刻速率稳定时，蚀刻剂气体中的有机卤化物被氧置换，由此衬底的蚀刻速率立即增加到相当高的值。

公开(公告)号：EP0199966B1

公开(公告)日：1990-12-12

申请号：EP86103744.8

申请日：1986-03-19

申请人： International Business Machines Corporation

发明人： Babu, Suryadevara Vijayakumar ,  Hoffarth, Joseph Gerard ,  Knoll, Allan Robert ,  Mlynko, Walter Eugene ,  Rembetski, John Francis

IPC分类号： C23F1/12 ,  C23C4/04 ,  B44C1/22

CPC分类号： C09K13/00 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116

公开(公告)号：EP0279188A3

公开(公告)日：1988-12-21

申请号：EP88100676

申请日：1988-01-19

申请人： International Business Machines Corporation

发明人： Egitto, Frank Daniel ,  Mlynko, Walter Eugene

IPC分类号： H01L21/31

CPC分类号： H01L21/31138 ,  H05K3/0017

摘要： Increased etching rates are obtained by plasma etching wherein the power is applied in a cyclical or oscillating mode.

公开(公告)号：EP0279188B1

公开(公告)日：1993-03-24

申请号：EP88100676.1

申请日：1988-01-19

申请人： International Business Machines Corporation

发明人： Egitto, Frank Daniel ,  Mlynko, Walter Eugene

IPC分类号： H01L21/31

CPC分类号： H01L21/31138 ,  H05K3/0017

公开(公告)号：EP0241718A2

公开(公告)日：1987-10-21

申请号：EP87103635.6

申请日：1987-03-13

申请人： International Business Machines Corporation

发明人： Egitto, Frank Daniel ,  Emmi, Francis ,  Mlynko, Walter Eugene ,  Susko, Robin Anne

IPC分类号： H05K3/42

CPC分类号： H05K3/0055 ,  H05K2203/095

摘要： Contaminant is removed from holes by etching in a gaseous plasma by first removing contaminant from the vicinity of the edges of the hole. Next, a mask is provided in the vicinity of the edges to prevent etching by contacting with a gaseous plasma which is different from the gaseous plasma employed in the first etching step. The holes are then etched in a gaseous plasma to remove contaminant from the interior of the holes in the vicinity of the center of the holes, whereby the mask protects the edges from being etched.

摘要翻译： 通过首先从孔的边缘附近去除污染物，通过在气态等离子体中蚀刻从孔中除去污染物。 接下来，在边缘附近设置掩模，以防止与与第一蚀刻步骤中使用的气体等离子体不同的气体等离子体接触而进行蚀刻。 然后在气体等离子体中蚀刻孔，以从孔的中心附近的孔的内部去除污染物，由此掩模保护边缘不被蚀刻。