Plasma reactor chamber
    6.
    发明公开
    Plasma reactor chamber 失效
    等离子体反应器室

    公开(公告)号:EP0188208A3

    公开(公告)日:1987-09-30

    申请号:EP86100109

    申请日:1986-01-07

    摘要: A system for continuous plasma processing of the major surfaces of a plurality of substrates (122A,122B,122C). The system comprises a plasma reactor chamber (115), provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision (116,118) for applying such electric fields to the substrates, provision for continuously exhausting gas, an automatic transport (123) or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock (114,120) connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.

    Method for cleaning a workpiece after machining with a cutting instrument
    7.
    发明公开
    Method for cleaning a workpiece after machining with a cutting instrument 失效
    一种用于与切割器械加工后的清洗工件的方法。

    公开(公告)号:EP0205040A2

    公开(公告)日:1986-12-17

    申请号:EP86107258.5

    申请日:1986-05-28

    IPC分类号: H05K13/00 H05K3/26

    摘要: @ The method for cleaning the cuts (24) machined into a workpiece (22) such as a printed electric circuit board, includes the steps of coating the cutting instrument (36) such as a drill bit, with a liquid tracer prior to the cutting operation. During the cutting operation, the liquid tracer becomes mixed with material such as an electrically insulating binder layer (50) disposed, e.g. between opposed metal plates (46,48) of the workpiece (22). Any smear (52) of the insulating layer (50) upon exposed metal surfaces of the cut (24) contains elements of chemical compounds used in thetracer. After extraction of the cutting instrument (36) from the workpiece (22), the latter is placed in a plasma reactor (26) wherein the metal surfaces are etched to remove any smears and debris (52) of the insulation material found on the exposed metal surfaces. The tracer elements, such as deuterium and phosphorus are monitored in the effluent plasma of the reactor (26) to determine when the cleaning of the cuts (24) intheworkpiece (22) is completed.

    摘要翻译: 用于清洗(24)机加工到工件(22)的切口的方法:诸如印刷电路板,包括涂覆所述切割器械(36)的步骤:例如一个钻头,与液体示踪剂切割操作之前 , 在切割操作中,液体示踪剂变得与材料混合:如在电绝缘粘结剂层(50),其设置,E.G. 工件(22)的金属板(46,48)之间的反对。 在所述切口(24)的暴露的金属表面的绝缘层(50)的任何拖影(52)包含在用于示踪化学化合物的元素。 从工件(22)的切割器械(36)的提取后,后者是在等离子体反应器(26)worin金属表面进行蚀刻,以除去在暴露的发现绝缘材料的任何涂片和碎屑(52)放置 金属表面。 示踪元素,颜色:例如氘和磷在等离子体反应器(26),以确定的矿井的流出物进行监测。当完成在所述工件(22)的切口(24)的清洗。

    Plasma reactor chamber
    8.
    发明公开
    Plasma reactor chamber 失效
    KammerfürPlasma-Behandlung。

    公开(公告)号:EP0188208A2

    公开(公告)日:1986-07-23

    申请号:EP86100109.7

    申请日:1986-01-07

    摘要: A system for continuous plasma processing of the major surfaces of a plurality of substrates (122A,122B,122C). The system comprises a plasma reactor chamber (115), provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision (116,118) for applying such electric fields to the substrates, provision for continuously exhausting gas, an automatic transport (123) or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock (114,120) connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.

    摘要翻译: 一种用于连续等离子体处理多个基板(122A,122B,122C)的主表面的系统。 该系统包括等离子体反应室(115),用于通过电场连续地引入要转化为反应物质的气体的装置(116,118),用于向基板施加这种电场,提供连续排出气体,自动 输送(123)或驱动机构,其连接到所述室和基板,以促进沿着所述室中的预定路径顺序地推进基板;以及真空锁(114,120),其连接到所述室,用于在所述室中保持基本上恒定的气氛 同时将每个基板插入和移出该腔室。