摘要:
A method for improving the adhesion of a polymer such as an epoxy resin to an electrolytic copper surface wherein the copper surface to be adhered is exposed to gas plasma containing a fluorohydrocarbon.
摘要:
A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value.
摘要:
A system for continuous plasma processing of the major surfaces of a plurality of substrates (122A,122B,122C). The system comprises a plasma reactor chamber (115), provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision (116,118) for applying such electric fields to the substrates, provision for continuously exhausting gas, an automatic transport (123) or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock (114,120) connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.
摘要:
@ The method for cleaning the cuts (24) machined into a workpiece (22) such as a printed electric circuit board, includes the steps of coating the cutting instrument (36) such as a drill bit, with a liquid tracer prior to the cutting operation. During the cutting operation, the liquid tracer becomes mixed with material such as an electrically insulating binder layer (50) disposed, e.g. between opposed metal plates (46,48) of the workpiece (22). Any smear (52) of the insulating layer (50) upon exposed metal surfaces of the cut (24) contains elements of chemical compounds used in thetracer. After extraction of the cutting instrument (36) from the workpiece (22), the latter is placed in a plasma reactor (26) wherein the metal surfaces are etched to remove any smears and debris (52) of the insulation material found on the exposed metal surfaces. The tracer elements, such as deuterium and phosphorus are monitored in the effluent plasma of the reactor (26) to determine when the cleaning of the cuts (24) intheworkpiece (22) is completed.
摘要:
A system for continuous plasma processing of the major surfaces of a plurality of substrates (122A,122B,122C). The system comprises a plasma reactor chamber (115), provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision (116,118) for applying such electric fields to the substrates, provision for continuously exhausting gas, an automatic transport (123) or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock (114,120) connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.