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58 条记录 (耗时 0.017 秒)

    Optical interconnection apparatus
    2.
    发明公开
    Optical interconnection apparatus 失效
    Anordnung zur optischen Verbindung。

    公开(公告)号：EP0675580A3

    公开(公告)日：1996-02-21

    申请号：EP95201777.0

    申请日：1990-09-07

    申请人： AT&T Corp.

    发明人： Berthold, Kurt ,  Nordin, Ronald A. ,  Levi, Anthony Fredric John ,  Nottenburg, Richard N.

    IPC分类号： H01S3/103 ,  H01S3/19 ,  H04B10/14 ,  H01S3/085 ,  H01S3/101 ,  H01S3/106

    CPC分类号： B82Y20/00 ,  G02F3/00 ,  H01S3/1061 ,  H01S5/0265 ,  H01S5/0601 ,  H01S5/0624 ,  H01S5/06243 ,  H01S5/0625 ,  H01S5/187 ,  H01S5/34 ,  H01S5/3418 ,  H01S5/50

    摘要： Disclosed is apparatus, exemplarily an electronic switching machine, that comprises novel and advantageous optical interconnection means. In particular, the apparatus comprises one or more digital electronic gates, and the output of the gate or gates is applied, without intervening amplification, to a semiconductor laser whose radiation output is responsive to the applied electrical signal. The laser exemplarily is a quantum well laser comprising at least one gain section and at least one loss section. The electrical output of the gate or gates is connected to the at least one loss section. Due to the ability of such lasers to be switched by means of a relatively very small current through the loss section, conventionally used drive amplifiers are not required in apparatus according to the invention, resulting in significantly reduced complexity and cost.

    摘要翻译： 本发明的空腔长度LC的量子阱光电器件除了“增益”部分（20）之外还包括光学耦合到增益部分（20）但与其基本上隔离的“损耗”部分（21） 。 通过改变损耗部分（21）上的电气偏压，可以改变空腔的模态增益。 根据本发明的装置在各种应用中是有用的。 示例性地，通过使（在本发明的激光器中）LC / LA大于约20（LA是损耗部分的长度）并且使增益部分（20）和损耗部分（21）之间的电隔离大于约3k OMEGA，激光辐射的快速幅度调制是可能的。 通过将适当的AR涂层施加到本发明装置的空腔中，可以制造快速可变增益光放大器。 最后，本发明的激光器可以在两个宽间隔的波长之间电连接，波长差为至少10nm。 这使得可以在诸如信息存储系统，信息处理系统和通信系统的装置中使用本发明的装置。 还公开了操作这种装置的方法。

    A semiconductor laser device
    5.
    发明公开
    A semiconductor laser device 失效
    半导体激光装置

    公开(公告)号：EP0603164A2

    公开(公告)日：1994-06-22

    申请号：EP94200223.9

    申请日：1991-04-17

    申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

    发明人： Shigihara, Kimio, c/o Mitsubishi Denki K.K. ,  Nagai, Yutaka, c/o Mitsubishi Denki K.K. ,  Aoyagi, Toshitaka, c/o Mitsubishi Denki K.K.

    IPC分类号： H01S3/19 ,  H01S3/025 ,  H01S3/105 ,  H01S3/085

    CPC分类号： B82Y20/00 ,  H01S3/105 ,  H01S3/107 ,  H01S5/028 ,  H01S5/0285 ,  H01S5/0622 ,  H01S5/14 ,  H01S5/34 ,  H01S5/3418

    摘要： A semiconductor laser device includes a semiconductor laser element having an active layer comprising a quantum well structure or a multi-quantum well structure which allows n levels of quantum states (n ≧ 2) from the first quantum level to the n-th quantum level, in which the front facet reflectivity and the rear facet reflectivity are made asymmetric or low so that an oscillation occurs at the n-th quantum level, a reflecting mirror having a reflectivity which enables that an oscillation of the semiconductor element occurs at a quantum level lower than the n-th quantum level, and a reflecting mirror moving means for varying the oscillation wavelength of the semiconductor laser element by arranging the reflecting mirror in the neighborhood of the front facet or rear facet of the semiconductor laser element. Therefore, a semiconductor laser device which oscillates at desired light outputs at two or more wavelengths by quite a simple construction can be obtained.

    摘要翻译： 本发明提供一种半导体激光装置，其具有：具有由量子阱结构或多量子阱结构构成的活性层的半导体激光元件，该量子阱结构允许从第一量子能级到第n量子能级的n个量子态（n≥2） 其中前端面反射率和后端面反射率被制成非对称或低的，从而在第n量子能级处发生振荡，具有反射率的反射镜使得半导体元件的振荡能够以低量子级 以及反射镜移动装置，用于通过将反射镜布置在半导体激光器元件的前端面或后端面附近来改变半导体激光器元件的振荡波长。 因此，可以以非常简单的结构获得以所需光输出以两种或多种波长振荡的半导体激光器件。

    Optoelectronic devices
    7.
    发明公开
    Optoelectronic devices 失效
    Optoelektronische Vorrichtungen。

    公开(公告)号：EP0433542A2

    公开(公告)日：1991-06-26

    申请号：EP90114315.6

    申请日：1990-07-26

    申请人： International Business Machines Corporation

    发明人： Esaki, Leo ,  Ohno, Hideo ,  Mendez, Emilio Eugenio

    IPC分类号： H01L33/00 ,  H01L31/0352 ,  H01S3/19

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L31/0352 ,  H01S5/06203 ,  H01S5/06206 ,  H01S5/34 ,  H01S5/3402 ,  H01S5/3418 ,  H01S5/3419 ,  H01S5/3422 ,  H01S5/34306

    摘要： The present invention is directed to novel optoelectronic devices, such as light emitters and detectors, that have a unique combination of semiconductor materials that provides a band arrangement resulting in improved efficiency of carrier injection. The devices are quantum well type devices in which discrete electronic states are formed by size quantization effects in the quantum well region. Electromagnetic radiation of emission and absorption occurs by the transition of electrons from a first energy state to a second energy state in either the conduction band or the valence band of the quantum well layer (12). The bands edges of the layers are offset such that under an appropriate bias, the discrete energy states reside in the bandgap of one of the electrodes (14) and in an allowed region of the other electrode (16), with one state residing in the conduction band of one electrode and the other state residing in the valence band of the other electrode. The wavelength of the emitted or detected light is inversely proportional to the energy difference between the first and second states. Wavelength customization is facilitated by techniques for adjusting the energy difference.

    摘要翻译： 本发明涉及新型光电器件，例如发光体和检测器，其具有提供带状布置的半导体材料的独特组合，从而提高载流子注入的效率。 这些器件是量子阱型器件，其中通过量子阱区域中的尺寸量化效应形成分立的电子状态。 发射和吸收的电磁辐射通过电子从量子阱层（12）的导带或价带中的第一能态转变为第二能态而发生。 这些层的带边缘被偏移，使得在适当的偏压下，离散能态驻留在电极（14）之一和另一电极（16）的允许区域的带隙中，一个状态驻留在 一个电极的导带和另一个电极的价带中的另一个状态。 发射或检测到的光的波长与第一和第二状态之间的能量差成反比。 通过调整能量差异的技术来促进波长定制。

    Semiconductor laser element selectively emitting lights of different wavelengths
    8.
    发明公开
    Semiconductor laser element selectively emitting lights of different wavelengths 失效
    半导体激光器具有不同波长的选择性地发光。

    公开(公告)号：EP0390200A2

    公开(公告)日：1990-10-03

    申请号：EP90106172.1

    申请日：1990-03-30

    申请人： CANON KABUSHIKI KAISHA

    发明人： Ikeda, Sotomitsu

    IPC分类号： H01S3/19 ,  H01S3/103 ,  H01S3/25 ,  G02F2/02

    CPC分类号： B82Y20/00 ,  H01S5/06255 ,  H01S5/22 ,  H01S5/34 ,  H01S5/3418

    摘要： A semiconductor laser element selectively emitting lights differing in corresponding quantized energy from each other comprises a substrate (1), a laser resonator provided on the substrate (1) and having end surfaces opposed to each other, the resonator comprising semiconductor layers including an active layer (4) of quantum well structure and laminated on the substrate (1), and a plurality of electrodes (7₁, 7₂) juxtaposed in the direction of resonance of the resonator, the electrodes independently pouring an electric current into the active layer (4), the end surface loss of the resonator being set so that a light corresponding to greater quantized energy may be oscillated when electric currents are poured at equal densities from the plurality of electrodes (7₁, 7₂) into the active layer and that a light corresponding to smaller quantized energy may be oscillated when electric currents are poured at different densities from the plurality of electrodes (7₁, 7₂) into the active layer (4).

    摘要翻译： 选择性地发射灯在从海誓山盟对应的量化能量不同的半导体激光元件包括基底（1），设置在所述基板（1）和相对的海誓山盟具有端表面，所述谐振器，包括半导体层，其包括有源层上的激光谐振器 （4）量子阱结构构成且层叠于在谐振器的谐振方向的方向排列在基板（1），并且电极（71，72）的复数，所述电极unabhängig浇注电流到有源层（4） 时，谐振器的端面损耗被设置成没有光对应于更大的量化能量可以被振荡时的电流就以相等的密度倾倒从电极（71，72）的多元性到有源层，做了光对应于 较小的量化能量可以被振荡时的电流就以不同的密度倾倒从电极（71，72）（的多元性到有源层 4）。