公开(公告)号：EP0331598A3

公开(公告)日：1991-04-10

申请号：EP89480001.0

申请日：1989-01-03

申请人： International Business Machines Corporation

发明人： Magdo, Ingrid Emese ,  Ormond, Douglas William, Jr.

IPC分类号： H01L21/48 ,  H01L21/768

CPC分类号： H01L21/4846 ,  H05K3/062 ,  H05K3/108 ,  H05K3/143 ,  H05K3/4629 ,  Y10S438/951

摘要： A method for selectively depositing a plurality of metal layers on a substrate. The method includes the steps of depositing at least one layer of blanket metal (16) on a surface (10) of a substrate, building a lift-off stencil over the blanket metal, depositing at least one layer of redundant metal (24) over the lift-off stencil, depositing a first etch-resistant barrier (26) over the redundant metal, removing the lift-off stencil and the overlying layers of redundant metal and the etch-resistant barrier, depositing a second etch-resistant barrier (28) over the blanket metal and the first etch-resistant barri­er, and then reactive ion etching (RIE) the second etch-­resistant barrier so as to expose the blanket metal (16) and at least partially remove the second etch-resistant barrier from the first etch-resistant barrier. A final step of the method includes etching the blanket metal (24). Also disclosed is a metallurgical structure for a packaging substrate. The metallurgical structure includes layers of blanket metal and redundant metal. The redun­dant metal has an electrically isolating coating on its sides but not on its top surface, thereby facilitating the electrical contact of the redundant metal with the electri­cal component.

公开(公告)号：EP0331598A2

公开(公告)日：1989-09-06

申请号：EP89480001.0

申请日：1989-01-03

申请人： International Business Machines Corporation

发明人： Magdo, Ingrid Emese ,  Ormond, Douglas William, Jr.

IPC分类号： H01L21/48 ,  H01L21/768

CPC分类号： H01L21/4846 ,  H05K3/062 ,  H05K3/108 ,  H05K3/143 ,  H05K3/4629 ,  Y10S438/951

摘要： A method for selectively depositing a plurality of metal layers on a substrate. The method includes the steps of depositing at least one layer of blanket metal (16) on a surface (10) of a substrate, building a lift-off stencil over the blanket metal, depositing at least one layer of redundant metal (24) over the lift-off stencil, depositing a first etch-resistant barrier (26) over the redundant metal, removing the lift-off stencil and the overlying layers of redundant metal and the etch-resistant barrier, depositing a second etch-resistant barrier (28) over the blanket metal and the first etch-resistant barri­er, and then reactive ion etching (RIE) the second etch-­resistant barrier so as to expose the blanket metal (16) and at least partially remove the second etch-resistant barrier from the first etch-resistant barrier. A final step of the method includes etching the blanket metal (24). Also disclosed is a metallurgical structure for a packaging substrate. The metallurgical structure includes layers of blanket metal and redundant metal. The redun­dant metal has an electrically isolating coating on its sides but not on its top surface, thereby facilitating the electrical contact of the redundant metal with the electri­cal component.

摘要翻译： 一种用于在衬底上选择性地沉积多个金属层的方法。 该方法包括以下步骤：在衬底的表面（10）上沉积至少一层橡皮布金属（16），在橡皮布金属上建立剥离模板，将至少一层冗余金属（24）沉积在 剥离模板，在冗余金属上沉积第一耐蚀刻屏障（26），去除剥离模板和上覆层的冗余金属和抗蚀刻屏障，沉积第二耐蚀刻屏障（28 ），并且然后反应离子蚀刻（RIE）第二耐蚀刻屏障，以便暴露橡皮布金属（16），并且至少部分地将第二耐蚀刻屏障从 第一耐腐蚀屏障。 该方法的最后步骤包括蚀刻覆盖金属（24）。 还公开了一种用于封装衬底的冶金结构。 冶金结构包括橡皮布金属和冗余金属层。 冗余金属在其侧面上具有电绝缘涂层，但不在其顶表面上，从而有助于冗余金属与电气部件的电接触。