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公开(公告)号:EP0048814A2
公开(公告)日:1982-04-07
申请号:EP81106437.7
申请日:1981-08-19
IPC分类号: G11C11/00
CPC分类号: H01L29/7882 , G11C14/00 , H01L27/115
摘要: This invention provides improved non-volatile semiconductor memories which include a volatile circuit (10) coupled to a non-volatile device (22) having a floating gate (28) and first and second control gates (34, 36 & 38, 40) capacitively coupled to the floating gate (28) with a charge injector structure (40) disposed between the floating gate and one of the two control gates. The volatile circuit may be a dynamic one-device cell such as a conventional flip-flop or latch cell.
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公开(公告)号:EP0096225A3
公开(公告)日:1985-03-20
申请号:EP83104486
申请日:1983-05-06
IPC分类号: H03K19/177 , G06F07/50
CPC分类号: G06F7/5057 , H03K19/096 , H03K19/1772
摘要: A programmable PLA circuit in which an interlaced AND/OR array (30, 32, 34) is provided which has both common input (16) and common output lines (36). Separate AND and OR functions are generated during two different timing intervals (D1, D2) such that both of the logical arrays can physically share input and output circuit elements. A binary adder is described in which pairs of array output lines are applied to the same Exclusive-NOR circuits (40) during the two time intervals to provide the Exclusive-NOR of product terms during the AND array time interval (D1) and to provide the Exclusive-NOR of sums of product terms or the sum of the Exclusive-NOR of product terms during the second time interval (D2).
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公开(公告)号:EP0096225A2
公开(公告)日:1983-12-21
申请号:EP83104486.2
申请日:1983-05-06
IPC分类号: H03K19/177 , G06F7/50
CPC分类号: G06F7/5057 , H03K19/096 , H03K19/1772
摘要: A programmable PLA circuit in which an interlaced AND/OR array (30, 32, 34) is provided which has both common input (16) and common output lines (36). Separate AND and OR functions are generated during two different timing intervals (D1, D2) such that both of the logical arrays can physically share input and output circuit elements. A binary adder is described in which pairs of array output lines are applied to the same Exclusive-NOR circuits (40) during the two time intervals to provide the Exclusive-NOR of product terms during the AND array time interval (D1) and to provide the Exclusive-NOR of sums of product terms or the sum of the Exclusive-NOR of product terms during the second time interval (D2).
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公开(公告)号:EP0048814A3
公开(公告)日:1983-08-17
申请号:EP81106437
申请日:1981-08-19
IPC分类号: G11C11/00
CPC分类号: H01L29/7882 , G11C14/00 , H01L27/115
摘要: This invention provides improved non-volatile semiconductor memories which include a volatile circuit (10) coupled to a non-volatile device (22) having a floating gate (28) and first and second control gates (34, 36 & 38, 40) capacitively coupled to the floating gate (28) with a charge injector structure (40) disposed between the floating gate and one of the two control gates. The volatile circuit may be a dynamic one-device cell such as a conventional flip-flop or latch cell.
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公开(公告)号:EP0096225B1
公开(公告)日:1988-08-10
申请号:EP83104486.2
申请日:1983-05-06
IPC分类号: H03K19/177 , G06F7/50
CPC分类号: G06F7/5057 , H03K19/096 , H03K19/1772
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公开(公告)号:EP0048814B1
公开(公告)日:1988-03-30
申请号:EP81106437.7
申请日:1981-08-19
IPC分类号: G11C11/00
CPC分类号: H01L29/7882 , G11C14/00 , H01L27/115
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