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1.发明授权Method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate 失效在硅半导体基板的表面形成宽深度电介质填充隔离层的方法
公开(公告)号：EP0084635B1
公开(公告)日：1989-09-27
申请号：EP82111305.7
申请日：1982-12-07
IPC分类号： H01L21/76
CPC分类号： H01L21/76229 , H01L21/31055 , H01L21/31116
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2.发明公开Method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate 失效在硅半导体基板的表面形成宽深度电介质填充隔离层的方法
公开(公告)号：EP0084635A3
公开(公告)日：1986-08-27
申请号：EP82111305
申请日：1982-12-07
IPC分类号： H01L21/76
CPC分类号： H01L21/76229 , H01L21/31055 , H01L21/31116
摘要： A method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate by forming a wide plug of chemical vapor deposited silicon dioxide in the trench, filling the remaining unfilled trench portions by chemical vapor depositing a layer of silicon dioxide over the substrate and etching back this layer. The method produces chemically pure, planar wide deep dielectric filled isolation trenches and may also be used to simultaneously produce narrow deep dielectric filled isolation trenches.
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3.发明公开Method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate 失效一种制备宽而深的坑在由硅制成的半导体衬底的表面填充有电介质的方法。
公开(公告)号：EP0084635A2
公开(公告)日：1983-08-03
申请号：EP82111305.7
申请日：1982-12-07
IPC分类号： H01L21/76
CPC分类号： H01L21/76229 , H01L21/31055 , H01L21/31116
摘要： A method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate by forming a wide plug of chemical vapor deposited silicon dioxide in the trench, filling the remaining unfilled trench portions by chemical vapor depositing a layer of silicon dioxide over the substrate and etching back this layer. The method produces chemically pure, planar wide deep dielectric filled isolation trenches and may also be used to simultaneously produce narrow deep dielectric filled isolation trenches.
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