专利检索 ap:("International Business Machines Corporation") AND inv:"FRANK, Martin M. c/o IBM United Kingdom Limited," 第 1 页

1.

发明授权
Semiconductor structure comprising a HfSiN metal gate and method of forming the same 有权
标题翻译：具有金属栅极HfSiN和制造工艺的半导体结构

公开(公告)号：EP1836732B1

公开(公告)日：2011-09-28

申请号：EP05826298.1

申请日：2005-12-02

申请人： International Business Machines Corporation

发明人： CALLEGARI, Alessandro C. , FRANK, Martin M. c/o IBM United Kingdom Limited, , JAMMY, Rajarao , LACEY, Dianne L. , MCFEELY, Fenton R. , ZAFAR, Sufi

IPC分类号： H01L27/088 , H01L21/28 , H01L29/49

CPC分类号： H01L29/4966 , H01L21/28088 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/6659

摘要： A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000°C), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 Å classical), which cannot be achieved using TaSiN.