公开(公告)号：EP2283513A1

公开(公告)日：2011-02-16

申请号：EP08823312.7

申请日：2008-09-23

申请人： International Business Machines Corporation

发明人： YANG, Chih-chao ,  GIGNAC, Lynne M.

IPC分类号： H01L21/02 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure including a highly reliable high aspect ratio contact structure in which key-hole seam formation is eliminated is provided. The key-hole seam formation is eliminated in the present invention by providing a densified noble metal-containing liner within a high aspect ratio contact opening that is present in a dielectric material. The densified noble metal-containing liner is located atop a diffusion barrier and both those elements separate the conductive material of the inventive contact structure from a conductive material of an underlying semiconductor structure. The densified noble metal-containing liner of the present invention is formed by deposition of a noble metal-containing material having a first resistivity and subjecting the deposited noble metal-containing material to a densification treatment process (either thermal or plasma) that decreases the resistivity of the deposited noble metal-containing material to a lower resistivity.