公开(公告)号：EP1946355B1

公开(公告)日：2010-11-03

申请号：EP06778031.2

申请日：2006-07-27

申请人： International Business Machines Corporation

发明人： HICHRI, Habib ,  LARSEN, Kimberly ,  MAYNARD, Helen c/o IBM U.K. Limited I.P.L. ,  PETRARCA, Kevin

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01F17/00 ,  H01F41/04 ,  H01F41/10

CPC分类号： H01L21/02118 ,  H01F41/041 ,  H01L21/02282 ,  H01L21/3083 ,  H01L21/312 ,  H01L21/76816 ,  H01L23/522 ,  H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention forms integrated circuit devices of similar structure and dissimilar depth, such as interconnects and inductors, simultaneously. The invention deposits a conformal polymer over an area on a substrate with vias and an area without vias. Simultaneously, cavities are formed in the areas with and without vias. The depth of the cavities formed in the areas with vias will extend deeper into the substrate than the cavities formed in areas without vias. Such occurs because the polymer deposits unevenly along the surface of the substrate and more specifically, more thinly in areas with underlying depressions. Once filled with a conductive material, cavities which extend more deeply into the substrate, which were formed in areas with vias, become inductors, and the cavities which extend less deeply into the substrate, which were formed in areas without vias, become interconnects.

公开(公告)号：EP1946355A1

公开(公告)日：2008-07-23

申请号：EP06778031.2

申请日：2006-07-27

申请人： International Business Machines Corporation

发明人： HICHRI, Habib ,  LARSEN, Kimberly ,  MAYNARD, Helen c/o IBM U.K. Limited I.P.L. ,  PETRARCA, Kevin

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01F17/00

CPC分类号： H01L21/02118 ,  H01F41/041 ,  H01L21/02282 ,  H01L21/3083 ,  H01L21/312 ,  H01L21/76816 ,  H01L23/522 ,  H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention forms integrated circuit devices of similar structure and dissimilar depth, such as interconnects and inductors, simultaneously. The invention deposits a conformal polymer over an area on a substrate with vias and an area without vias. Simultaneously, cavities are formed in the areas with and without vias. The depth of the cavities formed in the areas with vias will extend deeper into the substrate than the cavities formed in areas without vias. Such occurs because the polymer deposits unevenly along the surface of the substrate and more specifically, more thinly in areas with underlying depressions. Once filled with a conductive material, cavities which extend more deeply into the substrate, which were formed in areas with vias, become inductors, and the cavities which extend less deeply into the substrate, which were formed in areas without vias, become interconnects.